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11 results on '"Decobert, Jean"'

1. Improving the understanding of the KPFM technique through analyses of InP multilayers with associated modelling

Author

da Lisca, Mattia, Connolly, J.P., Alvarez, J, Vaissiere, Nicolas, Decobert, Jean, Kleider, Jean-Paul, Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Alcatel-Thales III-V Lab (III-V Lab), THALES, and KLEIDER, Jean-Paul

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

2. Low temperature plasma epitaxy of Silicon on III-V

Author

Hamon, Gwenaëlle, Vaissière, Nicolas, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, THALES [France]-ALCATEL, and KLEIDER, Jean-Paul

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

3. Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition

Author

Hamon, Guénaëlle, Vaissière, Nicolas, Cariou, Romain, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, KLEIDER, Jean-Paul, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Total S.A. Renewables, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

National audience

Published
2018

4. Modelling of multijunction cells

Author

Lachaume, Raphaël, Foldyna, Martin, Hamon, Gwenaëlle, Vaissière, Nicolas, Cariou, Romain, Decobert, Jean, Roca I Cabarrocas, Pere, Alvarez, J, Kleider, Jean-Paul, Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Lachaume, Raphaël, and THALES-ALCATEL

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

5. Si1-xGex alloys on III-V (100): first steps in film growth by low temperature PECVD epitaxy

Author

Vaissière, Nicolas, Hamon, Gwenaëlle, Lachaume, Raphaël, Chen, Wanghua, Decobert, Jean, Alvarez, J, Kleider, Jean-Paul, Roca I Cabarrocas, Pere, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, Lachaume, Raphaël, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

National audience

Published
2016

6. In-Depth Analysis of III-V/Epi-SiGe Tandem Solar Cell Performance Including Advanced Light Trapping Schemes

Author

Lachaume, Raphaël, Foldyna, Martin, Hamon, Gwenaëlle, Decobert, Jean, Cariou, Romain, Cabarrocas, Pere Roca I., Alvarez, José, Kleider, Jean-Paul, KLEIDER, Jean-Paul, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ARCSIS, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES [France]-ALCATEL

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Si GaAs, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Tandem solar cell, [SPI.MAT] Engineering Sciences [physics]/Materials, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials, TCAD Simulation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, III V compounds, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Si Ge alloy, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; The growing interest in new concepts of III-V/Si tandem solar cells arises from the need to reduce the cost of high efficiencyIII-V based multi-junctions by using low cost substrates such as silicon. Because it is still a challenge to grow III-V materials directlyonto Si wafers due to thermal expansion and lattice mismatch issues, other ways of combining III-V compounds and Si have beendeveloped. Among them is the reversed metamorphic concept recently proposed by Cariou et al.. In the latter approach, the Si bottomcell is deposited by low temperature PECVD (

Published
2016

7. Realistic simulation of III-V/epi-SiGe tandem solar cells

Author

Lachaume, Raphaël, Cariou, Romain, Decobert, Jean, Foldyna, Martin, Hamon, Gwenaelle, Cabarrocas, Pere Roca I., Alvarez, J, Kleider, Jean-Paul, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2015

8. SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications

Author

Decobert, Jean, Cariou, Romain, Louarn, Kevin, Fortin, Catherine, Lachaume, Raphaël, Alvarez, J, Kleider, Jean-Paul, Foldyna, Martin, Cabarrocas, Pere Roca I., Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2015

9. Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenide

Author

Lachaume, Raphaël, Cariou, Romain, Decobert, Jean, Foldyna, Martin, Hamon, Gwenaelle, Cabarrocas, Pere Roca I., Alvarez, J, Kleider, Jean-Paul, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NRJ] Engineering Sciences [physics]/Electric power, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Multijunction solar cells based on III-V compounds have by far the highest conversion efficiency. However, the fabrication cost is very high. An attractive solution to lower the cost while maintaining high efficiencies is to design multijunctions on cheaper substrates such as silicon [1]. Different routes have been taken to cope with lattice mismatch issues between Si and III-Vs: epitaxial growth of GaAs on Si with or without buffer layers or non-epitaxial techniques such as mechanical stacking. A novel approach has been recently presented consisting in direct epitaxial growth of thin Si or SiGe layers on GaAs by low temperature PECVD [2], where the high crystal quality reported opens a new way for making III-V/Si tandem solar cells. For a given thickness of the epi-Si or epi-SiGe bottom cell (typically less than 5 µm), it is crucial to find the optimum composition of the III-V top cell. This depends on both optical and electrical properties of the entire structure. Actually, the common efficiency calculations are based on the ideal radiative limit [1] and suffer from limiting assumptions, e.g. complete absorption in the sub-cells, no non-radiative recombination in the bottom cell. In this paper we thus propose an extensive numerical simulation study using TCAD tools to calculate realistic maximum efficiencies and facilitate the design of III-V/epi-SiGe tandem cells. [1] J. Connolly et al., Prog. Photovolt: Res. Appl 22 (2014) 810 [2] R. Cariou et al., 40th IEEE PVSC (2014)

Published
2015

10. Towards realistic simulation of the novel III-V/epi-Si tandem solar cell concept

Author

Lachaume, Raphaël, Cariou, Romain, Decobert, Jean, Foldyna, Martin, Hamon, Gwenaëlle, Roca I Cabarrocas, Pere, Alvarez, J, Kleider, Jean-Paul, Lachaume, Raphaël, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, IPVF, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES [France]-ALCATEL

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Si, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, multijunction solar cell, tandem solar cell, III-V, simulation, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, low temperature epitaxy
Abstract

International audience; Multijunction solar cells based on III-V compounds have by far the highest conversion efficiency. However, the fabrication cost is very high. An attractive solution to lower the cost while maintaining high efficiencies is to design multijunctions on cheaper substrates such as silicon. Different routes have been taken to cope with lattice mismatch issues between Si and III-Vs: epitaxial growth of GaAs on Si with or without buffer layers or non-epitaxial techniques such as mechanical stacking. A novel approach has been recently presented consisting in direct epitaxial growth of thin Si or SiGe layers on GaAs by low temperature PECVD, where the high crystal quality reported opens a new way for making III-V/Si tandem solar cells. Yet, due to the low deposition rate, the epi-Si layers are still rather thin (~10μm), and though they are assumed to be of high quality, some defects might be still present at the interface or in the bulk. These critical aspects still have to be carefully investigated to evaluate the potential benefits of this novel concept. Here, numerical simulation has definitely a role to play. Therefore, we propose to simulate these novel structures using TCAD tools and to estimate the defect density inside the thin epi-layer based on experimental inputs. Realistic efficiencies achievable by this novel concept will thus be presented and discussed.

Published
2015

11. Investigation of Hybrid Tunnel Junction Architectures for III-V/Si Tandem Solar Cells

Author

Hamon, Gwenaelle, Cariou, Romain, Lachaume, Raphaël, Decobert, Jean, Louarn, Kevin, Chen, Wanghua, Alvarez, J, Kleider, Jean-Paul, Cabarrocas, Pere Roca I., Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES [France]-ALCATEL

Subjects
0303 health sciences, 03 medical and health sciences, 0302 clinical medicine, New Materials and Concepts for cells, [SPI.NRJ]Engineering Sciences [physics]/Electric power, NEW MATERIALS AND CONCEPTS FOR SOLAR CELLS AND MODULES, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 7. Clean energy, 030217 neurology & neurosurgery, [SPI.MAT]Engineering Sciences [physics]/Materials, 030304 developmental biology
Abstract

31st European Photovoltaic Solar Energy Conference and Exhibition; 75-79, We fabricated n-Si/p-GaAs and p-Si/n-GaAs junctions, by combining low temperature (under 200°C) RFPECVD for Si and MOVPE for GaAs. In particular, we focused on low-resistance Si/GaAs tunnel junctions (< 1 mΩ.cm2) suitable for the interconnection of two subcells in tandem III-V/Si solar cells. We first demonstrate the growth of highly doped epitaxial silicon films on GaAs despite the 4% lattice-match between these two materials. Spectroscopic ellipsometry measurements were used to confirm the quality of the epitaxial Si layers. The electrical properties of the grown junctions were measured based on four-point probes method and analyzed using TCAD simulations on Silvaco. We demonstrate a very low resistance for the p-Si/n-GaAs junction, down to 3.10-5 .cm2, with current densities above 10.000 A/cm2, suitable for ultra-high concentration photovoltaics, largely exceeding the requirement for our low concentration targeted conditions (below 20 suns).

Published
2015
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