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Magnetic nanoparticles of Fe3O4 doped by different amounts of Y3+ (0, 0.1, 1, and 10%) ions were designed to obtain maximum heating efficiency in magnetic hyperthermia for cancer treatment. Single-phase formation was evident by X-ray diffraction measurements. An improved magnetization value was obtained for the Fe3O4 sample with 1% Y3+ doping. The specific absorption rate (SAR) and intrinsic loss of power (ILP) values for prepared colloids were obtained in water. The best results were estimated for Fe3O4 with 0.1% Y3+ ions (SAR = 194 W/g and ILP = 1.85 nHm2/kg for a magnetic field of 16 kA/m with the frequency of 413 kHz). The excellent biocompatibility with low cell cytotoxicity of Fe3O4:Y nanoparticles was observed. Immediately after magnetic hyperthermia treatment with Fe3O4:0.1%Y, a decrease in 4T1 cells’ viability was observed (77% for 35 μg/mL and 68% for 100 μg/mL). These results suggest that nanoparticles of Fe3O4 doped by Y3+ ions are suitable for biomedical applications, especially for hyperthermia treatment.

Composite, helical nanostructures formed using cooperative interactions of liquid crystals and Au nanoparticles were studied using a scanning transmission electron microscopy (STEM) mode. The investigated helical assemblies exhibit long-range hierarchical order across length scales, as a result of the crystallization (freezing) directed growth mechanism of nanoparticle-coated twisted nanoribbons and their ability to form organized bundles. Here, STEM methods were used to reproduce the 3D structure of the Au nanoparticle double helix.

Computed tomography (CT) of aluminum welded joint specimen has been performed. On the tomographic cross sections some defects have been found. To verify them the metallography cross sections of welded has been done. It was found that selected defects are micro cracks.

Multi-level exciton-polariton systems offer an attractive platform for studies of non-linear optical phenomena. However, studies of such consequential non-linear phenomena as polariton condensation and lasing in planar microcavities have so far been limited to two-level systems, where the condensation takes place in the lowest attainable state. Here, we report non-equilibrium Bose-Einstein condensation of exciton-polaritons and low threshold, dual-wavelength polariton lasing in vertically coupled, double planar microcavities. Moreover, we find that the presence of the non-resonantly driven condensate triggers interbranch exciton-polariton transfer in the form of energy-degenerate parametric scattering. Such an effect has so far been observed only under excitation that is strictly resonant in terms of the energy and incidence angle. We describe theoretically our time-integrated and time-resolved photoluminescence investigations by a set of rate equations involving an open-dissipative Gross-Pitaevskii equation. Our platform's inherent tunability is promising for construction of planar lattices, enabling three-dimensional polariton hopping and realization of photonic devices, such as two-qubit polariton-based logic gates., 8 pages, 5 figures

International audience; Quantum well systems based on semiconductors with the wurtzite crystalline structure have found widespread applications in photonics and optoelectronic devices, such as light-emitting diodes, laser diodes, or single-photon emitters. In these structures, the radiative recombination processes can be affected by (i) the presence of strain and polarization-induced electric fields, (ii) quantum well thickness fluctuations and blurring of a well–barrier interface, and (iii) the presence of dislocations and native point defects (intentional and unintentional impurities). A separate investigation of these phenomena is not straightforward since they give rise to similar effects, such as a decrease of luminescence efficiency and decay rate, enhancement of the Stokes shift, and strong blueshift of the emission with increasing pump intensity. In this Perspective article, we review the usefulness of measurements of the quantum well luminescence as a function of the hydrostatic pressure for both scientific research and the development of light-emitting technologies. The results presented here show that high-pressure investigations combined with ab initio calculations can identify the nature of optical transitions and the main physical factors affecting the radiative efficiency in quantum well systems. Finally, we will discuss an outlook to the further possibilities to gain new knowledge about the nature of recombination processes in quantum wells using high-pressure spectroscopy.

A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3 × 10 19 c m - 3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).

An analysis of the main recombination modes in nitrides, based on new method of data treatment is proposed for the determination of the carrier recombination processes in optically excited matter measured by time-resolved photoluminescence (PL). The analysis includes basic recombination modes: nonradiative Shockley-Read-Hall (SRH), radiative and Auger recombination in relation to monomolecular, bi-molecular, and tri-molecular processes of optical relaxation. The method is based on the introduction of instantaneous PL decay rate r P L plotted as a function of the PL intensity or of the time. Such an approach provides deep insight into the time evolution of the recombination of the optically excited semiconductor systems and can be applied to the time evolution of a variety of optically excited systems. The demonstration of its strength is given by the application to III-nitride based systems, including nitride highly doped and semi-insulating thick layers, polar and non-polar multi-quantum wells (MQWs). At low temperatures (5 K), the mono- and bi-molecular processes determine the carrier relaxation, and the tri-molecular Auger recombination contribution is negligible. At room temperature the data indicate an important contribution of Auger processes. It is also shown that asymptotic (low excitation), one-exponential recombination rate has different character depending on the presence of the electric fields across the structure.

Coupling of quantum emitters in a semiconductor relies, generally, on short-range dipole-dipole or electronic exchange type interactions. Consistently, energy transfer between exciton states, that is, electron-hole pairs bound by Coulomb interaction, is limited to distances of the order of 10~nm. Here, we demonstrate polariton-mediated coupling and energy transfer between excitonic states over a distance exceeding 2~$\mu$m. We accomplish this by coupling quantum well-confined excitons through the delocalized mode of two coupled optical microcavities. Use of magnetically doped quantum wells enables us to tune the confined exciton energy by the magnetic field and in this way to control the spatial direction of the transfer. Such controlled, long-distance interaction between coherently coupled quantum emitters opens possibilities of a scalable implementation of quantum networks and quantum simulators based on solid-state, multi-cavity systems., Comment: 4 figures

This study describes the facile synthesis of ZnO nanolayers by the sol-gel process and evaluates their subsequent surface passivation with ZnS by gas-phase sulfidation. The ZnO nanolayers were formed by a spin-coating technique following calcination in air in the temperature range 500–900 °C to obtain a polycrystalline wurtzite structure of ZnO. The layer thickness was optimized by adjusting the spin-coating speed and concentration of polymer in the starting solution. The continuity and formation of the films was influenced by ZnO crystal size, which was found to increase with increasing calcination temperature. The ZnO nanostructure was covered by a thin ZnS layer in a one-step passivation process carried out at room temperature in the presence of H 2 S. This thin coating of ZnS was found to have a sphalerite structure. The cathodoluminescence intensity of near-band-gap emission of the coated crystal was one order of magnitude greater following the passivation of surface defects.

Water-soluble upconversion nanoparticles (UCNPs), based on polyvinylpyrrolidone (PVP)-coated NaYF4:Er3+,Yb3+,Gd3+, with various concentrations of Gd3+ ions and relatively high upconversion efficiencies, were synthesized. The internalization and cytotoxicity of the thus obtained UCNPs were evaluated in three cell lines (HeLa, HEK293 and astrocytes). No cytotoxicity was observed even at concentrations of UCNPs up to 50 μg ml-1. The fate of the UCNPs within the cells was studied by examining their upconversion emission spectra with confocal microscopy and confirming these observations with transmission electron microscopy. It was found that the cellular uptake of the UCNPs occurred primarily by clathrin-mediated endocytosis, whereas they were secreted from the cells via lysosomal exocytosis. The results of this study, focused on the mechanisms of the cellular uptake, localization and secretion of UCNPs, demonstrate, for the first time, the co-localization of UCNPs within discrete cell organelles.

Electron paramagnetic resonance was used to investigate Mn impurity in Bi 2 Se 3 topological insulator grown by the vertical Bridgman method. Mn in high-spin S =5/2, Mn 2+ , configuration was detected regardless of the conductivity type of the host material. This means that Mn 2+ (d 5 ) energy level is located within the valence band, and Mn 1+ (d 6 ) energy level is outside the energy gap of Bi 2 Se 3 . The electron paramagnetic resonance spectrum of Mn 2+ in Bi 2 Se 3 is characterized by the isotropic g-factor | g |=1.91 and large axial parameter D =−4.20 GHz h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz h and 16.8 GHz h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi 2 Se 3 acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity. However, Mn-doping simultaneously favors formation of native donor defects, most probably selenium vacancies. For high Mn-doping it may lead to the resultant n-type conductivity related with strong non-stoichiometry and degradation of the crystal structure - switching from Bi 2 Se 3 to BiSe phase.

Sono- and photochemical reactions were combined in the synthesis of Pd-Fe- and Pt-Fe-doped titania-based photocatalysts supported on zeolite Y. In the applied procedure, no harmful reducing agents were used. The resulting photocatalysts were characterized using diffuse reflectance UV–vis spectroscopy, high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), N 2 physisorption and inductively coupled plasma mass spectrometry (ICP-MS) techniques. The applied methodology leads to the formation of a mainly metallic form of platinum and oxidized forms of palladium and iron, with respect to different reduction potentials of metals. The photocatalytic degradation of phenol under UV light was applied as a test reaction. The photocatalyst containing Pt-Fe showed better results in this reaction in comparison with the Pd-Fe material, mainly because of the presence of the metallic form of platinum.

Lasing relies on light amplification in the active medium of an optical resonator. There are three lasing regimes in the emission from a quantum well coupled to a semiconductor microcavity. Polariton lasing in the strong light–matter coupling regime arises from the stimulated scattering of exciton-polaritons. Photon lasing in the weak coupling regime relies on either of two mechanisms: the stimulated recombination of excitons, or of an electron–hole plasma. So far, only one or two out of these three regimes have been reported for a given structure, independently of the material system studied. Here, we report on all three lasing regimes and provide evidence for a three-threshold behavior in the emission from a photonic trap in a Se/Te-based planar microcavity comprising a single CdSe/(Cd,Mg)Se quantum well. Our work establishes the so far unsettled relation between lasing regimes that differ by their light-matter coupling strength and degree of electron–hole Coulomb correlation. Semiconductor microcavities coupled to a quantum well can produce three regimes of coherent light generation depending on the nature of the light–matter and electron–hole interactions. The authors design a Se/Te based microcavity containing a single quantum well which enables them to achieve all three lasing regimes in the one device.

Gd2O3:1% Er3+, 18% Yb3+, x% Mg2+ (x = 0; 2.5; 4; 5; 6; 8;10; 20; 25; 50) and Gd2O3:1% Er3+, 18% Yb3+, 2,5% Mg2+, y% Li+ (y = 0.5–2.5) nanoparticles were synthesized by homogenous precipitation method and calcined at 900 °C for 3 h in air atmosphere. Powder x-ray diffraction, scanning electron microscopy, cathodoluminescence, transmission electron microscopy, energy dispersive x-ray spectroscopy and photoluminescence techniques were employed to characterize the obtained nanoparticles. We observed a 8-fold increase in red luminescence for samples suspended in DMSO solution for 2.5% of Mg2+ doping. The x-ray analysis shows that for the concentration of 2.5% Mg, the size of the crystallites in the NPs is the largest, which is mainly responsible for the increase in the intensity of the upconversion luminescence. But the addition of Li+ ions did not improve the luminescence of the upconversion due to decreasing of crystallites size of the NPs. Synthesized nanomaterials with very effective upconverting luminescence, can act as luminescent markers in in vivo imaging. The cytotoxicity of the nanoparticles was evaluated on the 4T1 cell line for the first time.

The effect of the ZnO nanoparticles (NPs) size on the photocatalytic degradation of phenol in a water solution under the influence of UV and Vis radiation was discussed. For the first time, research on photocatalytic degradation has used ZnO NPs produced by only one method (microwave solvothermal synthesis without heat treatment or other processes of reduction/oxidisation of the surface of NPs samples). ZnO NPs average size was determined using the Scherrer's formula, Nanopowder XRD Processor Demo web application, by converting the results of the specific surface area-density, and TEM tests. The ZnO NPs (average size between 23 nm and 71 nm) characterise by uniform morphology and narrow size distribution. The photocatalytic performance of ZnO NPs increases with the increase of the particle size and the decrease of the specific surface area. For both UV and Vis radiation, the highest reaction rate for phenol degradation was found for ZnO sample with the average particle size of 71 nm. Low concentrations of resorcine and hydroquinone (co-products of phenol degradation) were found for UV light photocatalytic test. However, high concentrations of hydro- and p-benzoquinone were observed for visible light photoactivity due to the slower decomposition of the main contamination associated with the utilized of other type of radiation. The photocatalytic activity was found to be attributable to the decrease in the charge carrier recombination rate.

The structural, electronic, and magnetic properties of low-energy rhenium implanted c-Si are examined for the first time. The damage created by rhenium ions and the following partial reconstruction of the silicon host matrix after rapid thermal annealing (RTA) are investigated as a function of the fluence. Rutherford backscattering spectrometry (RBS) results reveal that the implanted ions are located in the near-surface region with the distribution maximum at about 23 nm below the surface. The analysis of rhenium-depth distribution using the McChasy code shows that the implanted Re-ions are located in the interstitial lattice positions. The RTA leads to a partial recovery of the silicon crystal structure. According to the RBS results, the formed inclusions are not coherent with the silicon host matrix causing an increase of the lattice distortion. Analysis of channeled RBS/c spectra carried out by the McChasy code revealed different levels of bent channels in damaged regions suggesting bimodal distribution of inclusions in the silicon. Studies of high-resolution X-ray photoelectron spectroscopy (XPS) conducted after the RTA showed the shift of Re 4f7/2 binding energy (BE) by +0.68 and + 0.85 eV with respect to metallic rhenium for the samples with lower/higher fluencies, respectively. Complex XPS, density functional theory (DFT) simulations, and transmission electron microscopy (TEM) data analysis allowed us to conclude that the near-surface layer of the sample (∼10 nm) consists of nanoinclusions with cubic and/or hexagonal ReSi. In the middle area of the samples, much larger nanoinclusions (>10/20 nm for higher/lower fluencies, respectively) containing pure metallic rhenium inside are formed. The RTA increases the magnetic moment of the sample with the lower dose nearly 20-fold, whereas in the sample with the higher dose a 3-fold increment is observed only. The magnetic response of the examined systems after the RTA indicates a presence of magnetic interactions between the nanoinclusions resulting in the system exhibiting super-spin glass or super-ferromagnetism.

In photodynamic therapy (PDT), photosensitizer (PS) molecules are irradiated by light to generate reactive oxygen species (ROS), the presence of which subsequently leads to cell death. At present, the modality is limited to the treatment of skin diseases because of the low tissue penetration of visible or ultraviolet light required for producing ROS. To increase tissue penetration and extend the therapeutic possibilities of PDT to the treatment of deep-seated cancer, rare-earth doped nanoparticles capable of up-converting infrared to visible light are investigated. These up-converting nanoparticles (UCNPs) are conjugated with PS molecules to efficiently generate ROS. In this work, we employ hexagonal β-NaYF4:Yb3 + ,Er3 + as UCNPs and Rose Bengal (RB) as PS molecules and demonstrate efficient in vitro PDT using this nanoformulation. Covalent bonding of the RB molecules is accomplished without their functionalization-an approach which is expected to increase the efficiency of ROS generation by 30%. Spectroscopic studies reveal that our approach results in UCNP surface fully covered with RB molecules. The energy transfer from UCNPs to RB is predominantly non-radiative as evidenced by luminescence lifetime measurements. As a result, ROS are generated as efficiently as under visible light illumination. The in vitro PDT is tested on murine breast 4T1 cancer cells incubated with 250 µg ml-1 of the nanoparticles and irradiated with NIR light under power density of 2 W cm-2 for 10 minutes. After 24 hours, the cell viability decreased to 33% demonstrating a very good treatment efficiency. These results are expected to simplify the protocols for preparation of the PDT agents and lead to improved therapeutic effects.

Commercial TiO2 (P25), alone or in the presence of graphite oxide (GO), was exposed to ultrasound treatment (US) with the objective to modify the surface of nanoparticles through introducing defects and chemical heterogeneity, and to build the composite with GO of synergistic features. The obtained materials were extensively characterized using XRD, HR-TEM, TA-MS, FTIR, XPS, potentiometric titration, adsorption of nitrogen, and UV/Vis diffuse reflectance techniques. The results showed that the US treatment/activation led to the formation of defects on the surface of the TiO2 nanoparticles, which were associated with an increase in the amount of terminal hydroxy groups, and which resulted in narrowing of the band gap energy. The composite formed upon the ultrasonic activation contained partially reduced GO particles deposited on the surface of TiO2 aggregates and bonded with the titania phase through its carboxylic groups existing at the edges of small defectous graphene particles, leading to a high volume of mesopores formed between the particles/aggregates of the nanoparticles. The US-treated materials showed a superior bifunctional detoxification performance, to adsorb and photocatalytically decompose vapors of a chemical warfare agent surrogate, as a result of the surface alteration/activation and an increase in the porosity.

We report on the binding energy of a charged exciton (trion) confined in a single, epitaxially grown 1.7 nm thick ZnO/(Zn,Mg)O quantum well as large as 22 meV or 27.6 meV when determined in micro-photoluminescence or transmission measurements, respectively. Charged exciton emission is found to persist up to near room temperature. The binding energy comparable to thermal energy at room temperature is promising for trion based spintronic and optoelectronic applications.

Studies of internal electric fields in GaN/AlxGa1-xN (3 nm/4 nm) multi-quantum-wells (MQWs) with x = 0.25, 0.5, and 1 are presented. The structures were grown by plasma-assisted molecular-beam epitaxy and characterized by x-ray diffraction, transmission electron microscopy, and secondary ion mass spectroscopy. Optical properties of these structures were investigated by ambient and high-pressure photoluminescence (PL) measurements. They were strongly affected by polarization-induced electric fields giving rise to a quantum confined Stark effect, depending on the composition of the AlGaN barrier. The optical emission energy redshifts by > 100 meV when the Al content in the barrier increases from x = 0.25 up to x = 1, while the pressure coefficients of the PL energy are significantly reduced in comparison with bulk GaN. The transition energies and their pressure dependencies are modelled for tetragonally strained structures with the same geometry using a full tensorial representation of the strain in the MQWs under external pressure. The same MQWs are also simulated using density functional theory calculations. Additionally, influence of blurring of well-barrier interface on transition energy has been modelled. A good agreement between experimental results and theoretical analysis indicates that nonlinear effects induced by the tetragonal strain due to the lattice mismatch between the substrates and the polar MQWs are responsible for a drastic decrease of the pressure coefficients of PL energy, and that these effects are well described by ab initio calculation procedures. Our results reflect the role of composition and geometry on the basic optical properties of nitride quantum wells.

Opaque substrates precluded, so far, transmission studies of II-VI semiconductor microcavities. This work presents the design and molecular beam epitaxy growth of semimagnetic (Cd,Zn,Mn)Te quantum wells embedded into a (Cd,Zn,Mg)Te-based microcavity, which can be easily separated from the GaAs substrate. Our lift-off process relies on the use of a MgTe sacrificial layer which stratifies in contact with water. This allowed us to achieve a II-VI microcavity prepared for transmission measurements. We evidence the strong light-matter coupling regime using photoluminescence, reflectivity, and transmission measurements at the same spot on the sample. By comparing a series of reflectance spectra before and after lift-off, we prove that the microcavity quality remains high. Thanks to Mn content in quantum wells we show the giant Zeeman splitting of semimagnetic exciton-polaritons in our transmitting structure.

Electronic and structural properties of $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ and its extension to copper doped $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}:\mathrm{Cu}$ were studied using combined ab initio simulations and transmission electron microscopy based techniques, including electron energy loss spectroscopy, energy filtered transmission electron microscopy, and energy dispersive x-ray spectroscopy. The stability of the mixed phases was investigated for substitutional and intercalation changes of basic $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ structure. Four systems were compared: $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$, structures obtaining by Cu intercalation of the van der Waals gap, by substitution of Bi by Cu in quintuple layers, and $\mathrm{C}{\mathrm{u}}_{2}\mathrm{Se}$. The structures were identified and their electronic properties were obtained. Transmission electron microscopy measurements of $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ and the $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}:\mathrm{Cu}$ system identified the first structure as uniform and the second as composite, consisting of a nonuniform lower-Cu-content matrix and randomly distributed high-Cu-concentration precipitates. Critical comparison of the ab initio and experimental data identified the matrix as having a $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ dominant part with randomly distributed Cu-intercalated regions having 1Cu-$\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ structure. The precipitates were determined to have 3Cu-$\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ structure.

This work presents epitaxial growth and optical spectroscopy of CdTe quantum dots (QDs) in (Cd,Zn,Mg)Te barriers placed on the top of (Cd,Zn,Mg)Te distributed Bragg reflector. The formed photonic mode in our half-cavity structure permits to enhance the local excitation intensity and extraction efficiency of the QD photoluminescence, while suppressing the reflectance within the spectral range covering the QD transitions. This allows to perform coherent, nonlinear, resonant spectroscopy of individual QDs. The coherence dynamics of a charged exciton is measured via four-wave mixing, with the estimated dephasing time $T_2=(210\,\pm\,40)$ ps. The same structure contains QDs doped with single Mn$^{2+}$ ions, as detected in photoluminescence spectra. Our work therefore paves the way toward investigating and controlling an exciton coherence coupled, via $s$,$p$-$d$ exchange interaction, with an individual spin of a magnetic dopant., 6 pages, 5 figures

Spontaneous and piezoelectric polarization in the nitrides is analyzed. The slab model was designed and proved to be appropriate to obtain the spontaneous polarization in AlN, GaN and InN. The spontaneous polarization and polarization related electric fields in AlN, GaN and InN were determined using DFT slab calculations. The procedure generates single value of spontaneous polarization in the nitrides. It was shown that Berry phase polarization may be applied to determination of spontaneous polarization by appropriate addition of polarization induced electric fields. The electric fields obtained from slab model are consistent with the Berry phase results of Bernardini et al. The obtained spontaneous polarization values are: 8.69*10-3 C/m2, 1.88*10-3 C/m2, and 1.96*10-3 C/m2 for AlN, GaN and InN respectively. The related Berry phase polarization values are 8.69*10-2 C/m2, 1.92*10-2 C/m2, and 2.86*10-2 C/m2, for these three compounds, respectively. The GaN/AlN multiquantum wells (MQWs) were simulated using ab intio calculations. The obtained electric fields are in good agreement with those derived from bulk polarization values. GaN/AlN MQWs structures, obtained by MBE growth were characterized by TEM and X-ray measurements. Time dependent photoluminescence measurements were used to determine optical transition energies in these structures. The PL obtained energies are in good agreement with ab initio data confirming overall agreement between theoretical and experimental data.

Bulk-related conduction electron spin resonance and conduction hole spin resonance were investigated in $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$, a three-dimensional topological insulator. Electrons in the conduction band and holes in the valence band both have spin \textonehalf{}. The effective $g$-factors for conduction electrons are equal to 27.3 \ifmmode\pm\else\textpm\fi{} 0.15 for magnetic field parallel to the c axis and 19.48 \ifmmode\pm\else\textpm\fi{} 0.07 for magnetic field perpendicular to the c axis, whereas for conduction holes 29.90 \ifmmode\pm\else\textpm\fi{} 0.09 for magnetic field parallel and 18.96 \ifmmode\pm\else\textpm\fi{} 0.04 for magnetic field perpendicular to the c axis, respectively. Nonparabolicity effects were not observed in the investigated low carrier concentration range, below $8\ifmmode\times\else\texttimes\fi{}{10}^{17}\phantom{\rule{0.28em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}3}$. Large $g$-factors, higher by an order of magnitude than the free electron value, are due to strong spin-orbit interactions in $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$. The striking similarity of the spin resonances due to conduction electrons and holes confirms the peculiar symmetry between the conduction and valence bands of $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$, both having similar effective masses and spin character.

The results of comprehensive theoretical and experimental study of binary GaN/AlN multi-quantum well (MQW) systems oriented along polar c-direction of their wurtzite structure are presented. A series of structures with quantum wells and barriers of various thicknesses were grown by plasma-assisted molecular-beam epitaxy and characterized by x-ray diffraction and transmission electron microscopy. It was shown that in general the structures of good quality were obtained, with the defect density decreasing with increasing quantum well thickness. The optical transition energies in these structures were investigated comparing experimental measurements with ab initio calculations of the entire GaN/AlN MQW structure depending on the QW widths and strains, allowing for direct determination of the energies of optical transitions and the electric fields in wells/barriers by electric potential double averaging procedure. Photoluminescence (PL) measurements revealed that the emission efficiency as well as the shape o...

Zinc oxide nanoparticles (ZnO NPs) were obtained by the microwave solvothermal synthesis (MSS) method. The precursor of the MSS reaction was a solution of hydrated zinc acetate in ethylene glycol with water addition. It was proved that by controlling the water concentration in the precursor it was possible to control the size of ZnO NPs in a programmed manner. The less the water content in the precursor, the smaller the size of ZnO NPs obtained. The obtained NPs with the average particle size ranging from 25 nm to 50 nm were characterised by homogeneous morphology and a narrow distribution of particle sizes. The following parameters of the obtained ZnO NPs were determined: pycnometric density, specific surface area, phase purity, chemical composition, lattice parameters, average particle size, and particle size distribution. The average size of ZnO NPs was determined using Scherrer’s formula, Nanopowder XRD Processor Demo web application, by converting the results of the specific surface area, and TEM tests using the dark field technique. ZnO morphology and structure were determined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The test performed by the X-ray powder diffraction (XRD) confirmed that crystalline ZnO, pure in terms of phase, had been obtained.

This article presents the method of size control of cobalt-doped zinc oxide nanoparticles (Zn1−xCoxO NPs) obtained by means of the microwave solvothermal synthesis. Zinc acetate dihydrate and cobalt(II) acetate tetrahydrate dissolved in ethylene glycol were used as the precursor. It has been proved by the example of Zn0.9Co0.1O NPs (x = 10 mol %) that by controlling the water quantity in the precursor it is possible to precisely control the size of the obtained Zn1−xCoxO NPs. The following properties of the obtained Zn0.9Co0.1O NPs were tested: skeleton density (helium pycnometry), specific surface area (BET), dopant content (ICP-OES), morphology (SEM), phase purity (XRD), lattice parameter (Rietveld method), average crystallite size (FW1/5/4/5M method and Scherrer’s formula), crystallite size distribution (FW1/5/4/5M method), and average particle size (from TEM and SSA). An increase in the water content in the precursor between 1.5% and 5% resulted in the increase in Zn0.9Co0.1O NPs size between 28 nm and 53 nm. The X-ray diffraction revealed the presence of only one hexagonal phase of ZnO in all samples. Scanning electron microscope images indicated an impact of the increase in water content in the precursor on the change of size and shape of the obtained Zn0.9Co0.1O NPs. The developed method of NPs size control in the microwave solvothermal synthesis was used for the first time for controlling the size of Zn1−xCoxO NPs.

Near-band-edge excitonic emission shift is investigated as a measure of the local strain in GaN nanowires with single AlxGa1−xN sections of various Al contents (x = 0.0, 0.22, 0.49, 1.0). Complementary data obtained by spatially and spectrally resolved cathodoluminescence spectroscopy and imaging of individual nanowires at low temperature, high resolution X-ray diffraction, and transmission electron microscopy are used to determine the correspondence between the cathodoluminescence emission energy and the strain in the GaN core of the nanowire surrounded by the AlxGa1−xN shell formed during the growth of AlxGa1−xN sections by catalyst-free plasma-assisted molecular beam epitaxy. In majority of nanowires, the blue-shift of GaN cathodoluminescence follows the evolution expected for the GaN core under uniaxial compressive strain along the axis of the structure.

High-pressure and time-resolved studies of the optical emission from n-type doped GaN/AlN multi-quantum-wells (MQWs) with various well thicknesses are analysed in comparison with ab initio calculations of the electronic (band structure, density of states) and optical (emission energies and their pressure derivatives, oscillator strength) properties. The optical properties of GaN/AlN MQWs are strongly affected by quantum confinement and polarization-induced electric fields. Thus, the photoluminescence (PL) peak energy decreases by over 1 eV with quantum well (QW) thicknesses increasing from 1 to 6 nm. Furthermore, the respective PL decay times increased from about 1 ns up to 10 μs, due to the strong built-in electric field. It was also shown that the band gap pressure coefficients are significantly reduced in MQWs as compared to bulk AlN and GaN crystals. Such coefficients are strongly dependent on the geometric factors such as the thickness of the wells and barriers. The transition energies, their oscilla...

Molecular beam epitaxy growth and basic physical properties of quaternary AlInGaN layers, sufficiently thick for construction of electron blocking layers (EBL), embedded in ternary InGaN layers are presented. Transmission electron microscopy (TEM) measurement revealed good crystallographic structure and compositional uniformity of the quaternary layers contained in other nitride layers, which are typical for construction of nitride based devices. The AlInGaN layer was epitaxially compatible to InGaN matrix, strained, and no strain related dislocation creation was observed. The strain penetrated for limited depth, below 3 nm, even for relatively high content of indium (7%). For lower indium content (0.6%), the strain was below the detection limit by TEM strain analysis. The structures containing quaternary AlInGaN layers were studied by time dependent photoluminescence (PL) at different temperatures and excitation powers. It was shown that PL spectra contain three peaks: high energy donor bound exciton pea...