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Meishan pigs tend to have higher disease resistance than commercial breeds, although more studies are needed to confirm this difference. This study compared intestinal barrier function between Meishan and crossbred neonatal piglets to provide guidance for both the breeding and nutritional regulation of pigs. Six Meishan piglets and 6 Duroc × (Landrace × Yorkshire) crossbred neonatal piglets (all with normal birth weights) were obtained and allocated into the MEIS and CROSS groups, respectively. Intestinal morphology, goblet cell numbers, antioxidant enzyme activity, and cytokine gene and tight junction protein expression were assessed. The results showed that BW was lower in the MEIS group than in the CROSS group (P < 0.01). The relative lengths of the duodenum (P < 0.05), jejunum (P < 0.01) and ileum (P < 0.01) in the MEIS group were higher than those in the CROSS group. Compared with the CROSS group, the MEIS group exhibited shorter villus lengths in the duodenum and jejunum (P < 0.01), a shallower crypt depth in the ileum (P < 0.001) and denser and longer microvilli in the intestine. The numbers of GCs in the duodenum (P < 0.01) and jejunum (P < 0.001) and the activity levels of glutathione peroxidase (P < 0.05) in the jejunum and of catalase (P < 0.01) and superoxide dismutase (P < 0.01) in the ileum were higher in the MEIS group than in the CROSS group. Compared with the CROSS group, the MEIS group exhibited higher gene expression levels of interleukin (IL) 4 and interferon γ (IFNγ) in the jejunum (P < 0.05); IL2 (P < 0.05), IL4 (P < 0.01) and IFNγ (P < 0.001) in the ileum; and mucin 2 (P < 0.01) and occludin (P < 0.05) in the duodenum. In conclusion, Meishan neonatal piglets showed lower birth weights but higher intestinal barrier function than crossbred piglets. [ABSTRACT FROM AUTHOR]

Abstract: The magnetite cap of chiton tooth (Acanthochiton rubrolineatus) was studied with SEM. Three microstructurally distinct regions were recognized: Region I, close to the anterior surface of the cusp and composed of thick rod microstructure units; Region III, close to the posterior surface and composed of fine fibers; and Region II, sandwiched between Regions I and II and composed of thin sheets. The microstructure units in the three regions constitute a continuous and integrated architecture component. The hardness of Regions I and II was measured to be Hv270 and Hv490, respectively. Based on these microstructure observation and hardness data, the abrasive behavior and microstructural mechanism of self-sharpening of the chiton tooth were discussed in the paper. The self-sharpening was attributed to the combined effect of the hardness and the texture orientation of the microstructure units in Regions I and II. [Copyright &y& Elsevier]

To place β-FeSi2 as a 3rd generation Kankyo (Environmentally Friendly) Semiconductor after GaAs, one should demonstrate its superior features by fabricating practical devices. One has to prepare high-quality β-FeSi2 films with (1) precisely controlled Fe/Si ratio (1:2), (2) flat and cracks-free surface, (3) pinhole-free surface and interfaces, (4) flat interfaces, (5) well-controlled electron or hole concentration with residual carrier concentration as low as ∼10 16 cm-3. One should accordingly explore novel thin film manufacturing technologies by considering specific properties of constituent Fe and Si atoms. Conventional growth methods used for III–V and II–VI compound semiconductor films are not suited for β-FeSi2. Here we summarize the current status of film preparation technologies and describe their advantages and drawbacks. To explore the possibility of β-FeSi2 for low cost and high conversion efficiency solar cells, high quality β-FeSi2 films have been formed on Si substrates by molecular beam epitaxy (MBE) and sputtering methods. The critical feature about the device structure is an optimized thin β-FeSi2 template buffer layer on Si(111) substrate. The template served as a substrate for epitaxial growth of single crystal β-FeSi2 film and restrains the Fe diffusion into Si at β-FeSi2/Si interface. For n-β-FeSi2/p-Si structure under air mass 1.5, an energy conversion efficiency of 3.7% was obtained, showing that β-FeSi2 is practically a promising semiconductor for making solar cells. [Copyright &y& Elsevier]