1. Spin Polarization, Electron–Phonon Coupling, and Zero-Phonon Line of the NV Center in 3C-SiC
- Author
-
Wolf Gero Schmidt, Uwe Gerstmann, J. L. Cantin, Timur Biktagirov, Hans Jürgen von Bardeleben, Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), and University of Paderborn
- Subjects
Phonon ,Bioengineering ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,Spectral line ,Paramagnetism ,silicon carbide ,0103 physical sciences ,resonant excitation ,[CHIM]Chemical Sciences ,General Materials Science ,010306 general physics ,Spectroscopy ,Physics ,Condensed matter physics ,Spin polarization ,Mechanical Engineering ,Resonance ,General Chemistry ,spin polarization ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,nitrogen-vacancy color centers ,Qubit ,Excited state ,electron-phonon coupling ,0210 nano-technology - Abstract
International audience; The nitrogen-vacancy (NV) center in 3C-SiC, the analog of the NV center in diamond, has recently emerged as a solid-state qubit with competitive properties and significant technological advantages. Combining first-principles calculations and magnetic resonance spectroscopy we provide thorough insight in its magneto-optical properties. By applying resonantly excited electron paramagnetic resonance spectroscopy, we identified the zero-phonon absorption line of the 3 A 2 → 3 E transition at 1289 nm (within the telecom Oband) and measured its phonon sideband, the analysis of which reveals a Huang-Rhys factor of S = 2.85 and a Debye-Waller factor of 5.8 %. The low temperature spin-lattice relaxation time was found to be exceptionally long (T 1 = 17 s at 4 K). All these properties make NV in 3C-SiC a strong competitor for qubit application. In addition, the strong variation of the zero-field splitting in the range of 4K to 380K allows its application for nanoscale thermal sensing.
- Published
- 2021