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Planar 6H-SiC MESFETs with vanadium implanted channel termination
- Source :
- IEEE Transactions on Electron Devices. 44:907-910
- Publication Year :
- 1997
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1997.
-
Abstract
- We use vanadium ion implantation to form a highly resistive surface layer in the wide bandgap semiconductor silicon carbide (SiC). MESFETs are successfully fabricated using this highly resistive layer to isolate gate metal extensions along the channel width from the p-type epilayer. Fabrication and characterization of these devices are described in this paper.
- Subjects :
- Resistive touchscreen
Materials science
Fabrication
business.industry
Wide-bandgap semiconductor
Vanadium
chemistry.chemical_element
Gallium nitride
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Ion implantation
chemistry
Electronic engineering
Silicon carbide
Optoelectronics
Electrical and Electronic Engineering
business
Layer (electronics)
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........689c56580b6d06e0dad25cfe90924511
- Full Text :
- https://doi.org/10.1109/16.568059