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Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by x-ray diffraction and x-ray photoelectron spectroscopy.
- Source :
-
Journal of Applied Physics . 6/1/1992, Vol. 71 Issue 11, p5395. 6p. 7 Graphs. - Publication Year :
- 1992
-
Abstract
- Presents a study which examined the bonding properties of glow discharge polycrystalline and amorphous silicon carbide films. Correlation of the growth mechanism and the effects of hydrogen dilution with changes in bonding configuration; Experimental procedure; Results and discussion.
- Subjects :
- *SILICON carbide
*THIN films
*GLOW discharges
*POLYCRYSTALS
*AMORPHOUS substances
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 71
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7656559
- Full Text :
- https://doi.org/10.1063/1.350561