1. Structural and spectroscopic characterization of a new series of Ba2RE2Ge4O13(RE = Pr, Nd, Gd, and Dy) and Ba2Gd2−xEuxGe4O13tetragermanates
- Author
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Vladimir G. Zubkov, Yana V. Baklanova, Leonid Yu. Mironov, Olga A. Lipina, Alexander P. Tyutyunnik, Anastasia V. Chvanova, Ksenia G. Belova, Ludmila L. Surat, Andrey N. Enyashin, and Alexander Yu. Chufarov
- Subjects
Materials science ,Phosphor ,02 engineering and technology ,Crystal structure ,Nitride ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Inorganic Chemistry ,Crystallography ,Quantum efficiency ,Chemical stability ,0210 nano-technology ,Powder diffraction ,Monoclinic crystal system ,Solid solution - Abstract
A new series of Ba2RE2Ge4O13 (RE = Pr, Nd, Gd, Dy) germanates and Ba2Gd2−xEuxGe4O13 (x = 0.1–0.8) solid solutions have been synthesized using the solid-state reaction technique and characterized by X-ray powder diffraction. All compounds crystallize in the monoclinic system, space group C2/c, Z = 4. The crystal lattice consists of RE2O12 dimers, zigzag C2-symmetric [Ge4O13]10− tetramers, and ten-coordinated Ba atoms located in voids between polyhedra. The density-functional theory (DFT) calculations performed on a rich set of Ba2RE2Ge4O13 compounds have confirmed the high thermodynamic stability of monoclinic modification. Under ultraviolet (UV) light excitation Ba2Gd2−xEuxGe4O13 phosphors exhibit an orange-red emission corresponding to the characteristic f–f transitions in Eu3+ ions. The highest intensity of lines at 580 nm (5D0 → 7F0), 582–602 nm (5D0 → 7F1), 602–640 nm (5D0 → 7F2), 648–660 nm (5D0 → 7F3), and 680–715 nm (5D0 → 7F4) is observed for the samples with x = 0.4–0.6. The possibility of their application has been assessed by studying their color characteristics, quantum efficiency, and thermal stability. The obtained data indicate that Ba2Gd2−xEuxGe4O13 solids can be considered as promising materials for UV-excited phosphor-converted light-emitting diodes (LEDs) if an aluminum nitride substrate (λex = 255 nm) is used as a semiconductor chip.
- Published
- 2021
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