1. Photoconductivity of Ge/Si quantum dot photodetectors
- Author
-
Philippe Boucaud, Samuel E. Schacham, T. Brunhes, N. Rappaport, Daniel Bouchier, Eliezer Finkman, V. Le Thanh, and Sébastien Sauvage
- Subjects
Physics ,Photoluminescence ,business.industry ,Photoconductivity ,Photodetector ,chemistry.chemical_element ,Germanium ,Astrophysics::Cosmology and Extragalactic Astrophysics ,Electronic structure ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,Quantum dot ,Optoelectronics ,Infrared detector ,business ,Dark current - Abstract
Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I–V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current. � 2003 Elsevier B.V. All rights reserved.
- Published
- 2003