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Objective: Herein, we report the effect of variation of hydrogen flow rate on the properties of Si:H films synthesized using PE-CVD method. Raman spectroscopy analysis show an increase in crystalline volume fraction and crystallite size implying that hydrogen flow in PE-CVD promotes the growth of crystallinity in nc-Si:H films with an expense of a reduction in deposition rate. Methods: FTIR spectroscopy analysis indicates that hydrogen content in the film increases with an increase in hydrogen flow rate and hydrogen is predominantly incorporated in Si-H2 and (Si-H2)n bonding configuration. The optical band gap determined using E04 method and Tauc method (ETauc) show an increasing trend with an increase in hydrogen flow rate and E04 is found higher than ETauc over the entire range of hydrogen flow rate studied. Results and Conclusion: We found that the defect density and Urbach energy increases with an increase in hydrogen flow rate. Photosensitivity (σPhoto /σDark) decreases from ~103 to ~1 when hydrogen flow rate is increased from 30 sccm to 100 sccm and can be attributed to amorphous-to-nanocrystallization transition in Si:H films. The results obtained from the present study demonstrated that hydrogen flow rate is an important deposition parameter in PECVD to synthesize nc-Si:H films.

Objective: Phosphorus doped hydrogenated nano-crystalline silicon (nc-Si:H) thin films were synthesized by catalytic chemical vapor deposition (Cat-CVD) method. Methods: The effect of deposition pressure on opto-electronic and structural properties was studied using various analysis techniques such as low angle XRD analysis, FTIR spectroscopy, Raman spectroscopy, UV-Visible spectroscopy, dark conductivity, etc. Results: From low angle XRD and Raman spectroscopy analysis, it is observed that an increase in deposition pressure causes Si:H films to transform and transit from amorphous to the crystalline phase. At optimized deposition pressure (300 mTorr), phosphorous doped nc- Si:H films having a crystallite size of ∼29 nm and crystalline volume fraction of ∼58% along with high deposition rate (∼29.7 Å/s) have been obtained. The band gap was found to be ∼1.98 eV and hydrogen content was as low as (∼1.72 at. %) for these films. Conclusion: The deposited films can be useful as an n-type layer for Si:H based p-i-n, tandem and c-Si hetero-junction solar cells.

Bismuth halide perovskites have been proposed as a non-toxic and chemically stable alternative to lead halide perovskites. Despite being highly stable, the devices based on bismuth perovskites have not been able to compete with the lead counterparts in terms of its efficiencies. The compounds that have been extensively studied i.e. Cs3Bi2I9 and MA3Bi2I9 form 0D (dimer) structures that possess wide indirect band gaps and poor charge transport properties which hinders the performance of devices based on these materials. Theoretical studies have revealed that replacing bigger A cation like Cs/MA by smaller cation like potassium (K) could favor the formation of layered 2D structures rather than 0D structure. We have synthesized inorganic K3Bi2I9 perovskite thin films by facile one-step spin coating method and investigated its structural, optical and morphological properties. The fabricated films showed strong absorption in UV and visible region of solar spectrum and possess optical band gap ∼2 eV. On comparison with the Cs analogue, it is observed that reduction in the cation size (Cs to K) hardly changes the band gap of K3Bi2I9 films which implies that the band gap of A3Bi2I9 perovskite is insensitive to A-site variation. Films deposited on preheated substrates showed comparatively good coverage without voids on the film surface. Our preliminary studies on this material showed that the films deposited by one-step solution method favored 0D structure rather than the expected 2D layered structure.

Zinc oxide nano-sheets (ZNS) loaded with Zeolitic Imidazole Framework 8 (ZIF8) nanocrystals, i.e. (ZNS@ZIF8) thin films, were successfully synthesized using electrodeposition and facile chemical bath deposition (CBD) for photoelectrochemical (PEC) splitting of water. The formation of ZNS nano-sheets and ZIF8 nano-crystals has been confirmed by field emission scanning electron microscopy (FE-SEM), low angle X-ray diffraction (XRD), micro-Raman spectroscopy, and Fourier transform infrared (FTIR) spectroscopy analysis. PEC activity of ZNS@ZIF8 photoanodes was evaluated using the linear sweep voltammetry (LSV) technique, and the photocurrent density is significantly enhanced when ZNS are decorated with ZIF8 nanocrystals. Electrochemical impedance spectroscopy (EIS) revealed that ZNS@ZIF8 had low charge transfer resistance compared to pristine ZNS counterparts. This led to considerably improved PEC performance of ZNS@ZIF8. Mott–Schottky (M–S) analysis of ZNS and ZNS@ZIF8 revealed a shift of flat band potential for the ZNS and ZNS@ZIF8 photoanodes, respectively. The shift of flat band potential indicates a clear shift in the Fermi level towards the conduction band, leading to an efficient charge transfer process across the electrolyte. The carrier density of ZNS and ZNS@ZIF8 photoanodes increases from 3.67 × 1019 cm−3 to 4.11 × 1020 cm−3. The enhanced applied bias photon conversion efficiency (ABPE) of ZNS@ZIF8 photoanodes suggests that ZNS@ZIF8 can be a prospective candidate for PEC and optoelectronic applications.

Herein, we report the synthesis of highly stable, Pb-free bismuth iodide (BiI3 or BI), stoichiometric methylammonium bismuth iodide [(CH3NH3)3Bi2I9 or MA3Bi2I9 or s-MBI] and non-stoichiometric methylammonium bismuth iodide [(CH3NH3)2BiI5 or MA2BiI5 or Ns-MBI] perovskite thin films for photodetector applications. These films are synthesized at room temperature by a single step solution process spin coating method. The structural, optical, and morphological properties of these films were investigated using different characterization techniques such as XRD, Raman spectroscopy, FE-SEM, UV-Visible spectroscopy, etc. Formation of BI, s-MBI and Ns-MBI thin films is confirmed by XRD and Raman spectroscopy measurements. XRD analysis reveals that BI has a hexagonal crystal structure and a P63/mmc hexagonal space group for s-MBI and Ns-MBI. The optical properties of BI thin films show a high absorption coefficient (∼104 cm−1) and a band gap of ∼1.74 eV. Similarly, s-MBI films have a high absorption coefficient (∼103 cm−1) and an indirect band gap of ∼1.8 eV. Moving from s-MBI to Ns-MBI, the value of absorption coefficient is ∼103 cm−1 and the band gap corresponds to ∼2 eV. Finally, photodetectors based on the synthesized BI, s-MBI and Ns-MBI perovskites have been directly fabricated on FTO substrates. All photodetectors exhibited highly stable photo-switching behaviour along with excellent photoresponsivity and detectivity, with a fast response and recovery time. Our work demonstrates that Pb-free BI, s-MBI and Ns-MBI perovskites have great potential in the future for realizing stable photodetectors.

Tin doped indium oxide (ITO) films with high conductivity and charge carrier mobility were deposited at room temperature using RF-magnetron sputtering, without any post annealing treatment. It is observed that structural, optical, morphological and electrical properties of these ITO films depend on deposition time. All the synthesized films show optical transmittance > 90% and band gap of ∼ 3.6 eV. A change in crystal orientation from (222) to (400) with slight shift of peaks toward lower 2θ has been observed with the increase in deposition time. The synthesized films are compact, uniform and free from cracks. Moreover, there was an increase in grain size and shape with the progress in deposition time. Synthesized ITO films with (400) orientation have high conductivity (∼ 2 × 103 Ω−1 cm−1), high charge carrier mobility (∼ 348 cm2 V−1 s−1) and a high figure of merit (104 × 10−3 Ω−1). The synthesized thin films can have prospective applications in opto-electronic devices such as solar cells, light emitting diodes, etc.

In this paper, we report the effect of sulfur (S) substitution with selenium (Se) in CZTS nanocrystals prepared by hot injection method. The formation of kesterite-copper zinc tin sulfide (Cu2ZnSnS4, CZTS) and copper zinc tin selenide (Cu2ZnSnSe4, CZTSe) nanocrystals is confirmed by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM) analysis. The XRD, TEM and atomic force microscopy (AFM) analysis shows an overall increase in average crystallite size upon Se substitution. AFM images revealed an increase in root mean square surface roughness (Sq) and average surface roughness (Sa) when S in CZTS is replaced by Se. The substitution of S by Se in host CZTS narrows the optical band gap from 1.56 to 1.03 eV. The ultraviolet photoelectron spectroscopy (UPS) analysis shows shift in valence band and conduction band edge in CZTSe compared to CZTS. The photocurrent density measurement in synthesized CZTSe thin films is ~ 4 to 5 times higher than CZTS thin films. The obtained results show that CZTSe can be a promising candidate as absorber material in photovoltaic applications.

In the present study, we report synthesis of tin sulfide (SnS) nano-rods using a simple solvothermal method at different reaction time period. The formation of single phase SnS has been confirmed by X-ray diffraction (XRD) and Raman analysis. The XRD analysis revealed that the predominant phase in all prepared samples is orthorhombic SnS. The formation of nano-rods of SnS was confirmed by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM) analysis. To investigate the optical properties of SnS nano-rods UV–visible spectroscopy analysis was carried out. We observed that the band gap of SnS nano-rods decreases with increase in reaction time and can be attributed to the quantum confinement effect. Finally, field emission investigations on the SnS nano-rods at the base pressure of 1 × 10− 8 mbar were carried out and found to be superior to the other chalcogenide nanostructures. As-synthesized SnS nano-rods emitter exhibits excellent field emission properties such as low turn-on field (~ 2.5 V/µm for 10 µA/ cm2), high emission current density (~ 647 µA/cm2 at 3.9 V/µm) and superior current stability (~ 5 h for ~ 1 µA). Thus, the facile one-step synthesis approach and robust nature of SnS nano-rods emitter can provide prospects for the future development of large-area emitter applications such as flat-panel-display devices.

In present work, we report synthesis of nanocrystalline Kesterite copper zinc tin sulfide (CZTS) films by RF magnetron sputtering method. Influence of calcination temperature on structural, morphology, optical, and electrical properties has been investigated. Formation of CZTS has been confirmed by XPS, whereas formation of Kesterite-CZTS films has been confirmed by XRD, TEM, and Raman spectroscopy. It has been observed that crystallinity and average grain size increase with increase in calcination temperature and CZTS crystallites have preferred orientation in (112) direction. NC-AFM analysis revealed the formation of uniform, densely packed, and highly interconnected network of grains of CZTS over the large area. Furthermore, surface roughness of CZTS films increases with increase in calcination temperature. Optical bandgap estimated using UV–Visible spectroscopy decreases from 1.91 eV for as-deposited CZTS film to 1.59 eV for the film calcinated at 400 °C which is quite close to optimum value of bandgap for energy conversion in visible region. The photo response shows a significant improvement with increase in calcinations temperature. The employment these films in solar cells can improve the conversion efficiency by reducing recombination rate of photo-generated charge carriers due to larger grain size. However, further detail study is needed before its realization in the solar cells.

In present study nanocrystalline tungsten carbide (nc-WC) thin films were deposited by HW-CVD using heated W filament and CF4 gas. Influence of CF4 flow rate on structural, optical and electrical properties has been investigated. Formation of WC thin films was confirmed by low angle XRD, Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) analysis. Low angle XRD analysis revealed that WC crystallites have preferred orientation in (101) direction and with increase in CF4 flow rate the volume fraction of WC crystallites and its average grain size increases. Formation of nano-sized WC was also confirmed by transmission electron microscopy (TEM) analysis. UV-Visible spectroscopy analysis revealed increase in optical transmission with increase in CF4 flow rate. The WC film deposited for 40 sccm of CF4 flow rate show high transparency (- 80-85 %) ranging from visible to infrared wavelengths region. The band gap shows increasing trend with increase in CF4 flow rate (3.48-4.18 eV). The electrical conductivity measured using Hall Effect was found in the range - 103-141 S/cm over the entire range of CF4 flow rate studied. The obtained results suggest that these wide band gap and conducting nc-WC films can be used as low cost counter electrodes in DSSCs and co-catalyst in electrochemical water splitting for hydrogen production.