1. Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks
- Author
-
Gang Du, Xing Zhang, Wangyong Chen, Ming Tian, Xiaoyan Liu, Linlin Cai, and Cao Yongfeng
- Subjects
010302 applied physics ,Materials science ,business.industry ,Silicon on insulator ,Port (circuit theory) ,Hardware_PERFORMANCEANDRELIABILITY ,01 natural sciences ,Temperature measurement ,Electronic, Optical and Magnetic Materials ,Crosstalk (biology) ,Hardware_GENERAL ,Logic gate ,0103 physical sciences ,Thermal ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Hardware_LOGICDESIGN ,Electronic circuit ,Voltage - Abstract
In this letter, a new method based on the temperature dependence of gate leakage current for accurately characterizing thermal crosstalk is proposed and performed on the advanced silicon-on-insulator (SOI) MOSFETs. The developed technique enables to capture the pure thermal crosstalk effect as it excludes the self-heating impact during the measurement. Moreover, it is proven robust over a large range of gate voltages regardless of the difference of device types, which is demonstrated on a pair of devices with a shared port. The accuracy of the thermal crosstalk measurement benefits in determining the overall thermal performance of the nano-scaled circuits under the mutual heating impacts. It offers a possible hardware solution to thermal monitor and management.
- Published
- 2021