Back to Search Start Over

Directly photoexcited Dirac and Weyl fermions in ZrSiS and NbAs

Authors :
Hans A. Bechtel
Keshav M. Dani
J. Matthew Kim
Stuart S. P. Parkin
Ernerst Arushanov
Robert C. Newby
Bettina V. Lotsch
Chris Weber
Mazhar N. Ali
Bala Murali Krishna Mariserla
Alex Nateprov
Leslie M. Schoop
Source :
Applied Physics Letters, vol 113, iss 22, Applied Physics Letters, Weber, CP; Schoop, LM; Parkin, SSP; Newby, RC; Nateprov, A; Lotsch, B; et al.(2018). Directly photoexcited Dirac and Weyl fermions in ZrSiS and NbAs. Applied Physics Letters, 113(22), 221906-221906. doi: 10.1063/1.5055207. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8f51v870
Publication Year :
2018
Publisher :
AIP Publishing, 2018.

Abstract

© 2018 Author(s). We report ultrafast optical measurements of the Dirac line-node semimetal ZrSiS and the Weyl semimetal NbAs, using mid-infrared pump photons from 86 meV to 500 meV to directly excite Dirac and Weyl fermions within the linearly dispersing bands. In NbAs, the photoexcited Weyl fermions initially form a non-thermal distribution, signified by a brief spike in the differential reflectivity whose sign is controlled by the relative energy of the pump and probe photons. In ZrSiS, electron-electron scattering rapidly thermalizes the electrons, and the spike is not observed. Subsequently, hot carriers in both materials cool within a few picoseconds. This cooling, as seen in the two materials' differential reflectivity, differs in sign, shape, and timescale. Nonetheless, we find that it may be described in a simple model of thermal electrons, without free parameters. The electronic cooling in ZrSiS is particularly fast, which may make the material useful for optoelectronic applications.

Details

Language :
English
ISSN :
00036951
Volume :
113
Issue :
22
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....e0962982eb9cd7651df55f2271957dd1
Full Text :
https://doi.org/10.1063/1.5055207