1. Growth kinetics study in halide chemical vapor deposition of SiC
- Author
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Nigam, S., Chung, H.J., Polyakov, A.Y., Fanton, M.A., Weiland, B.E., Snyder, D.W., and Skowronski, M.
- Subjects
- *
NONMETALS , *CHEMICAL elements , *SILICON , *VAPOR-plating - Abstract
Abstract: Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150°C. High-quality SiC crystals were deposited at growth rates in the 100–300μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations. [Copyright &y& Elsevier]
- Published
- 2005
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