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A wafer-level-packaging technology was used to integrate the 0.1 µm AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.

A 0.1 μm In02Al08Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In02Al08Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in order to mitigate the oxidation incurred by the AlSb layer. In this work, we have demonstrated excellent dc and rf performance on both devices and low-noise amplifiers (LNAs) using 0.1 μm In02Al08Sb-InAs HEMTs on 3-inch GaAs substrates. This accomplishment is crucial for phased-array applications with ultralow-power and oxidation-free requirements.

In this paper, we report AlSb/InAs HEMT high frequency perfornance up to 260 GHz fT. The 0.1-μm gate length and 80-um total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated fT and fmAx performance of 260 and 280 GHz, respectively at a drain voltage of 0.4 volts and drain current of 18 mA.

In this paper, we report record AlSb/InAs HEMT high frequency gain performance up to 275 GHz f/sub MAX/. The 0.1-/spl mu/m gate length and 80-/spl mu/m total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated f/sub T/ and f/sub MAX/ performance of 220 and 275 GHz, respectively, at a drain voltage of 0.5 V and drain current of 27 mA. To the best of our knowledge, this is the highest reported f/sub MAX/ and high-frequency available gain reported for InAs-channel HEMTs. Furthermore, it is first AlSb/InAs HEMT result that has achieved f/sub MAX/ greater than f/sub T/, which clearly demonstrates that this approach is not intrinsically limited in regards to achieving high frequency and high-gain characteristics.

In addition to the significant impact that VCSELs have on design, performance and cost of fiber optic modules, there is a potential for high density integration for SONET in the form of 1.3 /spl mu/m InGaAsN VCSEL arrays.

Because of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.