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CO chemisorption has been studied on TiO2(110) under surface conditions where oxygen anion vacancy sites are not present (oxidized surface), compared to conditions where the vacancy sites are present (annealed surface). The binding energy of CO on the nondefective TiO2(110) surface is 9.9 kcal/mole in the limit of zero coverage. CO...CO repulsive interactions have been observed at higher coverages. When anion vacancy sites are produced under controlled annealing conditions in vacuum at 900 K, a significant increase in the desorption temperature of a portion of the chemisorbed CO is observed. This observation, coupled with measurements showing that defective TiO2(110) does not have enhanced CO chemisorption capacity, suggests that CO adsorbs more strongly on lattice Ti sites in the vicinity of anion vacancy sites. It is postulated that enhanced CO bonding occurs via the interaction of the O moiety of CO with the anion vacancy site while primary adsorbate bonding occurs via the C moiety to Ti lattice sites. Neither CO2 production nor oxygen exchange in CO occurs when CO desorbs from defective TiO2(110). [ABSTRACT FROM AUTHOR]

We have investigated the adsorption and thermal conversion of molecular oxygen (O2) states on the TiO2(110) surface by making use of the distinct photodesorption behavior of each adsorption state. Oxygen chemisorbs at the oxygen vacancy defect sites on the annealed TiO2(110) surface at 105 K to a saturation coverage of less than 0.12 monolayers (ML), producing mostly the α-O2 species which is observed to undergo slow photodesorption. Upon heating this surface to above 250 K, the α-O2 is converted to the β-O2 state which can photodesorb at a significantly higher rate. The β-O2 species dissociates above 400 K to produce atomic oxygen, eliminating the oxygen anionic vacancies. Both the α- and β-photodesorption processes have a threshold energy at the TiO2 band gap (3.1 eV), indicating a substrate excitation mediated process. The photodesorption time-profile is fitted with an exponential decay function with a cross section of ∼8×10-17 cm2 for the α-O2 and ∼1.5×10-15 cm2 for the β-O2 species at a photon energy of 3.94 eV. © 1995 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We have used multiple internal reflection infrared spectroscopy to investigate the interaction of digermane with Ge(111) at temperatures between 104–600 K. Digermane predominantly adsorbs molecularly on the surface below 120 K, displaying a vibrational spectrum similar to that of condensed digermane. At temperatures between 120–150 K, digermane dissociates via Ge–Ge bond scission to form adsorbed GeH3. Chemisorbed germyl GeH3 has a distinct symmetric deformation vibration at ∼772 cm-1, compared to a value of 721 cm-1 for molecularly adsorbed Ge2H6. At 200 K, Ge2H6 adsorption produces surface GeH3, GeH2, and GeH species with stretching vibrations at 2063, 2023, and 1968 cm-1, respectively. The surface GeH2 species is also identified by a characteristic scissor mode at ∼830 cm-1. Adsorption at 300 and 400 K produces only GeH2 and GeH, with a much lower concentration of GeH2 at 400 K. The surface GeH2 and GeH species are also generated by the successive decomposition of GeH3 upon heating. All surface hydrogen desorbs at ∼600 K. [ABSTRACT FROM AUTHOR]

Studies the adsorption and reaction of tetraethoxysilane with hydroxylated silicon oxide using transmission infrared spectroscopy. Importance of dielectric thin films; Methodology of the study; Discussion on the result of the study.