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While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard. Although it is envisioned that 6G may bring an unprecedent transformation of the wireless networks in comparison with previous generations, the necessity to develop analog and RF specialized technologies to address new frequency spectra will remain. In this paper, we review the development of PD-SOI CMOS and SiGe BiCMOS technologies addressing 5G RF Integrated Circuits (RFICs) and their evolutions for 6G.

This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous doping species are studied. On the one hand, both silicon defects and dopants profiles control are evaluated and on the other hand, hf performances are presented. Carbon-phosphorous co-implantation is also investigated and a state-of-the-art 450 GHz $f_{\text{T}}$ HBT compatible with 55-nm MOSFETs is demonstrated through a device layout study.

In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si 0.8 Ge 0.2 homojunctions, which we compare to those measured on conventional MOSFETs and Schottky Barrier FETs. The difference with the former is immediate since a single TFET can display a transistor effect under both pull-up (nTFET) and pull-down (pTFET) biasing conditions. This is however a property shared with SBFETs, in which injection occurs via tunneling through a single carrier Schottky Barrier instead of band-to-band tunneling. Without requiring quantitative considerations on the current levels or transfer characteristics, we find that simply performing the same dual I D – V DS electrical tests while voluntarily “swapping” the S/D terminals unequivocally characterizes TFET operation, even compared to asymmetrically doped SBFETs.

BM23 is the general-purpose EXAFS bending-magnet beamline at the ESRF, replacing the former BM29 beamline in the framework of the ESRF upgrade. Its mission is to serve the whole XAS user community by providing access to a basic service in addition to the many specialized instruments available at the ESRF. BM23 offers high-signal-to-noise ratio EXAFS in a large energy range (5–75 keV), continuous energy scanning for quick-EXAFS on the second timescale and a micro-XAS station delivering a spot size of 4 µm × 4 µm FWHM., BM23 is the general-purpose EXAFS bending-magnet beamline at the ESRF, replacing the former BM29 beamline in the framework of the ESRF upgrade. Its mission is to serve the whole XAS user community by providing access to a basic service in addition to the many specialized instruments available at the ESRF. BM23 offers high signal-to-noise ratio EXAFS in a large energy range (5–75 keV), continuous energy scanning for quick-EXAFS on the second timescale and a micro-XAS station delivering a spot size of 4 µm × 4 µm FWHM. It is a user-friendly facility featuring a high degree of automation, online EXAFS data reduction and a flexible sample environment.

To co-integrate bipolar devices with 28 nm FDSOI CMOS using the epitaxial extrinsic base isolated from the collector architecture, an epitaxy is needed on a pre-implanted SOI. The issue of thin film agglomeration induced by epitaxy pre-bake is addressed. Particularly, it is shown that high dose implantation induced damages and point defects lead to a decrease of the SOI critical temperature of agglomeration. In this study, heated implantation is proposed in order to solve this issue.

International audience; In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation. (c) 2017 The Japan Society of Applied Physics

International audience; 3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are obtained thanks to the adapted extension first architecture and the introduction of mobility boosters (pMOS: SiGe 27% channel / SiGe:B 35% RSD and nMOS: SiC:P RSD). This first demonstration of n and p extension first FDSOI devices shows that low temperature activated device can match the performance of a device with state-of-the-art high temperature process (above 1000°C).

International audience; We present experimental and simulated J-V characteristics of Metal/Insulator/Semiconductor (MIS) junctions aiming at improving the contact resistivity for advanced CMOS nodes. We show that an Atomic Layer Deposition (ALD)-based Al2O3 process may induce a native silicon oxide regrowth leading to an additional tunneling resistance in series. A modelling-based analysis of Metal/Insulator/Insulator/Metal (MIIS) contacts, including the potentially beneficial interfacial dipole, provides a new outlook on high-kappa/SiO2 bilayers for low resistivity contacts.

International audience; In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to result in simultaneously successful Fermi-level pinning alleviation on both n and pFETs. We show that the added $C_{\mathrm { {MIS}}}$ contributes to a significant extra improvement in terms of intrinsic inverter delay. In particular, an optimal configuration consisting of Pt-liner/ p-Si and Zr/TiO2(15A)/n-Si contacts can lead to a ring oscillator frequency higher than that of p and nFETs each flanked by ideal ohmic contacts with $10^{-9}~\Omega \cdot {\mathrm{ cm}}^{2}$ resistivity.

In the overwhelming majority of cases, current-voltage characteristics of metal-based contacts on semiconductors are non-linear around 0V even for degenerate interfacial doping levels. Any contact resistivity specification is therefore meaningless without the knowledge of the effective bias across the contact. For the first time, the efficiency of a dielectric insertion for contact resistance reduction was properly evaluated by solving the self-consistent case of voltage sharing for an aggressively scaled transistor flanked by two trench Metal/ Insulator/Semiconductor (MIS) contacts. We found that leveraging the Fermi Level depinning via optimized MIS contacts could lead to a +92% drive current (V GS =V dd =0.7V) increase versus a Titanium liner-based silicidation-free approach.

In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si 0.8 Ge 0.2 homojunctions, which we compare to those measured on conventional MOSFETs and Schottky Barrier FETs. The difference with the former is immediate since a single TFET can display a transistor effect under both pull-up (nTFET) and pulldown (pTFET) biasing conditions. This is however a property shared with SBFETs, in which injection occurs via tunneling through a single carrier Schottky Barrier instead of band-to-band tunneling. Without requiring quantitative considerations on the current levels or transfer characteristics, we find that simply performing the same dual I d -V ds electrical tests while voluntarily "swapping" the S/D terminals unequivocally characterizes TFET operation, even compared to asymmetrically doped SBFETs.

We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.

A new design for a polychromator Bragg bender at ID24 Dispersive EXAFS beamline (ESRF) shows improvements in stability, in the shape of the bent crystal and in the efficiency of adjustments to find the best focal spot.

Introduction It is hypothesized that in the etiology of schizophrenia genetic and environmental factors are involved. Between the environmental events linked to the causation of this condition an inmune dysfunction has been described. First degree biological relatives of people with schizophrenia also have an incrased incidence of autoimmune diseases. Objectives The aim of this work was to examine the serum levels of proinflammatory cytokines (IL-1β, sIL-2R IL-6, IL-12p70, TNF-α and IFN-γ) as well as of anti-inflammatory cytokines (IL-4 and IL-10) in male patients with schizophrenia and in their first degree-biological relatives. Methods Blood samples were obtained from patients with a diagnosis of schizophrenia in a stable psychophatological condition (n = 36), first degree biological relatives of those patients and a healthy control group (n = 26). Serum interleukins were analyzed using a commercial ELISA preparation (Bender MedSystems). We used non-parametric test for statistical analysis. Results Patients with schizophrenia showed significantly higher serum levels of proinflammatory cytokines (sIL-2R, IL-6, TNF-α, IFN-γ and IL12-p70) and lower serum levels of the anti-inflammatory cytokine IL-4 than in the healthy control group. The unaffected first-degree relatives showed changes in proinflammatory cytokines (sIL-2R, IL-6 and TNF-α,) in the same way as the corresponding schizophrenia patients, but at a lower level than the healthy control group. Conclusions Ours findings suggest that sIL-2R, IL-6 and TNF-a may be biologic vulnerability markers for psychiatric disorders and also these alterations might have an hereditably pattern.

An original design for a cooled exchangeable polychromator for energy-dispersive XAFS (X-ray absorption fine structure) working either in the transmission configuration (Laue case) or in the reflection configuration (Bragg case) is presented. It enables the acquisition of X-ray absorption spectra between 5 and 25 keV with a spot size on the sample that can reach to less than 20 microm FWHM for some energies. Only 1 h is needed to exchange both benders in operative mode. Parallel transmission spectra with a bandpass between 5 and 10% can be obtained in the full energy range. The dispersive optics and mechanics of ID24 (ESRF, Grenoble, France) have been designed to obtain XAFS spectra in less than 1 s and, in some cases, in the millisecond range.