1. Thickness-modulated optical dielectric constants and band alignments of HfOxNy gate dielectrics.
- Author
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He, G., Zhang, L. D., Liu, M., Zhang, J. P., Wang, X. J., and Zhen, C. M.
- Subjects
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DIELECTRICS , *THIN films , *SPUTTERING (Physics) , *SPECTRUM analysis , *ELLIPSOMETRY , *SURFACES (Technology) , *X-ray photoelectron spectroscopy - Abstract
Thickness-modulated optical dielectric constants and band alignments of HfOxNy films grown by sputtering have been investigated by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy. Based on SE measurements, it has been noted that an increase in optical dielectric constant and band gap has been observed as a function of the film thickness. Analyses of thickness-dependent band alignment of the HfOxNy/Si system indicate that the valence band offset increases, but only slight change in the conduction band offset, resulting from the thickness-induced change in the structure. The suitable optical dielectric constants and band offsets relative to Si make sputtering-derived HfOxNy film a promising candidate for high-k gate dielectrics. [ABSTRACT FROM AUTHOR]
- Published
- 2009
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