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Temperature dependence of responsivity in quantum dot infrared photodetectors
- Source :
- Physica E: Low-dimensional Systems and Nanostructures, Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2003, 17, pp.636-637. ⟨10.1016/S1386-9477(02)00915-3⟩
- Publication Year :
- 2003
- Publisher :
- Elsevier BV, 2003.
-
Abstract
- Photoconductive spectra of InAs quantum dots embedded within InAlAs barriers show several peaks, ranging from 4 to 12 μm . The nature of these peaks differs, as indicated by their dependence on bias and on temperature. The long wavelength peak drops rapidly with temperature, while the first peak hardly changes up to 60 K . While the wide peak around 4 μm depends linearly on bias, indicating a direct excitation into the quasi-continuum, the peak at 12 μm increases super-linearly since the photocarriers are generated by a two-step process, excitation into a bound level followed by tunneling to the continuum. This explains the drop with temperature, since as the temperature increases more carriers relax from the excited state back to the ground level rather than tunneling into the continuum.
- Subjects :
- Physics
business.industry
Photoconductivity
Drop (liquid)
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Molecular physics
Atomic and Molecular Physics, and Optics
Spectral line
Electronic, Optical and Magnetic Materials
Responsivity
Quantum dot
Excited state
0103 physical sciences
Optoelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
010306 general physics
0210 nano-technology
business
ComputingMilieux_MISCELLANEOUS
Quantum tunnelling
Excitation
Subjects
Details
- ISSN :
- 13869477
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Physica E: Low-dimensional Systems and Nanostructures
- Accession number :
- edsair.doi.dedup.....68119cf66d5a2fcf1cab43fbf31ffd65