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Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlO thin films
- Source :
- Journal of Alloys and Compounds. 691:263-268
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- The resistive switching characteristics of n-type CuAlO x thin films fabricated by rf magnetron sputtering under different gas-flow ratios of O 2 /Ar were examined in this study. The dependence of resistive switching on the O 2 /Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (V O ) is associated with electron hopping mediated through the V O trap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.
- Subjects :
- 010302 applied physics
Resistive touchscreen
Materials science
Condensed matter physics
Mechanical Engineering
Metals and Alloys
Oxide
chemistry.chemical_element
02 engineering and technology
Sputter deposition
021001 nanoscience & nanotechnology
01 natural sciences
Oxygen
law.invention
Crystallinity
chemistry.chemical_compound
chemistry
Electrical resistance and conductance
Mechanics of Materials
law
0103 physical sciences
Materials Chemistry
Thin film
Crystallization
0210 nano-technology
Subjects
Details
- ISSN :
- 09258388
- Volume :
- 691
- Database :
- OpenAIRE
- Journal :
- Journal of Alloys and Compounds
- Accession number :
- edsair.doi...........ece38a7183b421f746218b097255b0ef