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Presents a study which examined the bonding properties of glow discharge polycrystalline and amorphous silicon carbide films. Correlation of the growth mechanism and the effects of hydrogen dilution with changes in bonding configuration; Experimental procedure; Results and discussion.

Reports on the relationship between the stress and bonding properties of amorphous SiN[subx]:H films. Deposition of amorphous SiN[subx]:H films on single crystal silicon; Significance of amorphous SiN[subx]:H films deposited by plasma-enhanced chemical vapor deposition; Densities of the SiH and NH bonds.

Presents information on a study which analyzed the effects brought about by the addition of nitrogen on the bonding properties as a function of the degree of crystallization for boron-doped microcrystalline into amorphous silicon nitride[subx]:hydrogen films. Investigation of the degree of crystallization by means of x-ray diffraction; Vibrational-absorption profiles; Electrical and optical properties.