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Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms
- Publication Year :
- 2021
- Publisher :
- arXiv, 2021.
-
Abstract
- Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.
- Subjects :
- Hubbard model
Materials science
Silicon
chemistry.chemical_element
FOS: Physical sciences
Germanium
02 engineering and technology
010402 general chemistry
01 natural sciences
law.invention
Biomaterials
Delocalized electron
Ge-vacancy complex
law
Electrochemistry
point defects
quantum transport
Condensed Matter - Materials Science
Dopant
business.industry
Transistor
Materials Science (cond-mat.mtrl-sci)
single-ion implantation
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallographic defect
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Semiconductor
chemistry
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....75e30cc05d1f9f8ab8d3db01f5f838eb
- Full Text :
- https://doi.org/10.48550/arxiv.2102.01390