Highly sensitive seesaw capacitive pressure sensor based on SOI wafer.

Authors :: Yang, C. C.
Zhao, Q.
Gao, C. C.
Liu, G. D.
Zhang, Y. X.
Cui, W. P.
Hao, Y. L.
Source :: Electronics Letters (Wiley-Blackwell); 2/27/2014, Vol. 50 Issue 5, p1-2, 2p, 1 Black and White Photograph, 4 Diagrams, 1 Chart, 2 Graphs
Publication Year :: 2014
Abstract: A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor's sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa. [ABSTRACT FROM AUTHOR]