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1. Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

Author

J. Borrel, Didier Blavette, P. Dumas, Fanny Hilario, Sébastien Duguay, STMicroelectronics [Crolles] (ST-CROLLES), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Monatomic gas, Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Atom probe, 021001 nanoscience & nanotechnology, 01 natural sciences, Ion, law.invention, Ion implantation, chemistry, law, Phase (matter), Electric field, 0103 physical sciences, 0210 nano-technology, Instrumentation, Carbon
Abstract

Atom probe tomography was employed to observe and derive the composition of carbon clusters in implanted silicon. This value, which is of interest to the microelectronic industry when considering ion implantation defects, was estimated not to exceed 2 at%. This measurement has been done by fitting the distribution of first nearest neighbor distances between monoatomic carbon ions (C+ and C2+). Carbon quantification has been considerably improved through the detection of molecular ions, using lower electric field conditions as well as equal proportions of 12C and 13C. In these conditions and using another quantification method, we have shown that the carbon content in clusters approaches 50 at%. This result very likely indicates that clusters are nuclei of the SiC phase.

Published
2021
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2. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Author

Sébastien Duguay, Vincent Lu, Edwin Arevalo, F. Hilario, P.L. Julliard, Fabien Deprat, J. Borrel, P. Dumas, Wei Zou, W. Zhao, Didier Blavette, STMicroelectronics [Crolles] (ST-CROLLES), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Applied Materials Gloucester, Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Silicon, Diffusion barrier, Phosphorus, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Atom probe, Trapping, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, chemistry, law, Phase (matter), 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Carbon, Stoichiometry, ComputingMilieux_MISCELLANEOUS
Abstract

Carbon has been co-implanted to phosphorus at low temperature (−100 °C) in silicon. As compared to a room temperature carbon implant, phosphorus activation is increased due to the suppression of extended defects. The unusual carbon depleted region observed in both secondary ion mass spectroscopy and atom probe tomography annealed profiles has been explained and modeled using an interstitialcy diffusion barrier of 0.6 eV. Carbon clusters have been interpreted as being composed of several immobile dimers carbon/self-interstitial, in agreement with the stoichiometry of the SiC phase. From the model presented here, an adequate temperature window (>750 °C) has been found regarding self-interstitials trapping by carbon.

Published
2021
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3. Atom probe tomography quantification of carbon in silicon

Author

Sébastien Duguay, J. Borrel, P. Dumas, F. Hilario, Didier Blavette, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), STMicroelectronics [Crolles] (ST-CROLLES), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), ST Microlectronics, and Entreprise privée

Subjects
Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Atom probe, 7. Clean energy, 01 natural sciences, law.invention, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, law, Electric field, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Dopant, Polyatomic ion, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, 0210 nano-technology, Carbon, Stoichiometry
Abstract

Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12C and 13C, the numerous molecular ions that were observed were identified and their contribution to the carbon content statistically derived. Much more accurate carbon quantification was obtained in the lowest electric field analysis by comparing APT with Secondary Ion Mass Spectroscopy profiles. This was assigned to a lower amount of molecular ion dissociations. Furthermore, the number of self-interstitials trapped per carbon atom in clusters was derived. This value of interest for the microelectronics industry regarding dopant diffusion and implantation induced defects was estimated close to one, in agreement with the expected stoichiometry of the SiC phase present in the phase diagram. However, this was obtained only when using low electric field conditions.

Published
2021
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4. 3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon

Author

E. Ghegin, P. Dumas, A. Gauthier, J. Borrel, Didier Blavette, Sébastien Duguay, STMicroelectronics [Crolles] (ST-CROLLES), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, Diffusion, Analytical chemistry, Nucleation, chemistry.chemical_element, 02 engineering and technology, Atom probe, 01 natural sciences, law.invention, Condensed Matter::Materials Science, law, Phase (matter), 0103 physical sciences, Physics::Atomic and Molecular Clusters, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Dopant, 021001 nanoscience & nanotechnology, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dislocation, 0210 nano-technology, Carbon
Abstract

Dopant diffusion and structural defects are investigated in a carbon-phosphorus implanted silicon. End-of-range defects maturation and phosphorus diffusion are inhibited. A direct imaging of carbon segregation to dislocation loops is given by atom probe tomography. Segregation energies of carbon atoms to these defects are estimated to be about 0.37 eV. The comparison between observed and derived cluster radii indicates a quick decrease in the self-interstitial supersaturation during the nucleation step of carbon precipitation. Carbon clusters are likely to be the precursors of a metastable phase, which is not the expected SiC phase.

Published
2019
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5. 450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

Author

Pascal Chevalier, L. Clement, M. Buczko, Alexis Gauthier, A. Montagne, J. Borrel, C. Borowiak, Marc Juhel, G. Avenier, C. Gaquiere, and Romain Duru

Subjects
010302 applied physics, Materials science, Silicon, Dopant, business.industry, Annealing (metallurgy), Heterojunction bipolar transistor, 020208 electrical & electronic engineering, Doping, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, CMOS, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business
Abstract

This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous doping species are studied. On the one hand, both silicon defects and dopants profiles control are evaluated and on the other hand, hf performances are presented. Carbon-phosphorous co-implantation is also investigated and a state-of-the-art 450 GHz $f_{\text{T}}$ HBT compatible with 55-nm MOSFETs is demonstrated through a device layout study.

Published
2018
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6. Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

Author

Vincent Lu, Fuccio Cristiano, Denis Rideau, Remi Beneyton, Nicolas Guitard, Marc Juhel, Edwin Arevalo, Wei Zou, C. Borowiak, Thomas Nassiet, Frederic Monsieur, E. Ghegin, L. Pinzelli, J. Borrel, K. Dabertrand, Romain Duru, L. Clément, Evan Oudot, and Sylvain Joblot

Subjects
010302 applied physics, Condensed Matter::Materials Science, Work (thermodynamics), Ion implantation, Photoluminescence, Materials science, 0103 physical sciences, Radiative transfer, Kinetic Monte Carlo, 01 natural sciences, Molecular physics, Characterization (materials science)
Abstract

In this work, heated implantation impact on defect generation is observed for non-amorphizing conditions and specific anneal. Photoluminescence imaging method has been used and exhibits radiative defect density variation with chuck temperature. Moreover, to understand the behavior of such implantation in terms of defect generation and depth profile, effectiveness of Kinetic Monte Carlo (KMC) simulations is discussed.

Published
2018
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7. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs

Author

Sebastien Martinie, Claude Tabone, C. Le Royer, Louis Hutin, J. Borrel, M. Vinet, and R. P. Oeflein

Subjects
010302 applied physics, Materials science, business.industry, Ambipolar diffusion, Schottky barrier, Doping, Transistor, Electrical engineering, Biasing, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Signature (logic), Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, Homojunction, 0210 nano-technology, business, Quantum tunnelling
Abstract

In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si 0.8 Ge 0.2 homojunctions, which we compare to those measured on conventional MOSFETs and Schottky Barrier FETs. The difference with the former is immediate since a single TFET can display a transistor effect under both pull-up (nTFET) and pull-down (pTFET) biasing conditions. This is however a property shared with SBFETs, in which injection occurs via tunneling through a single carrier Schottky Barrier instead of band-to-band tunneling. Without requiring quantitative considerations on the current levels or transfer characteristics, we find that simply performing the same dual I D – V DS electrical tests while voluntarily “swapping” the S/D terminals unequivocally characterizes TFET operation, even compared to asymmetrically doped SBFETs.

Published
2016
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8. Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

Author

Vincent Lu, L. Clement, Alexis Gauthier, Edwin Arevalo, Pascal Chevalier, Fabien Deprat, Wei Zou, Heloise Tupin, F. Abbate, Didier Dutartre, Sylvain Joblot, and J. Borrel

Subjects
Materials science, business.industry, Economies of agglomeration, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Crystallographic defect, Ion implantation, CMOS, 0103 physical sciences, Optoelectronics, Dewetting, Thin film, 010306 general physics, 0210 nano-technology, business
Abstract

To co-integrate bipolar devices with 28 nm FDSOI CMOS using the epitaxial extrinsic base isolated from the collector architecture, an epitaxy is needed on a pre-implanted SOI. The issue of thin film agglomeration induced by epitaxy pre-bake is addressed. Particularly, it is shown that high dose implantation induced damages and point defects lead to a decrease of the SOI critical temperature of agglomeration. In this study, heated implantation is proposed in order to solve this issue.

Published
2018
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9. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Author

Yves Morand, Louis Hutin, Donato Kava, Fabrice Nemouchi, Maud Vinet, Magali Gregoire, Emmanuel Dubois, N. Bernier, J. Borrel, Remy Gassilloud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Texas [El Paso] (UTEP ), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authority through NANO, French Public Authority through Equipex [FDSOI11], and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Applied physics, business.industry, General Engineering, General Physics and Astronomy, Nanotechnology, Insulator (electricity), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, Electrical resistivity and conductivity, 0103 physical sciences, 0210 nano-technology, business
Abstract

International audience; In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation. (c) 2017 The Japan Society of Applied Physics

Published
2017
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10. High performance CMOS FDSOI devices activated at low temperature

Author

Louis Hutin, J. Mazurier, D. Barge, L. Pasini, Olivier Weber, Frédéric Mazen, F. Piegas Luce, Claire Fenouillet-Beranger, M. Vinet, Antoine Cros, E. Ghegin, B. Mathieu, S. Chhun, J. Borrel, Frederic Boeuf, Quentin Rafhay, Anthony Payet, Michel Haond, Perrine Batude, M. Casse, Fuccio Cristiano, Benoit Sklenard, Zineb Saghi, Joris Lacord, D. Blachier, J.P. Barnes, Gerard Ghibaudo, Francois Andrieu, V. Mazzocchi, N. Rambal, J. Micout, Vincent Delaye, V. Lapras, Laurent Brunet, R. Daubriac, Pascal Besson, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, PMOS logic, CMOS, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, business, NMOS logic
Abstract

International audience; 3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are obtained thanks to the adapted extension first architecture and the introduction of mobility boosters (pMOS: SiGe 27% channel / SiGe:B 35% RSD and nMOS: SiC:P RSD). This first demonstration of n and p extension first FDSOI devices shows that low temperature activated device can match the performance of a device with state-of-the-art high temperature process (above 1000°C).

Published
2016
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11. Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Author

Maud Vinet, H. Grampeix, Emmanuel Dubois, Magali Gregoire, Emmanuel Nolot, Yves Morand, Magali Tessaire, J. Borrel, Guillaume Rodriguez, Fabrice Nemouchi, Louis Hutin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), STMicroelectronics [Grenoble] (ST-GRENOBLE), Jiang, YL, Qu, XP, Ru, GP, Li, BZ, and Laboratoire commun STMicroelectronics-IEMN T4

Subjects
010302 applied physics, Materials science, business.industry, Insulator (electricity), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, 0103 physical sciences, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Metal insulator, 0210 nano-technology, business
Abstract

International audience; In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.

Published
2016

12. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Author

Louis Hutin, J. Borrel, Olivier Rozeau, Sebastien Martinie, Emmanuel Dubois, Magali Gregoire, Maud Vinet, Marie-Anne Jaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
02 engineering and technology, Ring oscillator, Dielectric, 01 natural sciences, Omega, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, 0103 physical sciences, MOSFET, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ohmic contact, n and pFETs cointegration, 010302 applied physics, Physics, Condensed matter physics, business.industry, Doping, Electrical engineering, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Semiconductor, ring oscillators (ROs) frequency, Metal/insulator/semiconductor (MIS) contacts, 0210 nano-technology, business
Abstract

In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to result in simultaneously successful Fermi-level pinning alleviation on both n and pFETs. We show that the added $C_{\mathrm { {MIS}}}$ contributes to a significant extra improvement in terms of intrinsic inverter delay. In particular, an optimal configuration consisting of Pt-liner/ p-Si and Zr/TiO2(15A)/n-Si contacts can lead to a ring oscillator frequency higher than that of p and nFETs each flanked by ideal ohmic contacts with $10^{-9}~\Omega \cdot {\mathrm{ cm}}^{2}$ resistivity.

Published
2016
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13. Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Author

Nava Setter, Z. Huang, Stefania Pizzini, Igor Stolichnov, L. Herrera Diez, Laurent Ranno, Gilles Gaudin, Olivier Boulle, J. Borrel, S. Auffret, Anne Bernand-Mantel, Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland, Ecole Polytechnique Fédérale de Lausanne (EPFL), Micro et NanoMagnétisme (MNM), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Micro et NanoMagnétisme (NEEL - MNM), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Magnetic domain, Condensed matter physics, Nucleation, 02 engineering and technology, Coercivity, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, Hysteresis, Magnetic anisotropy, Condensed Matter::Materials Science, Domain wall (magnetism), 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Single domain, 010306 general physics, 0210 nano-technology
Abstract

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows for ferroelectric control of coercivity and magnetic domain dynamics. These effects have been monitored and quantified using magneto-optical Kerr effect. In particular, the regimes, where the ferroelectric domains enhance/inhibit the magnetic domain nucleation or increase/reduce domain wall velocity, have been explored. Thus, non-destructive and reversible ferroelectric domain writing provides a tool to define the magnetic domain paths, create nucleation sites, or control domain movement. (C) 2013 AIP Publishing LLC.

Published
2013
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