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KangFuXinYe (KFX), the ethanol extract of the dried whole body of Periplaneta americana, is a well-known important Chinese medicine preparation that has been used to treat digestive diseases such as gastric ulcers for many years in China. However, its therapeutic effect and mechanism are not yet well understood. Thus, the aim of this study was to investigate the gastro-protective effects of KangFuXinYe (KFX) in indomethacin-induced gastric damage. Rats were randomly divided into six groups as follows: control, treated with indomethacin (35 mg·kg-1), different dosages of KFX (2.57, 5.14 and 10.28 mL·kg-1, respectively) plus indomethacin, and sucralfate (1.71 mL·kg-1) plus indomethacin. After treatment, rat serum, stomach and gastric homogenates were collected for biochemical tests and examination of histopathology firstly. Rat serum was further used for metabolomics analysis to research possible mechanisms. Our results showed that KFX treatment alleviated indomethacin-induced histopathologic damage in rat gastric mucosa. Meanwhile, its treatment significantly increased cyclooxygenase-1 (COX-1), prostaglandin E2 (PGE2) and epidermal growth factor (EGF) levels in rat serum and gastric mucosa. Moreover, KFX decreased cyclooxygenase-2 (COX-2) and interleukin-6 (IL-6) levels. Nine metabolites were identified which intensities significantly changed in gastric damage rats, including 5-hydroxyindoleacetic acid, indoxylsulfuric acid, indolelactic acid, 4-hydroxyindole, pantothenic acid, isobutyryl carnitine, 3-methyl-2-oxovaleric acid, sphingosine 1-phosphate, and indometacin. These metabolic deviations came to closer to normal levels after KFX intervention. The results indicate that KFX (10.28 mL·kg-1) exerts protective effects on indomethacin-induced gastric damage by possible mechanisms of action (regulating tryptophan metabolism, protecting the mitochondria, and adjusting lipid metabolism, and reducing excessive indomethacin).

Silicon film as a surface passivation layer is reported to reduce surface recombination on silicon nanowires (SiNWs) and thus enable to improve SiNW solar cell (SC) performance. A question yet to be answered regards the link between the silicon film assets and the solar cell performances. We investigated the effect of the properties of silicon films on the SiNWs SC performances by adjusting hydrogen dilution. Our results showed that the open-circuit voltage (Voc) and short-circuit current density (Jsc) of SiNWs SC increase until hydrogen dilution 10 and then decrease. An open-circuit voltage of 0.397 V and short-circuit current density of 18.42 mA/cm2 are achieved at optimized hydrogen dilution. Based on the analysis of silicon film properties we proposed that the increase of defect density with hydrogen dilution was the main cause for the deterioration of SiNWs SC performance.

High power and high brightness InP based lasers around 2 µm are attractive for many applications due to their intrinsic compatibility with photonic integrated circuits. However, high output power and low lateral divergence are difficult to be realized simultaneously with the traditional ridge waveguide structure. In this paper, we demonstrate significantly enhanced performance of 1.96 µm InP based InGaAs quantum well lasers by tapered waveguide structures. The double-channel waveguide laser with a straight waveguide section and a small-angle tapered optical amplifier section showed fundamental transverse mode lasing with an excellent beam quality. In agreement with our designed waveguide structures, the devices’ lateral divergence is remarkably reduced. For the device with a 3° tapered angle, the narrowest full width at half maximum (FWHM) of 8.2° of the far-field distribution is realized and the continuous-wave output power, measured at 25 °C, is increased up to 40 mW, which is much higher than the 12 mW of the laser with only a straight ridge waveguide.

In this paper, Methods of SOC estimation of Extended Kalman Filter (EKF) is studied based on the characteristics of Nickel-Metal Hydride (Ni-MH) battery pack with 120 cells in series and 8Ah capacity for HEV. In the study of EKF-based SOC estimation, the improved Thevenin circuit model is adopted, and a new hybrid pulse power characterization （HPPC） test is designed to identify the model parameters by using piecewise linear regression method. In this way, the precision of the circuit model is improved. In addition, The Kalman gain matrix is optimized for EKF iterative algorithm by two ways: a constant gain is increased taking into account the entire process; a dynamic gain which increases at the beginning of abrupt change and decreases rapidly after abrupt change is set up. The improvement achieves a good tracing prediction.

Quantum dots infrared photodetectors (QDIPs) theoretically have several advantages compared with quantum wells infrared photodetectors (QWIPs). In this paper, we discuss the theoretical advantages of QDIPs including the normal incidence response, lower dark current, higher responsivity and detectivity, etc. Recent device fabrication and experiment results in this field are also presented. Based on the analysis of existing problems, some approaches that would improve the capability of the device are pointed out.

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultra-violet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs(001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (∼600°C) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity-coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated. The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics of c-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski– Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100–200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.

Infrared detection within the atmospheric window between 3 to 5μm has gained great interest because of its wide range of applications, such as eye-safe free-space optical communication links and high-precision time-of-flight measurements used in 3D imaging. In this letter, we report on the characteristics of two InP-based strain-compensated InGaAs/InAlAs quantum cascade detectors (QCDs) detecting around 4 μm and 4.5 μm, which are promising candidates for applications in this wavelength range. Maximal responsivity values of 11.43mA/W at 180K and 10.1 mA/W at 78K and Johnson noise limited detectivities of 2.43×10 10 and 2×10 10 Jones at 78K, for the 4.5 μm and the 4 μm device, respectively, were obtained. In addition, both devices can work up to room temperature with responsivities of 0.81 mA/W(4.5μm) and 1.64 mA/W(4μm).

DLTS spectra of deep level impurities in semiconductors often display anomalies such as zero offsets, steps or peaks with reversed signs. For a correct interpretation of the spectra it is important to understand those features. They are explained here, and shown to be related to the presence of free-carrier tails which extend into the depletion region of a semiconductor junction. Gold-doped silicon and the so-called A - and B -levels in GaAs are chosen for illustration of the effects.