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Abstract: Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150°C. High-quality SiC crystals were deposited at growth rates in the 100–300μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations. [Copyright &y& Elsevier]

The dislocation nucleation during 4H silicon carbide homoepitaxy has been investigated using chemical etching, optical microscopy, atomic force microscopy, and transmission electron microscopy. Threading edge dislocations formed characteristic arrays of etch pit pairs on the epilayer surface, perpendicular to the off-cut direction. The arrays were nucleated throughout the epitaxy process, had length of between 30 and 600 μm and linear dislocation density of about 1×103 cm−1. The Burgers vectors of two dislocations in each pair were consistent with pairs nucleating as half loops and their directions were the same for all dislocations in an array. [Copyright &y& Elsevier]