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Structural and spectroscopic characterization of a new series of Ba2RE2Ge4O13(RE = Pr, Nd, Gd, and Dy) and Ba2Gd2−xEuxGe4O13tetragermanates

Authors :
Vladimir G. Zubkov
Yana V. Baklanova
Leonid Yu. Mironov
Olga A. Lipina
Alexander P. Tyutyunnik
Anastasia V. Chvanova
Ksenia G. Belova
Ludmila L. Surat
Andrey N. Enyashin
Alexander Yu. Chufarov
Source :
Dalton Transactions. 50:10935-10946
Publication Year :
2021
Publisher :
Royal Society of Chemistry (RSC), 2021.

Abstract

A new series of Ba2RE2Ge4O13 (RE = Pr, Nd, Gd, Dy) germanates and Ba2Gd2−xEuxGe4O13 (x = 0.1–0.8) solid solutions have been synthesized using the solid-state reaction technique and characterized by X-ray powder diffraction. All compounds crystallize in the monoclinic system, space group C2/c, Z = 4. The crystal lattice consists of RE2O12 dimers, zigzag C2-symmetric [Ge4O13]10− tetramers, and ten-coordinated Ba atoms located in voids between polyhedra. The density-functional theory (DFT) calculations performed on a rich set of Ba2RE2Ge4O13 compounds have confirmed the high thermodynamic stability of monoclinic modification. Under ultraviolet (UV) light excitation Ba2Gd2−xEuxGe4O13 phosphors exhibit an orange-red emission corresponding to the characteristic f–f transitions in Eu3+ ions. The highest intensity of lines at 580 nm (5D0 → 7F0), 582–602 nm (5D0 → 7F1), 602–640 nm (5D0 → 7F2), 648–660 nm (5D0 → 7F3), and 680–715 nm (5D0 → 7F4) is observed for the samples with x = 0.4–0.6. The possibility of their application has been assessed by studying their color characteristics, quantum efficiency, and thermal stability. The obtained data indicate that Ba2Gd2−xEuxGe4O13 solids can be considered as promising materials for UV-excited phosphor-converted light-emitting diodes (LEDs) if an aluminum nitride substrate (λex = 255 nm) is used as a semiconductor chip.

Details

ISSN :
14779234 and 14779226
Volume :
50
Database :
OpenAIRE
Journal :
Dalton Transactions
Accession number :
edsair.doi...........b5a05c8ee795a80cbf2ee20b05066994
Full Text :
https://doi.org/10.1039/d1dt01780b