28 results on '"Balestra, Francis"'
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2. Challenges and possible solutions for the end of the Nanoelectronic Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and balestra, francis
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2020
3. Comparative experimental study of junctionless and inversion mode nanowire transistors for analog applications
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Bosch, Daphnée, Colinge, J.P., Lugo, J., Tataridou, A., Theodorou, Christoforos, Garros, Xavier, Barraud, Sylvain, Lacord, Joris, Sklenard, Benoit, Cassé, Mikaël, Brunet, L., Batude, Perrine, Fenouillet-Beranger, Claire, Lattard, D., Cluzel, J., Allain, F., Nait Youcef, R., Hartmann, J.M., Vizioz, C., Audoit, G., Balestra, Francis, Andrieux, François, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Democritus University of Thrace (DUTH), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des champs magnétiques intenses (LCMI-GHMFL), Centre National de la Recherche Scientifique (CNRS), Département Nanotec (D2NT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), and balestra, francis
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
International audience; We fabricated junctionless and inversion-mode monocrystalline nanowire nMOSFETs down to L=18nm gate length and W=20nm width. We demonstrate record performance of nanowire junctionless transistors for analog applications: AVT=1.4mV.µm matching, Av0=62dB gain (L=200nm), fT=126GHz cutoff frequency and fMAX=182GHz maximum operating frequency (L=35nm). Junctionless transistor performances even exceed those of inversion-mode ones in terms of back-bias capability, low-frequency noise, hot-carrier degradation and fMAX. This is explained by junctionless physics: channel length modulation, bulk conduction and high channel-depth sensitivity to back bias.
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- 2020
4. A novel FDSOI transistor-based uncooled microbolometer sensor for disruptive IRFPAs
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Leduc, Patrick, Aliane, A., Balestra, Francis, albouy, antoine, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and balestra, francis
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
International audience; Uncooled bolometer detecting in the long wave infrared (LWIR) is a key technology for a fast growing market supported by innovations in defense and security, automotive industry and Internet of Things (IoT). Thermistor materials-whose resistance changes with temperature-like amorphous silicon (a-Si) or Vanadium Oxide (VOx) are commonly used as thermal sensitive element of uncooled bolometers. They are nevertheless not well suited for an ultimate cost reduction, as their fabrication requires a dedicated manufacturing line. One way to reduce the cost of production of this class of detectors is to aim at a bolometer integration scheme fully compatible with microelectronics industry. In this context, we propose a novel approach based on FDSOI (Fully Depleted Silicon-On-Insulator) MOS transistors as thermal sensitive element. Unlike thermistor technology, FDSOI transistors are realized on a standard CMOS line for high-throughput and low-cost manufacturing. Their performance as thermal sensors in subthreshold operation are besides higher than thermistors materials, with TCC (Temperature Coefficient of Current) in the range of 5.5-6 %/K against 2-2.5 %/K for the TCR (Temperature Coefficient of Resistance) of thermistor materials. From a technological point of view, the FPA final structure might be obtained by bonding these transistors from a first silicon wafer onto a second ROIC (Read Out Integrated Circuit) wafer thanks to a classical 3D integration process known as hybrid bonding (copper-copper and dielectric-dielectric direct bonding). This work consists in a first insight in the feasibility of the technology. It presents results obtained on FDSOI transistors that have been bonded on a second silicon wafer, thanks to a classical operation of SiO 2-SiO 2 molecular bonding. The substrate of origin (sensor wafer) of these transistors has been etched away, and a second control gate has been formed on the backside of the transistors. Measurements comparing bonded and unbonded transistors are presented. Electrical parameters like I(V), low frequency noise and TCC (Temperature Coefficient of Current) measurements are discussed to compare transistors before and after bonding. Extraction of interface trap density has also been carried out in order to assess the impact of post-bonding technological steps on the interfaces of the FDSOI transistor. Results demonstrate that electrical performances are the same between transistors measured before and after bonding, including a same level of low frequency noise and a same TCC. Interface trap density extraction shows that interfaces before and after bonding are of the same quality. 2
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- 2020
5. Status and trends in nanoscale CMOS and Beyond-CMOS
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Balestra, Francis, balestra, francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2020
6. Challenges for high performance and very low power operation at the end of the Nanoelectronics Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Hardware_INTEGRATEDCIRCUITS ,Hardware_PERFORMANCEANDRELIABILITY ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Hardware_LOGICDESIGN - Abstract
International audience; Future Nanoelectronic devices faces substantial challenges, in particular increased power consumption, saturation of performance, large variability and reliability limitation. In this respect, novel materials and innovative device architectures will be needed for Nanoscale FETs.
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- 2019
7. Advanced technologies for future materials and devices
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2019
8. NanoCMOS and Small Slope Switches for the end of the Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2018
9. Innovative Materials for Nanoscale MOSFETs and Small Slope Switches
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2018
10. Beyond CMOS-Devices and Future of Nanoelectronics
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2017
11. Ultimate CMOS and Beyond-CMOS for the End of the Nanoelectronic Roadmap
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
Forum 4: Nanoelectronic and Nanosystems: session 404: Nanosystems and Nano-devices; International audience
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- 2017
12. Novel Materials for Low-Power and High-Performance Nanoscale FETs
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2017
13. Challenges and Solutions for High Performance Nanoscale Devices Combined with Nanomaterials
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
Module 1: Smart Nanomaterials: T105: Nanodevices and NanoSystems; International audience
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- 2017
14. NanoCMOS and Tunnel FETs for the end of the Roadmap
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Balestra, Francis, Ducroquet, Frédérique, NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID, Silicon-based Nanodevices - SINANO - 26139 - OLD, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), and European Project: 26139,SINANO
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2017
15. Tunnel FETs trends and challenges
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), F. Balestra and Anda Mocuta, Sinano Summer School 2016, European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2016
16. Innovative Nanodevices for the end of the Roadmap: Ultimate scaling and performance
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2016
17. New materials and Innovative Architectures for Ultimate Nanoelectronic Devices
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Ducroquet, Frédérique, and NanoElectronics Roadmap for Europe: Identification and Dissemination - NEREID - - H20202015-11-16 - 2018-11-15 - 685559 - VALID
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2016
18. Emerging Steep Switch Devices & CMOS Technologies for ultra low power operation
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Future and Emerging Technologies projects MULTI and TOLOP, and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2015
19. Oxide Stress Separation technique for the assessment of Inter-Gate Dielectric integrity in 40 nm Flash memory cells
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Dobri, Adam, Jeannot, Simon, Piazza, Fausto, Jahan, Carine, Coignus, Jean, Perniola, Luca, Balestra, Francis, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), IEEE, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMethodologies_GENERAL ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
session poster; International audience
- Published
- 2015
20. Nanowires for ultimate CMOS and small slope switches
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), European Project: 26139,SINANO, Ducroquet, Frédérique, Silicon-based Nanodevices - SINANO - 26139 - OLD, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2015
21. Challenges to ultra-low-power operation
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMethodologies_GENERAL ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
session poster; International audience
- Published
- 2015
22. Multi-Gate Devices, Nanowires and Small Slope Switches for very Low Energy consumption and new functionalities
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
23. Alternative materials and beyond-CMOS FETs for very low power operation
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CMNE, and Ducroquet, Frédérique
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ISBN-10: 192750046XISBN-13: 978-1927500460 ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
24. Ultra low power device operation
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Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
25. European structuring, roadmaping and networking
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), e2-Switch, ESSDERC 2014, and A. M. Ionescu
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
26. Fully-depleted SOI MOSFETs, Multi-Gate Devices, Nanowires and Small Slope Switches for very low power operation
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Balestra, Francis, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
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[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2014
27. Modeling tools for the capacitance-voltage and current-voltage characteristics of advanced gate stacks comparison between different approache
- Author
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Barin, N., Palestri, P., Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Domenget, Chahla
- Subjects
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2006
28. Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures
- Author
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Christoforos G. Theodorou, F. Balestra, Gerard Ghibaudo, L. Contamin, Mikael Casse, F. Serra di Santa Maria, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and balestra, francis
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Materials science ,business.industry ,Scattering ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Gate length ,Silicon on insulator ,Limiting ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,MOSFET ,Materials Chemistry ,Optoelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is carried out down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only needed to fit the device characteristics versus temperature for long channel devices. Instead, in short channels, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased presence of neutral defects close to source/drain ends whatever the temperature.
- Published
- 2022
- Full Text
- View/download PDF
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