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Barium-doped \TiO2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the MOS structure on n-doped GaN show that the leakage current density is about \5.09 \times \10^-9\ \A/cm^2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing and a lower subthreshold swing (110 mV/decade) are obtained. The gate leakage current density is significantly improved, and the gate pulse measurement shows that the current collapse is more suppressed for MOSHEMTs. [ABSTRACT FROM PUBLISHER]

Pentacene-based organic thin-film transistors with solution-processed barium zirconate titanate dielectric layers are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics, such as reversible threshold voltage shifts and nondestructive readout. In addition, the reliability of the memory devices was confirmed by data retention time and repeated switching cycles' endurance testing. In addition, the possible mechanism of the memory effect was also discussed. These results suggest that the devices could potentially be applied to nonvolatile memory applications in organic electronics. [ABSTRACT FROM AUTHOR]

Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfO∞) as gate insulating layer have been demonstrated. The solution-process HfO∞ could not only exhibit a high-permittivity (K = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γS) on the surface of the HfO∞ layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfO∞ could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V ∙ s). [ABSTRACT FROM AUTHOR]

Abstract: InGaP/InGaAs metal–oxide–semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale liquid phase-oxidized InGaP as the gate dielectric is demonstrated. Not only does the MOS-PHEMT have the advantages of the MOS structure, but it also has high-carrier density and a high-mobility 2DEG channel. Using selective oxidation of InGaP by liquid phase oxidation, the MOS-PHEMT can be fabricated without additional recess processes. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cut-off frequency, lower minimum noise figure, and higher power-added efficiency than does its counterpart (reference PHEMT). The interface roughness effect on the DC and RF performance of devices is also discussed. [Copyright &y& Elsevier]