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Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarkable higher room temperature dark conductivity is obtained in the multilayer that includes a boron doped well, rather than boron doped barrier, indicating efficient doping in the former case. Room temperature lateral dark conductivity up to 10-3 S/cm is measured on the multilayer with boron doped barrier and well. The result compares favorably with silicon dioxide and makes SiC encouraging for application in photovoltaic devices. © 2012 Elsevier B.V. All rights reserved.

Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c-AFM) and at macro-scale by temperature dependent conductivity measurements. The mixture is composed of highly conductive Si nanoclusters and moderately conductive SiC nanoclusters in a disordered matrix. The conduction mechanism takes place via band states induced by the disorder at the interface between nanodot clusters. Structural properties have been extracted by optical spectroscopy analyses. The results contribute to the understanding of the microscopical electronic mechanisms of the composite material, which is a candidate for third generation photovoltaics.

In this work we present the results we obtained by processing 1 Ωcm p and n-type, multi-crystalline silicon wafers when a double hydrogenated amorphous/crystalline silicon heterojunction is applied to sandwich the substrate, at the sunward surface to form the emitter and at the rear side to act as back surface field. We have investigated the role of the multi-crystalline silicon surface conditioning, on the base of illuminated and dark current-voltage characteristic, quantum efficiency measurements, and overall photovoltaic solar cell performance. In particular, a comparison between an acidic isotexturing and a chemical polishing treatment is presented and discussed in detail. We have found that the morphology of the multi-crystalline silicon surface plays a tough role in the a-Si:H properties when used as surface passivating layer. The commercial acidic surface treatment, commonly used in diffused junction mc-Si solar cell fabrication, requires a level of passivation which is not easily achievable using the very thin a-Si:H film, needed in heterojunction technology. The deposition of a uniform thickness over a whole textured silicon surface of a thin amorphous layers still requires further investigation and improvement. Nevertheless the high Voc obtained on p-type doped mc-Si (625 mV) remarks the effectiveness of a-Si:H/mc-Si technology in achieving high photovoltaic efficiency using low thermal budget manufacturing process. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ordered silicon nanocrystals in silicon carbide are produced by Plasma Enhanced Chemical Vapor Deposition by means of the multilayer approach followed by annealing at 1100 °C. The crystallization is verified by Raman scattering, X-ray diffraction, Transmission Electron Microscopy, and UV–vis spectroscopy. The conditions for the periodic structure to survive the high temperature annealing and for the SiC barrier to confine the Si crystal growth are examined by energy-filtered transmission electron microscopy and X-ray reflection. The final layout appears to be strongly influenced by the structural features of the as-deposited multilayer. Threshold values of Si-rich carbide sublayer thickness and Si-to-C ratio are identified in order to preserve the ordered structure. The crystallized fraction is observed to be correlated with the total silicon volume fraction. The constraints are examined through the use of ab-initio calculations of matrix-embedded silicon nanocrystals, as well as in terms of existing models for nanocrystal formation, in order to establish the role played by the interface energy on nanocrystal outgrowth, residual amorphous fraction, and continuous crystallization. A parameter space of formation of ordered Si nanocrystals is proposed. The diffusivity of carbon in the crystallized material is evaluated, and estimated to be around 10–16 cm2/s at 1100 °C.

In this work we present a structural, optical and electrical characterization of Si x C 1− x /SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance ( R&T ) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R&T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC y O z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers.

Single-polished c-Si (1 0 0) wafers were textured in aqueous solutions with varying concentrations of tetra-methyl ammonium hydroxide (TMAH). The resulting surface reflectance and morphology were examined as a function of etching time and temperature, TMAH concentration, and addition of isopropyl alcohol to the solution. The lowest reflectance, 9.8% at a 600-nm wavelength with 0.3% scattering over a 4″ wafer surface, was obtained after 40 min of etching in a 2% TMAH solution at 80 °C under 700 rpm magnetic stirring. Upon adding isopropyl alcohol to the solution, the resulting pyramids were round-edged, and 12% sample reflectance was obtained. The results are interpreted in terms of micro-masking formation and temperature-dependent crystallographic selectivity. The compatibility of the treatment with photovoltaic applications was evaluated by studying the performance of heterojunction solar cells, which are particularly sensitive to surface quality. A degradation of the open circuit voltage was observed in devices fabricated on surfaces featuring crooked pyramid sides. Optimised process conditions led to smooth pyramid sides and no degradation of the open circuit voltage, which indicates no sign of increased surface recombination-centre concentration. The reduced reflectance resulted in a 16% increase of the short circuit current of the solar cell device.

Thermally treated silicon rich oxides (SRO) used as starting material for the fabrication of silicon nanodots represent the basis of tunable bandgap nanostructured materials for optoelectronic and photonic applications. The optical modelization of such materials is of great interest, as it allows the simulation of reflectance and transmittance (R&T) spectra, which is a powerful non destructive tool in the determination of phase modifications (clustering, precipitation of new phases, crystallization) upon thermal treatments. In this paper, we study the optical properties of a variety of as-deposited and furnace annealed SRO materials. The different phases are treated by means of the effective medium approximation. Upon annealing at low temperature, R&T spectra show the precipitation of amorphous silicon nanoparticles, while the crystallization occurring at temperatures higher than 1000 °C is also clearly identified, in agreement with structural results. The existing literature on the optical properties of the silicon nanocrystals is reviewed, with attention on the specificity of the compositional and structural characteristics of the involved material. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Indium tin oxide (ITO) thin films were deposited by magnetron sputtering from a ceramic target, and annealed at temperatures up to 1000 °C in N2 atmosphere. Some samples were capped in a-Si:H or spin-on glass to prevent residual oxygen contamination from the annealing ambient, and annihilation of oxygen vacancies. The electrical and optical properties were measured before and after annealing. It is found that the protecting layer effectively limits the ITO degradation up to 900 °C, whereas high transparency is preserved in all cases. The results indicate the applicability of the procedure to high temperature devices, and opens the way to the application of a variety of nanostructured materials in advanced photovoltaic devices.