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The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics.
- Source :
-
Applied Physics Letters . 3/24/2008, Vol. 92 Issue 12, p122901. 3p. 1 Chart, 4 Graphs. - Publication Year :
- 2008
-
Abstract
- The effect of N concentration on the band gap and band offsets of HfOxNy films has been systematically investigated. It was found that the band gap as well as the band offsets of HfOxNy films decreased with the increase of N concentration. When the N concentration reached 16.3%, the conduction band offset (ΔEc) reduced to be 0.88 eV, which is smaller than the minimal requirement of ΔEc values for high-k dielectrics and, thus, leads to unacceptably high leakage currents. Therefore, nitrogen concentration should be carefully controlled to guarantee excellent properties of nitrogen incorporated high-k dielectrics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *NITROGEN
*ENERGY bands
*DIELECTRICS
*ELECTRIC currents
*EXCITON theory
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 92
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 31554177
- Full Text :
- https://doi.org/10.1063/1.2903097