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Presents a study which investigated the stress in plasma-enhanced chemical vapor deposition hydrogenated amorphous silicon nitrogen[subx] films. Experimental details; Results and discussion; Conclusion.

Reports on the relationship between the stress and bonding properties of amorphous SiN[subx]:H films. Deposition of amorphous SiN[subx]:H films on single crystal silicon; Significance of amorphous SiN[subx]:H films deposited by plasma-enhanced chemical vapor deposition; Densities of the SiH and NH bonds.

Presents information on a study which discussed changes of the structural and electrical properties brought about by an in situ plasma supply during growth of undoped and boron doped low-pressure chemical vapor deposition poly-silicon film and plasma-enhanced chemical vapor deposition films. Structural property; Effects of plasma supply on improvement of the surface roughness; Electrical property.

Abstract: We exposed crystalline Si (C-Si) substrates to a NH3 plasma by the method of plasma enhanced chemical vapor deposition (PECVD) and the Si substrates were nitrided at a nitridation temperature, T n, between 300 and 600°C. The nitrided layers were grown directly on n-type C-Si substrates with high resistivity for measurements of electron resonance (ESR) and Fourier transform infrared (FTIR) absorption. The intensity of the N–H IR bending band increased with increasing T n up to 450°C, and then decreased again with a further increasing in T n. We found a strong correlation between the change in the ESR spin density, N s, and that in the N–H bending intensity, which was obtained from the spectral intensity at around 1200cm−1. Furthermore, incorporation of N atoms in amorphous Si x N y layers may improve the structural property at T n =450°C for various insulating applications. In addition, we found that the atomic densities and/or composition of a-Si x N y may decrease the BHF etch rate. [Copyright &y& Elsevier]

In this letter, polycrystalline 3C-SiC (111) films were deposited by plasma enhanced chemical vapor deposition system at a temperature of 670 °C using a gas mixture of SiH4/CH4/H2/(CF4). The optical properties of deposited films with different feed gases and different structures were investigated. In these studies, a broad photoluminescence band was observed for films with lower crystallinity and the radiative transitions between the conduction and valance band tails were suggested as the origin of the observed peak. The band gap of these polycrystalline SiC films was estimated at around 2.10 eV. [ABSTRACT FROM AUTHOR]

Polycrystalline silicon (poly-Si) films were prepared on a fused quartz substrate at 700 °C by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced CVD (PECVD) using the same fabrication system. Poly-Si films with a strong <100> and <110> preferential orientation (P.O.) are obtained by changing the rf power for generating the plasma under the same preparation condition. The surface of the PECVD films with dominant <100> and <110> textures is very smooth in contrast with that of LPCVD films. These textures are maintained after thermal oxidation at 1000 °C, and the degree of P.O. and the grain size increase. [ABSTRACT FROM AUTHOR]

Amorphous Si oxynitride (a-SiOxNy) films were deposited at 300 °C using a plasma-enhanced chemical vapor deposition technique, by varying the NH3 flow rate, [NH3], under fixed SiH4 and O2 flow rates to control the x- and y-values. The characteristics of defects were investigated vis-a&grave;-vis structural and bonding properties. These films were ‘stoichiometric’, including no or less homobonds. As [NH3] increases, the x- and y-values decreased and increased, respectively, and a relationship of 2x+3y=4.14 (±0.02) was found. With increasing [NH3], the deposition rate increased, but the defect density and the stress can be decreased. [Copyright &y& Elsevier]