Search

Perpendicular magnetic anisotropy (PMA) in magnetic thin films has attracted much attention due to its potential applications in spintronics devices. Here, we report the continuous strain-mediated PMA in epitaxial (111) CoFe 2 O 4 (CFO) thin films grown on (0001) LiTaO 3 substrates. A large variation in lattice strain (∼ 0.9 %) in a continuous way is realized in the CFO thin films by changing substrate temperature during deposition due to the difference in the thermal expansion coefficient between CFO and LiTaO 3. As a result, the PMA of the (111) CFO thin films can be continuously mediated by the strain with uniaxial magnetic anisotropy energy in the range of 0.12 - 14.69 × 10 6 erg/cm 3. Furthermore, the strain as well as the consequent PMA in the (111) CFO thin films can be maintained within the thickness of 25–205 nm, which is consistent with the scenario of the magnetoelastic effect. Our results reveal that the CFO/LiTaO 3 system can be regarded as an ideal platform to realize robust PMA and its continuous strain tuning in the (111) CFO thin films by virtue of strain-induced magnetic anisotropy. [ABSTRACT FROM AUTHOR]

To obtain high energy storage density in ferroelectric films, polarization and breakdown field Eb are two crucial factors. The inversely coupled relationship between polarization and Eb is commonly observed and it remains a challenge to realize high E b without deteriorating polarization. Selecting a suitable element doping should largely enhance the Eb since of the optimization of microstructures as well as the decrease in defects, meanwhile the doping should induce extra polarization contribution from lattice distortion. In this work, we reported that Eb can be largely enhanced via Mn doping in BaBi4Ti4O15 thin films due to grain refining, densification, and oxygen vacancy reduction. Interestingly, the polarization is not deteriorated since of the Mn doping effect induced extra polarization from the lattice distortion. Consequently, an ultrahigh energy storage density of 96 J/cm3 with a high efficiency of 76.6% was achieved in BaBi4Ti3.95Mn0.05O15 thin films with excellent stability and reliability. This work will provide a simple and effective route to improve the energy storage in dielectric capacitors. [ABSTRACT FROM AUTHOR]

The development of high-performance optically induced voltage materials represents a significant challenge within the realm of optical detection. The constraints posed by low induced voltage and extended response times have impeded the practical applicability of optical and thermal radiation detectors. In this investigation, we propose the utilization of superconducting Bi2Sr2CuOy (Bi-2201) as a pulsed laser-induced voltage material, revealing the emergence of notable transverse voltage signals in tilted thin films. A noteworthy peak voltage of 25.12 V is attained upon exposure to ultraviolet pulsed laser (248 nm), with a rapid rise time of merely 60 ns. Furthermore, we establish an empirical equation specific to our laser detection heterostructure, serving as a benchmark for Bi-2201-based laser detection systems. These findings introduce a promising avenue for the expanded practical applications of high-temperature superconductors. [ABSTRACT FROM AUTHOR]

Transparent conducting oxides (TCOs), combining the mutually exclusive functionalities of high electrical conductivity and high optical transparency, lie at the center of a wide range of technological applications. The current design strategy for n-type TCOs, making wide bandgap oxides conducting through degenerately doping, obtains successful achievements. However, the performances of p-type TCOs lag far behind the n-type counterparts, primarily owing to the localized nature of the O 2 p -derived valence band (VB). Modulation of the VB to reduce the localization is a key issue to explore p-type TCOs. This Perspective provides a brief overview of recent progress in the field of design strategy for p-type TCOs. First, the introduction to principle physics of TCOs is presented. Second, the design strategy for n-type TCOs is introduced. Then, the design strategy based on the concept of chemical modulation of the valence band for p-type TCOs is described. Finally, through the introduction of electron correlation in strongly correlated oxides for exploring p-type TCOs, the performance of p-type TCOs can be remarkably improved. The design strategy of electron correlation for p-type TCOs could be regarded as a promising material design approach toward the comparable performance of n-type TCOs. [ABSTRACT FROM AUTHOR]

Resistive random access memories with self-rectifying behaviors, in which the sneak-path issue in passive crossbar arrays can be alleviated without additional access devices, have been investigated recently. The applications of p-type transparent oxide semiconductors as a memory medium will pave the way for realizing all-transparent memories and integrating on the complementary metal-oxide-semiconductor devices. Here, Ag-based p-type delafossite AgCr 1 − x Mg x O 2 thin films were prepared onto n-Si wafers to investigate the resistive switching (RS) performance. Bipolar RS with self-rectifying behaviors were observed in the Au / AgCr 0.92 Mg 0.08 O 2 / n − Si sandwich structure, showing improved rectification ratio, On/Off ratio, and switching durability. The change of the oxygen vacancy concentration resulting from Mg doping plays a key role in determination of the RS. The intrinsic rectifying behavior in the low resistance state is attributed to the existence of a Schottky-like barrier in the AgCr 1 − x Mg x O 2 / n − Si p-n heterojunction. The RS behavior originates from the modification of the barrier, which is induced by the trapping/detrapping of charge carriers in oxygen vacancies at the interface. The results will provide novel RS devices based on p-type transparent delafossite thin films with a self-rectifying feature. [ABSTRACT FROM AUTHOR]

The influence of growth rate and substrate temperature on the two-dimensional electron gas (2DEG) of LaVO 3 / SrTiO 3 interfaces has been investigated. It is found that both growth rate and substrate temperature can modulate the structural and electrical properties of the LaVO 3 / SrTiO 3 interfaces through oxygen substrate-to-film transfer. When the LaVO 3 thin films are deposited at a low substrate temperature and a high growth rate, the LaVO 3 / SrTiO 3 interfaces exhibit weak oxygen substrate-to-film transfer and resultant low density of oxygen vacancies in the SrTiO 3 substrate. As a result, the intrinsic effect (polar discontinuity and/or dielectric screening) dominates the interfacial conduction, while the oxygen vacancies play a minor role. In contrast, the oxygen substrate-to-film transfer (oxygen vacancies in the SrTiO 3 substrate) can be enhanced (increased) by depositing the LaVO 3 thin films at lower growth rates and/or higher substrate temperatures. In this case, the contribution of oxygen vacancies to the interfacial conduction would prevail over the intrinsic effect. Our results elucidate the origins of 2DEG in the LaVO 3 / SrTiO 3 interfaces and may also be important for other SrTiO 3 -based heterointerfaces. [ABSTRACT FROM AUTHOR]

Jian-Guo Wu, Rui-Hua Wei, Ai-Hua Liu, Xiao-Xu Zhou, Guo-Ling Sun, Xiao-Rong LiTianjin Medical University Eye Center, Tianjin, ChinaBackground: The purpose of this prospective, interventional, comparative case series was to evaluate the efficiency and feasibility of a disposable sutureless silicone lens ring for corneal contact lens stabilization during combined 23-gauge vitrectomy and cataract surgery.Methods: We developed a ring consisting of a single silicone component with three footplates along the ring margin to fit cannulae for holding conventional contact lenses. Thirty eyes from 30 patients with cataract and vitreoretinal disease were included, and divided into two matched groups according to disease type and ring used. In Group A, we used a 23-gauge transconjunctival vitrectomy system and a disposable sutureless silicone lens ring (n = 15). In Group B, we used a 23-gauge transconjunctival vitrectomy system and a conventional metal lens ring (n = 15). The main outcome measures were: time required for vitrectomy preparation, rate of intraoperative corneal limbus bleeding, and limbus scar rate at the final follow-up visit.Results: Thirty cases were successfully completed. The average vitrectomy preparation time was less in Group A than in Group B (P < 0.01), and the average preparation time saved was 3.94 minutes. None of the Group A patients had intraoperative bleeding or postoperative scarring, whereas all 15 Group B cases had bleeding and five had scarring. There was a statistically significant difference between Group A and Group B for these complications (P ≤ 0.05).Conclusion: This report demonstrates the advantages of using a sutureless silicone ring during combined 23-gauge vitrectomy and cataract surgery. Using this method could allow extra time for the surgeon to pay more attention to complex vitreoretinal procedures.Keywords: pars plana vitrectomy, contact lens, silicone ring, cataract surgery

Lead-free Na0.5Bi0.5TiO3 (NBT) exhibiting large polarization and a high Curie temperature can be considered as a promising candidate for dielectric capacitors. The large polarization switching hysteresis and low breakdown field, however, restrict the performance optimization. Herein, epitaxial NBT-based high-entropy Na0.5Bi0.5Ti0.7Hf0.1Zr0.1Sn0.1O3 (NBTHZS) films are designed and prepared by solution-based processing. Compared with the NBT film, the polarization switching hysteresis is depressed and the breakdown field is significantly improved for the NBTHZS film due to the high-entropy effects. Therefore, the NBTHZS film achieves a ∼16 times enhancement of energy density (from 5.1 J/cm3 of the NBT film to 81 J/cm3 of the NBTHZS film) and a high efficiency of 74.1% as well as an excellent performance reliability. The results shed light on enhancing dielectric energy storage properties of NBT-based films by forming high-entropy structures. [ABSTRACT FROM AUTHOR]

Design and realization of high-efficiency p-type thermoelectric materials with excellent performance are the demand for integrated thermoelectric components. Compared with single crystal bulk materials, thermoelectric thin films are more suitable for the miniaturization of thermoelectric devices. Here, c-axis oriented CuRh1−xMgxO2 (x = 0, 0.05, and 0.1) thin films were prepared and the thermoelectric properties are reported. The power factor of a p-type 10% Mg-doped CuRhO2 thin film shows a large value of 535.7 μW K–2 m-1 at 300 K. The results suggest that the hole-doped CuRhO2 thin films can be regarded as potential p-type thermoelectric oxide and will pave an avenue to develop Rh-based thermoelectric thin films. [ABSTRACT FROM AUTHOR]

The traditional strategy for transparent conducting oxides (TCOs) follows the path of chemical design by increasing carrier concentrations in insulators through deliberate doping to coordinate the exclusive properties of electrical conductivity with optical transparency. Despite the success of n-type TCOs, the developed p-type TCOs based on chemical design exhibit much lower performance than the n-type counterparts primarily constrained by the hole doping trouble. Recently, the correlated metal of a V2O3 thin film has been reported as high-performance p-type TCOs with high hole concentration (>1022 cm−3). In this paper, we propose an alternative approach of compressive strain in V2O3 thin films toward further increasing the carrier concentration and, consequently, enhancing the performance of p-type TCOs. The compressive strain of the V2O3 thin film is realized by the lattice mismatch between V2O3 and Al2O3. Interestingly, carrier concentrations in strained V2O3 thin films can be increased by several times exceeding 1023 cm−3, which directly correlates with the increase (decrease) in a 1 g ( e g π ) orbital occupation as verified by the Raman spectrum. Meanwhile, the screened plasma energy of a strained V2O3 thin film shifts to ∼1.6 eV, which is less than 1.75 eV to assure the opening of the transparency window in the visible region. As a result, strained V2O3 thin films exhibit enhanced performance as p-type TCOs with relatively high figure of merit. These results indicate that the structural modification can open up an effective approach for increasing the carrier concentration and enhancing the performance of p-type TCOs. [ABSTRACT FROM AUTHOR]

La2Mo2O9 (LMO) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and the resistive switching (RS) characteristics of the Au/LMO/Pt devices has been investigated. The Au/LMO/Pt devices show excellent unipolar RS characteristics with high resistance ratio between high resistance state and low resistance state (LRS), good endurance, and retention performances. The results of temperature dependence of resistance and x-ray photoelectron spectroscopy suggest that the observed RS characteristics can be explained by the formation and rupture of conducting filaments composed of oxygen vacancies. Furthermore, the plot of the reset current (IR) as a function of the third harmonic coefficient (B0) caused by Joule heating during the reset process shows scaling behavior with a power law of IR∝ B0-δ. The IR and reset power (PR) can also be scaled to the resistance in LRS (R0), i.e., IR(PR) ∝ R0-α(β). The observed scaling behaviors indicate the importance of the Joule heating for the RS characteristics of Au/LMO/Pt devices. These results demonstrate the potential application of LMO thin film in a nonvolatile memory device. [ABSTRACT FROM AUTHOR]

The high-quality (111)-oriented pyrochlore oxide thin films Y2(Hf1-xIrx)2O7 (YHIO) were prepared by pulsed laser deposition. The bandgap values of Ir-substituted YHIO thin films for x = 0–0.5 range from 4.6 to 1.9 eV. Taking account of spin orbital coupling and correlation effect (U), the first-principles calculations based on density functional theory were used to intercept this variation. The theoretical results illustrate that the variation is attributed to the lower Ir 5d orbital in energy and stronger orbital hybridization between the oxygen 2p orbital and the Ir 5d orbital near the Fermi surface. These results suggest that we can widely modulate the bandgap through B-site chemical substitution based on the Y2Hf2O7 thin film. [ABSTRACT FROM AUTHOR]

Flexible Ba2Bi4Ti5O18 and BiFe0.93Mn0.07O3/Ba2Bi4Ti5O18 heterostructure thin-film capacitors were deposited onto LaNiO3 buffered fluorophlogopite mica substrates using a cost-effective all-solution chemical solution deposition method. The Ba2Bi4Ti5O18 film showed a high recoverable energy storage density (Ure) of 41.2 J/cm3 and efficiency (η) of 79.1%. The BiFe0.93Mn0.07O3/Ba2Bi4Ti5O18 film showed improved energy storage properties with an ultrahigh Ure of 52.6 J/cm3 and η of 75.9% due to its enhanced breakdown field strength and polarization. Meanwhile, both films showed good mechanical flexibility, excellent fatigue endurance up to 5 × 108 cycles, and excellent thermal stability over a wide temperature range from room temperature to 160 °C. These results indicate that the lead-free, flexible Ba2Bi4Ti5O18 and BiFe0.93Mn0.07O3/Ba2Bi4Ti5O18 heterostructure thin film capacitors show promise in the field of flexible electronics. [ABSTRACT FROM AUTHOR]

Epitaxial BaSnO3 (BSO) thin films doped with different rare-earth elements (La, Pr, and Nd) were prepared by a simple solution deposition method. Grain size engineering through processing was achieved to tune both lateral and vertical grain sizes, resulting in obvious increments in carrier mobility. Improved performance with the room-temperature mobility exceeding 35 cm2 V−1 s−1 and resistivity as low as 0.55 mΩ cm was realized. The results will open a low-cost route for preparation of large-area BSO thin films with improved optoelectronic properties through the solution method. [ABSTRACT FROM AUTHOR]

Developing lead-free film dielectric capacitors with high-performance of energy storage density, efficiency, fatigue endurance, and thermal stabilities is desirable. Here, we report energy storage properties in (1-x)BaTiO3-xBi3.25La0.75Ti3O12 thin films. It is revealed that a 0.6BaTiO3-0.4Bi3.25La0.75Ti3O12 thin film with a thickness of 280 nm and a crystallization temperature of 650 °C shows a breakdown strength of 3.23 MV/cm with a large polarization value and dielectric constant. An ultrahigh energy storage density of 61.1 J/cm3 and an efficiency of 84.2% are simultaneously achieved at room temperature. Additionally, excellent fatigue endurance after 6 × 109 cycles and good thermal stability up to 150 °C are observed, implying excellent energy storage performance in 0.6BaTiO3-0.4Bi3.25La0.75Ti3O12 thin films. [ABSTRACT FROM AUTHOR]

Spinal cord injury (SCI) may cause disastrous damage to human locomotion and ultimately make patients suffer from gait anomaly. In the extensive SCI research, the locomotion function serves as a vital standard not only for revealing the underlying SCI mechanism but also for evaluating the clinical therapy. Gait division is the basis of gait analysis. Calculation of gait parameters is available for locomotion function evaluation only when gait cycles are accurately divided. Based on the characteristics of stride height, which is defined as the real-time height of toes vertical to the running direction of a treadmill belt, this study presented three automatic gait division methods, divided the gait cycles for healthy and spinal cord-injured rhesus monkeys, established the evaluation standards, and made comparison of these three methods. For the healthy, injured and mixed groups, the overall accuracies of these three methods were respectively 0.871 ± 0.223, 0.570 ± 0.372, and 0.720 ± 0.339 (method 1); 0.658 ± 0.245, 0.737 ± 0.206, and 0.698 ± 0.228 (method 2); 0.966 ± 0.060, 0.759 ± 0.343, and 0.863 ± 0.265 (method 3). The results show that the stride height characteristics combined with the filter technique may help realize the adequate gait division. [ABSTRACT FROM AUTHOR]

Thin film ferroelectric capacitors (TFFCs) with excellent energy storage have attracted increasing attention due to the electronic devices toward miniaturization and integration. BiFeO3 (BF)/ Bi3.25La0.75Ti3O12 (BL) based thin films are prepared by chemical solution deposition for energy storage. Ultrahigh energy storage with a recoverable energy density Ure of 54.9 J/cm3 and an efficiency g of 74.4% is observed in the bilayered BF/BL thin films. Further improvement of energy storage is realized in trilayered BL/BF/BL thin films with a Ure of 65.5 J/cm3 and an efficiency g of 74.2% at an electric field of 2753 kV/cm as well as excellent fatigue endurance up to 109 cycles. The results suggest that BF/BL based thin films can be used as lead-free TFFCs in energy storage applications. [ABSTRACT FROM AUTHOR]

Environmentally benign Bi3.25La0.75Ti3O12 (BLTO) thin film capacitors were prepared by a cost effective chemical solution deposition method for high energy density storage device applications. Low annealing temperature annealed BLTO thin films showed very slim hysteresis loops with high maximum and small remnant polarization values. Increasing the applied electric field to 2040 kV/ cm, the optimized BLTO thin films show a high recoverable energy density of 44.7 J/cm3 and an energy efficiency of 78.4% at room temperature. Additionally, the BLTO thin film capacitors exhibited excellent fatigue endurance after 4x108 cycles and a good thermal stability up to 140°C, proving their strong potential for high energy density storage and conversion applications. [ABSTRACT FROM AUTHOR]

As a type of perovskite transparent conducting oxides, La-doped BaSnO3 is considered as a very important material to construct all transparent perovskite devices. The difficulty in achievement of large-area films with high electrical mobility has hindered the development of La-doped BaSnO3 films. Here, we report the results about chemical solution deposition of Ba0.92La0.08SnO3-δ (BLSO) films. The post-annealing and atmosphere as well as lattice mismatch have been investigated. Post-annealing at 1000 °C can obviously improve the performance due to the enhanced crystallization. Under post-annealing in N2 atmosphere the room-temperature resistivity and electrical mobility can achieve 3.25 mΩ cm and 11.09 cm² V-1 s-1, respectively, for the BLSO on LaAlO3 single crystal substrates due to the enhanced oxygen deficiencies. BLSO films with different orientation can be easily obtained by selection of the substrates, showing isotropic physical properties. Furthermore, the room-temperature resistivity and mobility are optimized to 1.8 mΩ cm and 23.04 cm² V-1 s-1 when SrTiO3 single crystal substrates with smaller lattice mismatch are used due to the decreased dislocation density. The results will provide an alternative route to fabricate large-area transparent conducting alkaline-earth stannate films with high performance using low-cost chemical solution deposition. [ABSTRACT FROM AUTHOR]