Search

I-V and C-V curves of metal-semiconductor-metal ultraviolet detector grown with AlGaN/GaN multi-quantum-well (MQW) interlayer are found to oscillate with applied bias voltage. A simple model is proposed to explain the oscillation phenomena of both curves. Resonant tunneling of polarization induced charges through the barriers of the nitride based MQW structure terminated with back-to-back configuration Schoktty contacts may play a key role in the oscillating phenomena. [ABSTRACT FROM AUTHOR]

A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor's sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa. [ABSTRACT FROM AUTHOR]