1. Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlO thin films
- Author
-
Yu Ju Chu and Yow-Jon Lin
- Subjects
010302 applied physics ,Resistive touchscreen ,Materials science ,Condensed matter physics ,Mechanical Engineering ,Metals and Alloys ,Oxide ,chemistry.chemical_element ,02 engineering and technology ,Sputter deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,Oxygen ,law.invention ,Crystallinity ,chemistry.chemical_compound ,chemistry ,Electrical resistance and conductance ,Mechanics of Materials ,law ,0103 physical sciences ,Materials Chemistry ,Thin film ,Crystallization ,0210 nano-technology - Abstract
The resistive switching characteristics of n-type CuAlO x thin films fabricated by rf magnetron sputtering under different gas-flow ratios of O 2 /Ar were examined in this study. The dependence of resistive switching on the O 2 /Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (V O ) is associated with electron hopping mediated through the V O trap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.
- Published
- 2017