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Summary The scalable preparation of high-purity monolayers is essential for practically integrating two-dimensional (2D) semiconductors in diverse technologies but remains a persistent challenge. Previous efforts to exfoliate 2D layered crystals by the organic ammonium intercalation usually produce few-layer nanosheets owing to a self-retarding effect that hinders the complete intercalation in neighboring layers. Herein, we report a unique “intercalation and separation” chemistry with a constant self-refreshing crystal surface that mitigates the self-retarding effect to ensure a complete intercalation of the bulk crystal, ultimately enabling high-yield solution-phase exfoliation of 2D semiconductor monolayers in excellent purity (e.g., monolayer purity of >95% for In2Se3 and InSe). Furthermore, we have assembled large-area organic/inorganic hybrid superlattices with diverse organic molecules and inorganic 2D monolayer crystals, thus creating a family of artificial superlattice materials with atomically modulated chemical compositions, widely tunable superlattice periodicities, and specifically tailorable electronic and thermal properties.

Two-dimensional (2D) PtSe2 has emerged as a promising ultrathin electrocatalyst due to its excellent catalytic activity and conductivity. However, the PtSe2 basal plane is inert for the hydrogen evolution reaction (HER), which greatly limits its electrocatalytic performance. Here, in light of theoretical calculations, we designed a facile approach for activating the 2D PtSe2 basal plane for the HER by simultaneously introducing atomic vacancies of Se, Pt, and Pt clusters through a mild Ar plasma treatment. We tracked changes in the structures and catalytic performance of PtSe2 by combining microscopic imaging, spectroscopic mapping, and electrochemical measurements in microcells. The highest performance of the activated PtSe2 basal plane that we obtained was superior to those of other 2D transition metal dichalcogenide-based electrocatalysts measured in microcells in terms of the overpotential, the Tafel slope, and the exchange current density. This study demonstrates the great potential of activated 2D PtSe2 as an ultrathin catalyst for the HER and provides new insights on the rational design of 2D electrocatalysts.

Crystal defects affect the thermal and heat-transport properties of materials by scattering phonons and modifying phonon spectra1–8. To appreciate how imperfections in solids influence thermal conductivity and diffusivity, it is thus essential to understand phonon–defect interactions. Sophisticated theories are available to explore such interactions, but experimental validation is limited because most phonon-detecting spectroscopic methods do not reach the high spatial resolution needed to resolve local vibrational spectra near individual defects. Here we demonstrate that space- and angle-resolved vibrational spectroscopy in a transmission electron microscope makes it possible to map the vibrational spectra of individual crystal defects. We detect a red shift of several millielectronvolts in the energy of acoustic vibration modes near a single stacking fault in cubic silicon carbide, together with substantial changes in their intensity, and find that these changes are confined to within a few nanometres of the stacking fault. These observations illustrate that the capabilities of a state-of-the-art transmission electron microscope open the door to the direct mapping of phonon propagation around defects, which is expected to provide useful guidance for engineering the thermal properties of materials. State-of-the-art electron energy-loss spectroscopy in a transmission electron microscope maps the detailed phonon spectra of single defects in silicon carbide

Renewable electricity-driven water splitting provides a pathway to manufacturing hydrogen as a promising alternative to fossil fuels. A typical water electrolysis device is comprised of a cathodic hydrogen evolution reaction (HER) and an anodic oxygen evolution reaction (OER). Unfortunately, the OER consumes most of the overall electricity supply while generating negligible economic value, which inhibits the large-scale deployment of the water electrolysis technology. Here, we explored alternatives to the OER and demonstrated that electrooxidation of glycerol (a cheap byproduct of biodiesel and soap production) could lower anodic electricity consumption by up to 0.27 V while producing high-value formic acid with 96.2% faradaic efficiency (FE). Further, glycerol electrooxidation was combined with the photoelectrochemical HER to diminish the electricity requirement to 1.15 V, reducing the electricity consumption by ∼30% relative to typical water electrolysis. This study suggests that solar-assisted co-electrolysis of high-volume block chemicals and water may be an energy efficient and economically viable strategy to realize the sustainable production of value-added chemicals and hydrogen energy.

Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest1–4. However, most vdWHs reported so far are created by an arduous micromechanical exfoliation and manual restacking process5, which—although versatile for proof-of-concept demonstrations6–16 and fundamental studies17–30—is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transition-metal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe2/WSe2, NiTe2/WSe2, CoTe2/WSe2, NbTe2/WSe2, VS2/WSe2, VSe2/MoS2 and VSe2/WS2. Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moire superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to high-performance devices. A general strategy for the synthesis of two-dimensional van der Waals heterostructure arrays is used to produce high-performance electronic devices, showing the potential of this scalable approach for practical technologies.

La2Ti1.96V0.04O7 (LTVO) ceramics with Ti4+ ions partially substituted by V5+ ions at B sites show excellent electrical properties. The dopant V5+ ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO6 oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti4+ ions by V5+ ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La2Ti2O7 (LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 106 Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 105 Ω cm). The substitution of Ti4+ ions by V5+ ions greatly enhances the piezoelectric coefficient, d33 = 4.8 pC/N. Therefore, the doping of V5+ ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes.

The distribution of charge density in materials dictates their chemical bonding, electronic transport, and optical and mechanical properties. Indirectly measuring the charge density of bulk materials is possible through X-ray or electron diffraction techniques by fitting their structure factors1-3, but only if the sample is perfectly homogeneous within the area illuminated by the beam. Meanwhile, scanning tunnelling microscopy and atomic force microscopy enable us to see chemical bonds, but only on the surface4-6. It remains a challenge to resolve charge density in nanostructures and functional materials with imperfect crystalline structures-such as those with defects, interfaces or boundaries at which new physics emerges. Here we describe the development of a real-space imaging technique that can directly map the local charge density of crystalline materials with sub-angstrom resolution, using scanning transmission electron microscopy alongside an angle-resolved pixellated fast-electron detector. Using this technique, we image the interfacial charge distribution and ferroelectric polarization in a SrTiO3/BiFeO3 heterojunction in four dimensions, and discover charge accumulation at the interface that is induced by the penetration of the polarization field of BiFeO3. We validate this finding through side-by-side comparison with density functional theory calculations. Our charge-density imaging method advances electron microscopy from detecting atoms to imaging electron distributions, providing a new way of studying local bonding in crystalline solids.

Measuring temperature in nanoscale is crucial for the research and development of microelectronic devices. Plasmon resonance has been utilized to map local temperature gradient in metallic materials (Al) due to their large coefficients of thermal expansion. However, most semiconductors (including Si and SiC) possess much smaller coefficients of thermal expansion due to their strong covalent bonding in crystal structure, for which the plasmon-based temperature measurement becomes unreliable. Here, we report an unexpected strong, thermally induced phonon energy shift in SiC by spatially resolved vibrational spectroscopy in transmission electron microscopy with in situ heating, demonstrating that this shift can be applied as a useful tool for measuring nanoscale temperature. When a bulk phonon spectrum is used, the spatial resolution of vibrational spectroscopy can be as high as one nanometer. Molecular dynamics simulations reveal that lattice expansion only contributes a small fraction of phonon energy shift and that vibrant motions away from the bonds are predominate factors. This study gains deeper insight into the understanding of dynamic behaviors of the phonon and provides a new avenue to measure local temperature in nanodevices.

The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will open the door to correlate structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.

1T-MoS2 and single-atom modified analogues represent a highly promising class of low-cost catalysts for hydrogen evolution reaction (HER). However, the role of single atoms, either as active species or promoters, remains vague despite its essentiality toward more efficient HER. In this work, we report the unambiguous identification of Ni single atom as key active sites in the basal plane of 1T-MoS2 (Ni@1T-MoS2) that result in efficient HER performance. The intermediate structure of this Ni active site under catalytic conditions was captured by in situ X-ray absorption spectroscopy, where a reversible metallic Ni species (Ni0) is observed in alkaline conditions whereas Ni remains in its local structure under acidic conditions. These insights provide crucial mechanistic understanding of Ni@1T-MoS2 HER electrocatalysts and suggest that the understanding gained from such in situ studies is necessary toward the development of highly efficient single-atom decorated 1T-MoS2 electrocatalysts. While single atom catalysis combines heterogeneous materials with molecular understanding, the role of the single atoms remains vague. Here, authors examine single Ni on MoS2 via in situ X-ray absorption spectroscopy to reveal the intermediate and catalytically active species.

Two-dimensional (2D) materials1,2 and the associated van der Waals (vdW) heterostructures3-7 have provided great flexibility for integrating distinct atomic layers beyond the traditional limits of lattice-matching requirements, through layer-by-layer mechanical restacking or sequential synthesis. However, the 2D vdW heterostructures explored so far have been usually limited to relatively simple heterostructures with a small number of blocks8-18. The preparation of high-order vdW superlattices with larger number of alternating units is exponentially more difficult, owing to the limited yield and material damage associated with each sequential restacking or synthesis step8-29. Here we report a straightforward approach to realizing high-order vdW superlattices by rolling up vdW heterostructures. We show that a capillary-force-driven rolling-up process can be used to delaminate synthetic SnS2/WSe2 vdW heterostructures from the growth substrate and produce SnS2/WSe2 roll-ups with alternating monolayers of WSe2 and SnS2, thus forming high-order SnS2/WSe2 vdW superlattices. The formation of these superlattices modulates the electronic band structure and the dimensionality, resulting in a transition of the transport characteristics from semiconducting to metallic, from 2D to one-dimensional (1D), with an angle-dependent linear magnetoresistance. This strategy can be extended to create diverse 2D/2D vdW superlattices, more complex 2D/2D/2D vdW superlattices, and beyond-2D materials, including three-dimensional (3D) thin-film materials and 1D nanowires, to generate mixed-dimensional vdW superlattices, such as 3D/2D, 3D/2D/2D, 1D/2D and 1D/3D/2D vdW superlattices. This study demonstrates a general approach to producing high-order vdW superlattices with widely variable material compositions, dimensions, chirality and topology, and defines a rich material platform for both fundamental studies and technological applications.

The use of a computation-guided method and the discovered structure–property relationship would establish a rational strategy to aid the development of ethanol oxidation reaction (EOR) catalysts for possible commercialization of direct ethanol fuel cells. Here, we investigate the promotion roles of additive metals in ternary Pt–Sn–Ag catalysts toward EOR via a combination of density functional theory calculation and experimental evidence. By calculating the EOR energetics, the promotion roles of Sn and Ag were revealed from the viewpoints of electronic and structural effects, respectively: (1) The addition of Sn and Ag on Pt essentially reduce the reaction energy and activation barrier of the second two-electron transfer process of EOR, facilitating the oxidation of acetaldehyde to acetic acid; (2) a homogeneous Pt–Sn–Ag surface configuration strengthens the adsorption energy of ethanol, thus improving the activity for ethanol oxidizing to acetaldehyde. Experimentally, various Pt–Sn–Ag nanorod catalysts ...

Heterogeneous catalysts with atomically defined active centers hold great promise for high-performance applications. Among them, catalysts featuring active moieties with more than one metal atom are important for chemical reactions that require synergistic effects but are rarer than single atom catalysts (SACs). The difficulty in synthesizing such catalysts has been a key challenge. Recent progress in preparing dinuclear heterogeneous catalysts (DHCs) from homogeneous molecular precursors has provided an effective route to address this challenge. Nevertheless, only side-on bound DHCs, where both metal atoms are affixed to the supporting substrate, have been reported. The competing end-on binding mode, where only one metal atom is attached to the substrate and the other metal atom is dangling, has been missing. Here, we report the first observation that end-on binding is indeed possible for Ir DHCs supported on WO3. Unambiguous evidence supporting the binding mode was obtained by in situ diffuse reflectanc...

The atomic thin, vertically-stacked 2H-MoTe2/MoS2 heterostructures are successfully synthesized using the single step chemical vapor deposition (CVD) method and a magnet-assisted secondary precursor delivery tool. The second material (MoTe2) was grown in a well-controlled, unique and epitaxial 2H-stacking mode atop the first material (MoS2), starting from the edges. This led to the construction of a vertical p-n junction with a broadband photoresponse from the ultraviolet (UV, 200 nm) to the near-infrared (IR, 1100 nm) regions. The high crystallinity of MoTe2/MoS2 heterostructures with a modulation of sulfur and tellurium distribution is corroborated by multiple characterization methods, including Raman spectroscopy, photoluminescence (PL) spectroscopy and high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Furthermore, the photoelectrical measurements exhibit a tremendous photoresponsivity with an external quantum efficiency (EQE) as high as 4.71 A/W and 532% at 1100 nm, while as 4.67 A/W and 1935% at 300 nm, one to two orders of magnitude higher than other exfoliated MoTe2 heterostructure devices have been reported so far. This synthetic method is a controllable stacking mode confined synthesis approach for 2D heterostructures, and paves the way for the fabrication of high-performance functional telluride-based broadband photodetectors.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with layered structures provide a unique platform for exploring the effect of number of layers on their fundamental properties. However, the thickness scaling effect on the chemical properties of these materials remains unexplored. Here, we explored the chemically induced phase transition of 2D molybdenum disulfide (MoS2) from both experimental and theoretical aspects and observed that the critical electron injection concentration and the duration required for the phase transition of 2D MoS2 increased with decreasing number of layers. We further revealed that the observed dependence originated from the layer-dependent density of states of 2H-MoS2, which results in decreasing phase stability for 2H-MoS2 with increasing number of layers upon electron doping. Also, the much larger energy barrier for the phase transition of monolayer MoS2 induces the longer reaction time required for monolayer MoS2 as compared to multilayer MoS2. The layer-dependen...

For wide application of metal-air batteries, the key factor is the development of catalysts for air cathodes. In the present study, PdCo/C bimetallic nanocatalysts are prepared by a facile borohydride reduction method. To improve the activity and stability, the catalysts are heat-treated at 200 °C in H2/Ar atmosphere from 4 h to 24 h. The optimal heat-treatment time is found to be 8 h, at which the highest activity for both oxygen reduction reaction and oxygen evolution reaction is obtained. With the 8 h heat-treated PdCo/C catalyst, the rechargeable zinc-air battery exhibits a high power density of 180 mW cm−2 and retains stability for more than 50 h at a discharge-charge current density of 10 mA cm−2, while the magnesium-air battery obtains a power density of more than 200 mW cm−2 and remains stable within 8 h at a discharge current density of 65 mA cm−2.

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc around 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on 1) a 2D Tinkham description of the angle-dependent upper critical field, 2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity., Comment: 18 pages, 4 figures, accepted by Nano Letters

Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.

Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO3 and PbZr0.2Ti0.8O3. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures.

Since catalytic performance of platinum-metal (Pt-M) nanoparticles is primarily determined by the chemical and structural configurations of the outermost atomic layers, detailed knowledge of the distribution of Pt and M surface atoms is crucial for the design of Pt-M electrocatalysts with optimum activity. Further, an understanding of how the surface composition and structure of electrocatalysts may be controlled by external means is useful for their efficient production. Here, we report our study of surface composition and the dynamics involved in facet-dependent oxidation of equilibrium-shaped Pt3Co nanoparticles in an initially disordered state via in situ transmission electron microscopy and density functional calculations. In brief, using our advanced in situ gas cell technique, evolution of the surface of the Pt3Co nanoparticles was monitored at the atomic scale during their exposure to an oxygen atmosphere at elevated temperature, and it was found that Co segregation and oxidation take place on {111} surfaces but not on {100} surfaces.

Colloidal nanocrystals of lead halide perovskites have recently received great attention due to their remarkable performance in optoelectronic applications (e.g., light-emitting devices, flexible electronics, and photodetectors). However, the use of lead remains of great concern due to its toxicity and bioaccumulation in the ecosystem; herein we report a strategy to address this issue by using tetravalent tin (Sn4+) instead of divalent lead (Pb2+) to synthesize stable Cs2SnI6 perovskite nanocrystals. The shapes of as-synthesized Cs2SnI6 nanocrystals are tuned from spherical quantum dots, nanorods, nanowires, and nanobelts to nanoplatelets via a facile hot-injection process using inexpensive and nontoxic commercial precursors. Spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM) and simulation studies revealed a well-defined face-centered-cubic (fcc) perovskite derivative structure of Cs2SnI6 nanocrystals. The solution-processed Cs2SnI6 nanocrystal-based field effect...

Ferroelectric heterostructures, with capability of storing data at ultrahigh densities, could act as the platform for next-generation memories. The development of new device paradigms has been hampered by the long-standing notion of inevitable ferroelectricity suppression under reduced dimensions. Despite recent experimental observation of stable polarized states in ferroelectric ultrathin films, the out-of-plane polarization components in these films are strongly attenuated compared to thicker films, implying a degradation of device performance in electronic miniaturization processes. Here, in a model system of BiFeO3/La0.7Sr0.3MnO3, we report observation of a dramatic out-of-plane polarization enhancement that occurs with decreasing film thickness. Our electron microscopy analysis coupled with phase-field simulations reveals a polarization-enhancement mechanism that is dominated by the accumulation of oxygen vacancies at interfacial layers. The results shed light on the interplay between polarization and defects in nanoscale ferroelectrics and suggest a route to enhance functionality in oxide devices.

The drive for atom efficient catalysts with carefully controlled properties has motivated the development of single atom catalysts (SACs), aided by a variety of synthetic methods, characterization techniques, and computational modeling. The distinct capabilities of SACs for oxidation, hydrogenation, and electrocatalytic reactions have led to the optimization of activity and selectivity through composition variation. However, characterization methods such as infrared and X-ray spectroscopy are incapable of direct observations at atomic scale. Advances in transmission electron microscopy (TEM) including aberration correction, monochromators, environmental TEM, and micro-electro-mechanical system based in situ holders have improved catalysis study, allowing researchers to peer into regimes previously unavailable, observing critical structural and chemical information at atomic scale. This review presents recent development and applications of TEM techniques to garner information about the location, bonding characteristics, homogeneity, and stability of SACs. Aberration corrected TEM imaging routinely achieves sub-Ångstrom resolution to reveal the atomic structure of materials. TEM spectroscopy provides complementary information about local composition, chemical bonding, electronic properties, and atomic/molecular vibration with superior spatial resolution. In situ/operando TEM directly observe the evolution of SACs under reaction conditions. This review concludes with remarks on the challenges and opportunities for further development of TEM to study SACs.

Here, pyridinic nitrogen dominated graphene aerogels with/without iron incorporation (Fe-NG and NG) are prepared via a facile and effective process including freeze-drying of chemically reduced graphene oxide with/without iron precursor and thermal treatment in NH3. A high doping level of nitrogen has been achieved (up to 12.2 at% for NG and 11.3 at% for Fe-NG) with striking enrichment of pyridinic nitrogen (up to 90.4% of the total nitrogen content for NG, and 82.4% for Fe-NG). It is found that the Fe-NG catalysts display a more positive onset potential, higher current density, and better four-electron selectivity for ORR than their counterpart without iron incorporation. The most active Fe-NG exhibits outstanding ORR catalytic activity, high durability, and methanol tolerance ability that are comparable to or even superior to those of the commercial Pt/C catalyst at the same catalyst loading in alkaline environment. The excellent ORR performance can be ascribed to the synergistic effect of pyridinic N and Fe-N x sites (where iron probably coordinates with pyridinic N) that serve as active centers for ORR. Our Fe-NG can be developed into cost-effective and durable catalysts as viable replacements of the expensive Pt-based catalysts in practical fuel cell applications.

Direct methanol fuel cells (DMFCs) have been recognized as a promising type of power sources to solve the energy shortage and environmental pollution from fossil energy consumption. However, their commercialization is still hindered by two major problems, the high cost of Pt-based catalysts and the crossover of methanol from anodes to cathodes. In the second problem, the methanol molecules can poison the Pt-based catalysts and lower the cell voltages by reacting with oxygen. Fe-based catalysts containing Fe–N–C active sites are well known as low-cost candidates that are promising to replace the Pt-based. But they cannot prevent the methanol molecules from reacting with oxygen. For the first time, we discovers a new enhancement of the electrocatalysis of Fe–N–C nanofiber catalysts induced by a synergy of methanol and oxygen-containing groups in the catalysts. Its mechanism is revealed by first-principles calculations of density functional theory and then proven experimentally. More significantly, the synergy-induced enhancement (SIE) is further improved experimentally by 40.8 times and reaches 21.60±0.05%. This indicates that the SIE has an enormous upside potential. Moreover, the methanol molecules in the SIE react with not oxygen but epoxy, reducing the harm of the reaction of methanol and oxygen in DMFCs. Further, the SIE has been employed in fuel cells and realized enhancement of current density by 3.0±0.5% in anion-exchange membrane DMFC and by 5.95±0.07% in H2–O2 anion exchange membrane fuel cell (AEMFC). Therefore, the new SIE can simultaneously solve both of the two problems and thus facilitate the DMFC commercialization for easing the crises of energy and pollution.

Engineering catalytic sites at the atomic level provides an opportunity to understand the catalyst’s active sites, which is vital to the development of improved catalysts. Here we show a reliable and tunable polyoxometalate template-based synthetic strategy to atomically engineer metal doping sites onto metallic 1T-MoS2, using Anderson-type polyoxometalates as precursors. Benefiting from engineering nickel and oxygen atoms, the optimized electrocatalyst shows great enhancement in the hydrogen evolution reaction with a positive onset potential of ~ 0 V and a low overpotential of −46 mV in alkaline electrolyte, comparable to platinum-based catalysts. First-principles calculations reveal co-doping nickel and oxygen into 1T-MoS2 assists the process of water dissociation and hydrogen generation from their intermediate states. This research will expand on the ability to improve the activities of various catalysts by precisely engineering atomic activation sites to achieve significant electronic modulations and improve atomic utilization efficiencies., While heterogeneous catalysts can act as tangible, efficient materials for energy conversion, understanding the active catalytic sites is challenging. Here, authors engineer specific catalytic sites into molybdenum sulfide to improve and elucidate hydrogen evolution electrocatalysis.

A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attributed to the large anisotropic orbital magnetoresistance that stems from the ultrahigh mobility. Furthermore, the mobility-enhanced current jetting effects are found to strongly deform the line shape of the curves, and their evolution with the changing magnetic field and temperature is also studied. Although the giant PHE/AMR suggests promising applications in spintronics, the enhanced current jetting shows the other side of the coin, which needs to be considered in the future device design., Physical Review Materials

Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO3 thin films. These defects are strongly coupled to the domain structures in the pretemperature-change portion of the BiFeO3 film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.

© 2018 National Academy of Sciences. All rights reserved. Atomically dispersed catalysts refer to substrate-supported heterogeneous catalysts featuring one or a few active metal atoms that are separated from one another. They represent an important class of materials ranging from single-atom catalysts (SACs) and nanoparticles (NPs).While SACs and NPs have been extensively reported, catalysts featuring a few atoms with well-defined structures are poorly studied. The difficulty in synthesizing such structures has been a critical challenge. Here we report a facile photochemical method that produces catalytic centers consisting of two Ir metal cations, bridged by O and stably bound to a support. Direct evidence unambiguously supporting the dinuclear nature of the catalysts anchored on α-Fe2O3is obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM). Experimental and computational results further reveal that the threefold hollow binding sites on the OH-terminated surface of α-Fe2O3anchor the catalysts to provide outstanding stability against detachment or aggregation. The resulting catalysts exhibit high activities toward H2O photooxidation.

Coupling between different degrees of freedom, that is, charge, spin, orbital and lattice, is responsible for emergent phenomena in complex oxide heterostrutures1,2. One example is the formation of a two-dimensional electron gas (2DEG) at the polar/non-polar LaAlO3/SrTiO3 (LAO/STO)3-7 interface. This is caused by the polar discontinuity and counteracts the electrostatic potential build-up across the LAO film3. The ferroelectric polarization at a ferroelectric/insulator interface can also give rise to a polar discontinuity8-10. Depending on the polarization orientation, either electrons or holes are transferred to the interface, to form either a 2DEG or two-dimensional hole gas (2DHG)11-13. While recent first-principles modelling predicts the formation of 2DEGs at the ferroelectric/insulator interfaces9,10,12-14, experimental evidence of a ferroelectrically induced interfacial 2DEG remains elusive. Here, we report the emergence of strongly anisotropic polarization-induced conductivity at a ferroelectric/insulator interface, which shows a strong dependence on the polarization orientation. By probing the local conductance and ferroelectric polarization over a cross-section of a BiFeO3-TbScO3 (BFO/TSO) (001) heterostructure, we demonstrate that this interface is conducting along the 109° domain stripes in BFO, whereas it is insulating in the direction perpendicular to these domain stripes. Electron energy-loss spectroscopy and theoretical modelling suggest that the anisotropy of the interfacial conduction is caused by an alternating polarization associated with the ferroelectric domains, producing either electron or hole doping of the BFO/TSO interface.

Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS2. First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion.

Developing controlled approaches for synthesizing high-quality two-dimensional (2D) semiconductors is essential for their practical applications in novel electronics. The application of chemical vapor transport (CVT), an old single-crystal growth technique, has been extended from growing 3D crystals to synthesizing 2D atomic layers by tuning the growth kinetics. Both single crystalline individual flakes and continuous films of 1 L MoS2 were successfully obtained with CVT approach at low growth temperatures of 300–600 °C. The obtained 1 L MoS2 exhibits high crystallinity and comparable mobility to mechanically exfoliated samples, as confirmed by both atomic resolution microscopic imaging and electrical transport measurements. Besides MoS2, this method was also used in the growth of 2D WS2, MoSe2, MoxW1−xS2 alloys, and ReS2, thus opening up a new way for the controlled synthesis of various 2D semiconductors.

Ferroelectric domain walls exhibit a number of new functionalities that are not present in their host material. One of these functional characteristics is electrical conductivity that may lead to future device applications. Although progress has been made, the intrinsic conductivity of BiFeO3 domain walls is still elusive. Here, the intrinsic conductivity of 71° and 109° domain walls is reported by probing the local conductance over a cross section of the BiFeO3 /TbScO3 (001) heterostructure. Through a combination of conductive atomic force microscopy, high-resolution electron energy loss spectroscopy, and phase-field simulations, it is found that the 71° domain wall has an inherently charged nature, while the 109° domain wall is close to neutral. Hence, the intrinsic conductivity of the 71° domain walls is an order of magnitude larger than that of the 109° domain walls associated with bound-charge-induced bandgap lowering. Furthermore, the interaction of adjacent 71° domain walls and domain wall curvature leads to a variation of the charge distribution inside the walls, and causes a discontinuity of potential in the [110]p direction, which results in an alternative conductivity of the neighboring 71° domain walls, and a low conductivity of the 71° domain walls when measurement is taken from the film top surface.

Defects can alter the electronic, magnetic and spintronic properties of single- and few-layer MoS2 which are two-dimensional semiconductors with nonzero bandgaps. Here we discover by first-principles calculations with density functional theory that stacking faults with different rotational angles in bilayer MoS2 quantum dots modulate quantitatively the magnetism of the dots and the distributions of the spins and energy levels in their electronic structures. Our results suggest an avenue to design and tailor MoS2 quantum dots for electronics, optoelectronics, magnetics and spintronics.

Core-shell-shell heterostructures of α-NaLuF4:Yb/Er@NaLuF4:Yb@MF2 (M = Ca, Sr, Ba) have been successfully fabricated via the thermal decomposition method. Upconversion nanoparticles (UCNPs) were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), upconversion luminescence (UCL) spectroscopy, etc. Under 980 nm excitation, the emission intensities of the UCNPs are remarkably enhanced after coating the MF2 (M = Ca, Sr, and Ba) shell. Among these samples, CaF2 coated UCNPs show the strongest overall emission, while BaF2 coated UCNPs exhibit the longest lifetime. These results demonstrate that alkaline earth metal fluorides are ideal materials to improve the UCL properties. Meanwhile, although the lattice mismatch between the ternary NaREF4 core and the binary MF2 (M = Sr and Ba) shell is relatively large, the successfully synthesized NaLuF4:Yb/Er@NaLuF4:Yb@MF2 indicates a new outlook on the fabrication of heterostructural core-shell UCNPs.

The controlled synthesis of high-quality multilayer (ML) MoS2 flakes with gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated. These CVD-grown ML MoS2 flakes exhibit much higher mobility and current density than mechanically exfoliated ML flakes due to the reduced contact resistance which mainly resulted from direct contact between the lower MoS2 layers and electrodes.