Achieving high energy storage performances in high-entropy epitaxial Na0.5Bi0.5Ti0.7Hf0.1Zr0.1Sn0.1O3 thin film.

Authors :: Liu, M.
Gong, C. Z.
Yang, B. B.
Hu, L.
Wei, R. H.
Song, W. H.
Dai, J. M.
Zhu, X. B.
Sun, Y. P.
Source :: Applied Physics Letters; 12/26/2022, Vol. 121 Issue 26, p1-7, 7p
Publication Year :: 2022
Abstract: Lead-free Na<subscript>0.5</subscript>Bi<subscript>0.5</subscript>TiO<subscript>3</subscript> (NBT) exhibiting large polarization and a high Curie temperature can be considered as a promising candidate for dielectric capacitors. The large polarization switching hysteresis and low breakdown field, however, restrict the performance optimization. Herein, epitaxial NBT-based high-entropy Na<subscript>0.5</subscript>Bi<subscript>0.5</subscript>Ti<subscript>0.7</subscript>Hf<subscript>0.1</subscript>Zr<subscript>0.1</subscript>Sn<subscript>0.1</subscript>O<subscript>3</subscript> (NBTHZS) films are designed and prepared by solution-based processing. Compared with the NBT film, the polarization switching hysteresis is depressed and the breakdown field is significantly improved for the NBTHZS film due to the high-entropy effects. Therefore, the NBTHZS film achieves a ∼16 times enhancement of energy density (from 5.1 J/cm<superscript>3</superscript> of the NBT film to 81 J/cm<superscript>3</superscript> of the NBTHZS film) and a high efficiency of 74.1% as well as an excellent performance reliability. The results shed light on enhancing dielectric energy storage properties of NBT-based films by forming high-entropy structures. [ABSTRACT FROM AUTHOR]

Subjects :: ENERGY storage
THIN films
ENERGY density
CURIE temperature
HYSTERESIS
TIN alloys

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