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Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds exhibit anti-crossing gapped nodal lines, a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multi band system. We calculate a maximum AHE of 1965 S cm-1 in the CrPt3 by first principles electronic structure. We have grown high-quality CrPt3 thin films with perpendicular magnetic anisotropy by magnetron sputtering and measured a robust AHE of 1750 S cm−1 for different sputtering growth conditions. Additionally, the cubic films display an easy magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices. Topological magnetic semimetals can realise large intrinsic anomalous Hall effects using the characteristics of their electronic band structure and Berry curvature. Here, the authors predict an anomalous Hall effect for cubic CrPt3 using first principle calculations and confirm the results experimentally.

Passing a supercurrent through a topological material can highlight the existence of higher-order boundary states, and may lead to applications in topological superconductivity.

It has been suggested that certain antiferromagnetic topological insulators contain axion quasiparticles (AQs), and that such materials could be used to detect axion dark matter (DM). The AQ is a longitudinal antiferromagnetic spin fluctuation coupled to the electromagnetic Chern-Simons term, which, in the presence of an applied magnetic field, leads to mass mixing between the AQ and the electric field. The electromagnetic boundary conditions and transmission and reflection coefficients are computed. A model for including losses into this system is presented, and the resulting linewidth is computed. It is shown how transmission spectroscopy can be used to measure the resonant frequencies and damping coefficients of the material, and demonstrate conclusively the existence of the AQ. The dispersion relation and boundary conditions permit resonant conversion of axion DM into THz photons in a material volume that is independent of the resonant frequency, which is tuneable via an applied magnetic field. A parameter study for axion DM detection is performed, computing boost amplitudes and bandwidths using realistic material properties including loss. The proposal could allow for detection of axion DM in the mass range between 1 and 10 meV using current and near future technology., Comment: 78 pages + appendices, v2: reference list extended, added one more case to fig 23

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 {\mu}m to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb3Cl8 is an insulator, however the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed., Comment: 17 pages, 3 figures

Antiferromagnetically doped topological insulators (A-TI) are among the candidates to host dynamical axion fields and axion-polaritons; weakly interacting quasiparticles that are analogous to the dark axion, a long sought after candidate dark matter particle. Here we demonstrate that using the axion quasiparticle antiferromagnetic resonance in A-TI's in conjunction with low-noise methods of detecting THz photons presents a viable route to detect axion dark matter with mass 0.7 to 3.5 meV, a range currently inaccessible to other dark matter detection experiments and proposals. The benefits of this method at high frequency are the tunability of the resonance with applied magnetic field, and the use of A-TI samples with volumes much larger than 1 mm$^3$., 6 pages, 4 figures. v2 accepted for publication in Physical Review Letters. Many points clarified, some parameter estimates revised

The realization of Dirac and Weyl physics in solids has made topological materials one of the main focuses of condensed matter physics. Recently, the topic of topological nodal line semimetals, materials in which Dirac or Weyl-like crossings along special lines in momentum space create either a closed ring or line of degeneracies, rather than discrete points, has become a hot topic in topological quantum matter. Here, we review the experimentally confirmed and theoretically predicted topological nodal line semimetals, focusing in particular on the symmetry protection mechanisms of the nodal lines in various materials. Three different mechanisms: a combination of inversion and time-reversal symmetry, mirror reflection symmetry, and non-symmorphic symmetry and their robustness under the effect of spin orbit coupling are discussed. We also present a new Weyl nodal line material, the Te-square net compound KCu2EuTe4, which has several Weyl nodal lines including one extremely close to the Fermi level (30 meV below EF). Finally, we discuss potential experimental signatures for observing exotic properties of nodal line physics.

The spin Hall effect (SHE) is the conversion of charge current to spin current, and non-magnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here we predict and explain the large intrinsic SHE in $\beta$-W and the A15 family of superconductors: W$_3$Ta, Ta$_3$Sb, and Cr$_3$Ir having spin hall conductivities (SHC) of -2250, -1400, and 1210 $\frac{\hbar}{e}(\Omega cm)^{-1}$, respectively. Combining concepts from topological physics with the dependence of the SHE on the spin Berry curvature (SBC) of the electronic bands, we propose a simple strategy to rapidly search for materials with large intrinsic SHEs based on the following ideas: high symmetry combined with heavy atoms gives rise to multiple Dirac-like crossings in the electronic structure, without sufficient symmetry protection these crossings gap due to spin orbit coupling (SOC), and gapped Dirac crossings create large spin Berry curvature.

Topological materials which possess topologically protected surface states have attracted much attention in recent years. In this work, we study the critical current of superconductor/inversion symmetry breaking topological material/superconductor junctions. We found surprisingly that, in topological materials with broken inversion symmetry, the magnitude of the critical Josephson currents $|I^{+}_c(B)|$ at fixed magnetic field $B$ is not the same for critical currents $|I^{-}_c(B)|$ flowing in the opposite direction. Moreover, the critical currents violate the $| I_{c}^{\pm}(B)| = |I_{c}^{\pm}(-B)|$ relation and give rise to asymmetric Fraunhofer patterns. We call this phenomenon asymmetric Josephson effect (AJE). AJE can be use to detect inversion symmetry breaking in topological materials such as in quantum spin Hall systems and Weyl semimetals., Comment: 4+ pages, 4 figures. Comments are welcome

By combining bulk sensitive soft-x-ray angular-resolved photoemission spectroscopy and first-principles calculations we explored the bulk electron states of ${\mathrm{WTe}}_{2}$, a candidate type-II Weyl semimetal featuring a large nonsaturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we directly observe a three-dimensional electronic dispersion. We report a band dispersion in the reciprocal direction perpendicular to the layers, implying that electrons can also travel coherently when crossing from one layer to the other. The measured Fermi surface is characterized by two well-separated electron and hole pockets at either side of the $\mathrm{\ensuremath{\Gamma}}$ point, differently from previous more surface sensitive angle-resolved photoemission spectroscopy experiments that additionally found a pronounced quasiparticle weight at the zone center. Moreover, we observe a significant sensitivity of the bulk electronic structure of ${\mathrm{WTe}}_{2}$ around the Fermi level to electronic correlations and renormalizations due to self-energy effects, previously neglected in first-principles descriptions.

Dirac semimetals and Weyl semimetals are 3D analogs of graphene in which crystalline symmetry protects the nodes against gap formation [1-3]. Na$_3$Bi and Cd$_3$As$_2$ were predicted to be Dirac semimetals [4,5], and recently confirmed to be so by photoemission [6-8]. Several novel transport properties in a magnetic field $\bf H$ have been proposed for Dirac semimetals [2,9-11]. Here we report an interesting property in Cd$_3$As$_2$ that was unpredicted, namely a remarkable protection mechanism that strongly suppresses back-scattering in zero $\bf H$. In single crystals, the protection results in a very high mobility that exceeds $>10^7$ cm$^2$/Vs below 4 K. Suppression of backscattering results in a transport lifetime 10$^4\times$ longer than the quantum lifetime. The lifting of this protection by $\bf H$ leads to an unusual giant $\bf H$-linear magnetoresistance that violates Kohler's rule. We discuss how this may relate to changes to the Fermi surface induced by $\bf H$., Main text has 7 pages, 4 figures and 1 table. Text has been re-written with new results added. Supplement has 8 pages, 13 figures and 1 table, Nature Materials online Nov 24, 2014

An unusual angle-dependent topological phase transition and butterfly magnetoresistance were found in the Dirac semimetal ZrSiS., Magnetoresistance (MR), the change of a material’s electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual “butterfly”-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 105 percent at 9 T and 2 K at a 45° angle between the applied current (I || a) and the applied field (90° is H || c). Approaching 90°, a “dip” is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states.

In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect. As a result, TMDs have promising potential applications in electronics, catalysis, and spintronics. Despite the fact that the majority of related research focuses on semiconducting TMDs (e.g., MoS2), the characteristics of WTe2 are provoking strong interest in semimetallic TMDs with extremely large magnetoresistance, pressure-driven superconductivity, and the predicted Weyl semimetal (WSM) state. In this work, we investigate the sister compound of WTe2, MoTe2, which is also predicted to be a WSM and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that MoTe2 exhibits superconductivity with a resistive transition temperature Tc of 0.1 K. The application of a small pressure (such as 0.4 GPa) is shown to dramatically enhance the Tc, with a maximum value of 8.2 K being obtained at 11.7 GPa (a more than 80-fold increase in Tc). This yields a dome-shaped superconducting phase diagram. Further explorations into the nature of the superconductivity in this system may provide insights into the interplay between strong correlations and topological physics., Comment: 20 pages, 5 figures

© 2018 Author(s). We report ultrafast optical measurements of the Dirac line-node semimetal ZrSiS and the Weyl semimetal NbAs, using mid-infrared pump photons from 86 meV to 500 meV to directly excite Dirac and Weyl fermions within the linearly dispersing bands. In NbAs, the photoexcited Weyl fermions initially form a non-thermal distribution, signified by a brief spike in the differential reflectivity whose sign is controlled by the relative energy of the pump and probe photons. In ZrSiS, electron-electron scattering rapidly thermalizes the electrons, and the spike is not observed. Subsequently, hot carriers in both materials cool within a few picoseconds. This cooling, as seen in the two materials' differential reflectivity, differs in sign, shape, and timescale. Nonetheless, we find that it may be described in a simple model of thermal electrons, without free parameters. The electronic cooling in ZrSiS is particularly fast, which may make the material useful for optoelectronic applications.

The behaviour of electrons and holes in a crystal lattice is a fundamental quantum phenomenon, accounting for a rich variety of material properties. Boosted by the remarkable electronic and physical properties of two-dimensional materials such as graphene and topological insulators, transition metal dichalcogenides have recently received renewed attention. In this context, the anomalous bulk properties of semimetallic WTe2 have attracted considerable interest. Here we report angle- and spin-resolved photoemission spectroscopy of WTe2 single crystals, through which we disentangle the role of W and Te atoms in the formation of the band structure and identify the interplay of charge, spin and orbital degrees of freedom. Supported by first-principles calculations and high-resolution surface topography, we reveal the existence of a layer-dependent behaviour. The balance of electron and hole states is found only when considering at least three Te–W–Te layers, showing that the behaviour of WTe2 is not strictly two dimensional., Tungsten ditelluride is a semi-metallic two-dimensional material that has exhibited large magnetoresistance. Here, the authors use angle- and spin-resolved photoemission spectroscopy to investigate the band structure of this transition metal dichalcogenide and identify layer-dependent electronic behaviour.

Materials harbouring exotic quasiparticles, such as massless Dirac and Weyl fermions, have garnered much attention from physics and material science communities due to their exceptional physical properties such as ultra-high mobility and extremely large magnetoresistances. Here, we show that the highly stable, non-toxic and earth-abundant material, ZrSiS, has an electronic band structure that hosts several Dirac cones that form a Fermi surface with a diamond-shaped line of Dirac nodes. We also show that the square Si lattice in ZrSiS is an excellent template for realizing new types of two-dimensional Dirac cones recently predicted by Young and Kane. Finally, we find that the energy range of the linearly dispersed bands is as high as 2 eV above and below the Fermi level; much larger than of other known Dirac materials. This makes ZrSiS a very promising candidate to study Dirac electrons, as well as the properties of lines of Dirac nodes., The family of topological materials has been growing rapidly but most members bare limitations hindering the study of exotic behaviour of topological particles. Here, Schoop et al. report a Fermi surface with a diamond-shaped line of Dirac nodes in ZrSiS, providing a promising candidate for studying two-dimensional Dirac fermions.

We investigate the orthorhombic phase $({T}_{d})$ of the layered transition-metal dichalcogenide ${\mathrm{MoTe}}_{2}$ as a Weyl semimetal candidate. ${\mathrm{MoTe}}_{2}$ exhibits four pairs of Weyl points lying slightly above $(\ensuremath{\sim}6\phantom{\rule{0.16em}{0ex}}\mathrm{meV})$ the Fermi energy in the bulk band structure. Different from its cousin ${\mathrm{WTe}}_{2}$, which was recently predicted to be a type-II Weyl semimetal, the spacing between each pair of Weyl points is found to be as large as 4% of the reciprocal lattice in ${\mathrm{MoTe}}_{2}$ (six times larger than that of ${\mathrm{WTe}}_{2}$). When projected onto the surface, the Weyl points are connected by Fermi arcs, which can be easily accessed by angle-resolved photoemission spectroscopy due to the large Weyl point separation. In addition, we show that the correlation effect or strain can drive ${\mathrm{MoTe}}_{2}$ from a type-II to a type-I Weyl semimetal.

Recent years have seen the rapid discovery of solids whose low-energy electrons have a massless, linear dispersion, such as Weyl, line-node, and Dirac semimetals. The remarkable optical properties predicted in these materials show their versatile potential for optoelectronic uses. However, little is known of their response in the picoseconds after absorbing a photon. Here, we measure the ultrafast dynamics of four materials that share non-trivial band structure topology but that differ chemically, structurally, and in their low-energy band structures: ZrSiS, which hosts a Dirac line node and Dirac points; TaAs and NbP, which are Weyl semimetals; and Sr1–yMn1–zSb2, in which Dirac fermions coexist with broken time-reversal symmetry. After photoexcitation by a short pulse, all four relax in two stages, first sub-picosecond and then few-picosecond. Their rapid relaxation suggests that these and related materials may be suited for optical switches and fast infrared detectors. The complex change of refractive index shows that photoexcited carrier populations persist for a few picoseconds.

The magnetoresistance effect in WTe2, a layered semimetal, is extremely large: the electrical resistance can be changed by more than 13 million per cent at very high magnetic fields and low temperatures. Apply a magnetic field to a magnetoresistive material and its electrical resistance changes — a technologically useful phenomenon that is harnessed, for example, in the data-reading sensors of hard drives. Mazhar Ali and colleagues have now identified a material (tungsten ditelluride or WTe2) in which the magnetoresistance effect is unusually large: the electrical resistance can be changed by more than 13 million per cent. Its remarkable magnetoresitance is evident at very high magnetic fields and at extremely low temperatures, so practical applications are not yet in prospect. But this finding suggests new directions in the study of magnetoresistivity that could ultimately lead to new uses of this effect. Magnetoresistance is the change in a material’s electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors1, in magnetic memory2, and in hard drives3 at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures4. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices., Comment: 18 pages, 7 figures

The anomalous Hall effect soars when Dirac quasiparticles meet frustrated magnetism., The anomalous Hall effect (AHE) is one of the most fundamental phenomena in physics. In the highly conductive regime, ferromagnetic metals have been the focus of past research. Here, we report a giant extrinsic AHE in KV3Sb5, an exfoliable, highly conductive semimetal with Dirac quasiparticles and a vanadium Kagome net. Even without report of long range magnetic order, the anomalous Hall conductivity reaches 15,507 Ω−1 cm−1 with an anomalous Hall ratio of ≈ 1.8%; an order of magnitude larger than Fe. Defying theoretical expectations, KV3Sb5 shows enhanced skew scattering that scales quadratically, not linearly, with the longitudinal conductivity, possibly arising from the combination of highly conductive Dirac quasiparticles with a frustrated magnetic sublattice. This allows the possibility of reaching an anomalous Hall angle of 90° in metals. This observation raises fundamental questions about AHEs and opens new frontiers for AHE and spin Hall effect exploration, particularly in metallic frustrated magnets.