Back to Search
Start Over
Probing the effect of selenium substitution in kesterite-Cu2ZnSnS4 nanocrystals prepared by hot injection method
- Source :
- Journal of Materials Science: Materials in Electronics. 30:14781-14790
- Publication Year :
- 2019
- Publisher :
- Springer Science and Business Media LLC, 2019.
-
Abstract
- In this paper, we report the effect of sulfur (S) substitution with selenium (Se) in CZTS nanocrystals prepared by hot injection method. The formation of kesterite-copper zinc tin sulfide (Cu2ZnSnS4, CZTS) and copper zinc tin selenide (Cu2ZnSnSe4, CZTSe) nanocrystals is confirmed by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM) analysis. The XRD, TEM and atomic force microscopy (AFM) analysis shows an overall increase in average crystallite size upon Se substitution. AFM images revealed an increase in root mean square surface roughness (Sq) and average surface roughness (Sa) when S in CZTS is replaced by Se. The substitution of S by Se in host CZTS narrows the optical band gap from 1.56 to 1.03 eV. The ultraviolet photoelectron spectroscopy (UPS) analysis shows shift in valence band and conduction band edge in CZTSe compared to CZTS. The photocurrent density measurement in synthesized CZTSe thin films is ~ 4 to 5 times higher than CZTS thin films. The obtained results show that CZTSe can be a promising candidate as absorber material in photovoltaic applications.
- Subjects :
- 010302 applied physics
Materials science
Band gap
Tin selenide
Analytical chemistry
engineering.material
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
symbols.namesake
chemistry.chemical_compound
chemistry
0103 physical sciences
symbols
engineering
Crystallite
Kesterite
CZTS
Electrical and Electronic Engineering
Thin film
Raman spectroscopy
Ultraviolet photoelectron spectroscopy
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........1c7dfb2796b90f459da2352638f533a4
- Full Text :
- https://doi.org/10.1007/s10854-019-01851-7