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An experimental investigation of the effects of high temperature on short channel NMOS and PMOS transistors in 6H-SiC is reported. Punchthrough characteristics are presented and examined at room temperature and 300/spl deg/C. The punchthrough current increases dramatically for scaled PMOS transistors at high temperature while the temperature dependence of electrical characteristics for short channel NMOS is small. The results presented in this paper also provide insight into design criteria for short channel silicon carbide (SiC) devices intended for operation at elevated temperatures.

We use vanadium ion implantation to form a highly resistive surface layer in the wide bandgap semiconductor silicon carbide (SiC). MESFETs are successfully fabricated using this highly resistive layer to isolate gate metal extensions along the channel width from the p-type epilayer. Fabrication and characterization of these devices are described in this paper.