1. Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms
- Author
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Simona Achilli, Nguyen H. Le, Takashi Tanii, Enrico Prati, Guido Fratesi, Takahiro Shinada, Nicola Manini, Marco Turchetti, Giovanni Onida, and Giorgio Ferrari
- Subjects
Hubbard model ,Materials science ,Silicon ,chemistry.chemical_element ,FOS: Physical sciences ,Germanium ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,Biomaterials ,Delocalized electron ,Ge-vacancy complex ,law ,Electrochemistry ,point defects ,quantum transport ,Condensed Matter - Materials Science ,Dopant ,business.industry ,Transistor ,Materials Science (cond-mat.mtrl-sci) ,single-ion implantation ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Crystallographic defect ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Semiconductor ,chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.
- Published
- 2021
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