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Mechanistic studies of dielectric thin film growth by low pressure chemical vapor deposition: The reaction of tetraethoxysilane with SiO2 surfaces.
- Source :
-
Journal of Applied Physics . 5/15/1991, Vol. 69 Issue 10, p7037. 13p. - Publication Year :
- 1991
-
Abstract
- Studies the adsorption and reaction of tetraethoxysilane with hydroxylated silicon oxide using transmission infrared spectroscopy. Importance of dielectric thin films; Methodology of the study; Discussion on the result of the study.
- Subjects :
- *ADSORPTION (Chemistry)
*SILICON oxide
*THIN films
*INFRARED spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654489
- Full Text :
- https://doi.org/10.1063/1.348932