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Thin porphyrin films as employed in modern optical devices or photovoltaic applications show deviating electronic and optical properties from the gasphase species. Any understanding of the physical origin may pave way to a specific engineering of these properties via ligand or substituent control. Here we investigate the impact of crystallization of prototypical porphyrins on the electronic levels and optical properties in the framework of density functional theory and many-body perturbation theory. Crystallization substantially shrinks the HOMO-LUMO gap based on polarization effects. We find a shift of the HOMO to higher energy is consistent with recent experiment of MgTPP multilayer film on Ag (100) [A. Classen et al., Phys. Rev. B, 2017, 95, 115414]. Calculated excitation spectra demonstrate a significant redshift of excitation bands except for the Q bands. These lowest excitation bands, in stark contrast to the strong HOMO-LUMO gap renormalization, remain essentially the same as in the gas phase. Our work underlines the possibility of band-gap engineering via ligand-controlled modification of the polarizability.

Identification and manipulation of transition-metal ion impurities in oxide nanoparticles require an in-depth understanding of their stability, segregation behavior, and, at the same time, knowledge about their surface reactivity. Powders of magnesium oxide nanoparticles with admixtures of iron or cobalt ions, as two next neighbors in the periodic table, were synthesized in the gas phase via injection of metal–organic precursors into the magnesium combustion flame followed by temperature quenching of resulting nanocrystals in argon. In these model systems of cubic nanocrystals, we explored the distinct stability of these impurities in great detail. While Co2+ ions keep their divalent valence state and substitute the host ions in the cationic sublattice, Fe3+ ions emerge due to the energy gain provided by charge compensation and impurity–vacancy complex formation. The very different behavior of Co and Fe ions in the MgO host lattice, their changes in the local environment, and the different trends in segre...

An important pathway for functionalization of porphyrin-based organic-inorganic structures is the metalation of porphyrins. Recently, the porphyrin metalation was demonstrated on different metal oxide surfaces, however, the underlying mechanisms regarding the role of the surface morphology, the substituted metal, and ligands are still under investigation. Here we address the adsorption and self-metalation of H2TPP on a MgO(001) surface with low-coordinated sites. We employ ab initio molecular dynamics simulations around room temperature to provide insight into dynamic steric effects. We observe that H2TPP is mobile on the pristine surface as the steric hindrance by phenyl rings prevents the physisorption of the macrocycle at a specific site. In contrast, step edges or kink sites provide anchor points exposing low-coordinated, reactive oxygen-sites to hydrogens of the macrocycle. We report a spontaneous proton transfer at these sites forming an intermediate complex before the metalation occurs. The energetics of the self-metalation reaction is modeled. Deutsche Forschungsgemeinschaft BO 1851/4-1 Fonds zur Förderung der Wissenschaftlichen Forschung (DE-588)2054142-9 I 3385-N34 Version of record

Point defects: The whole picture The electronic states of point defects in semiconductors can be studied via first principles, suitable for large systems with thousands of electrons. The nitrogen-vacancy centre in diamond and the divacancy complex in silicon carbide are promising candidates for quantum applications. The non-radiative decay from their optically allowed excited states is pivotal to initializing and reading their spin. Michel Bockstedte and colleagues now model the electronic states of these defects using a method that relies on many-body theory and is free of empirical parameters. They map the optical transitions, as well as the spin relaxation dynamics and the role of the spin-orbit and electron-phonon coupling interactions involved, in good agreement with experimental data. The method is suitable for large systems, and can therefore be used to model qubits in other semiconductors.

The differences in the electroluminescence (EL) of red-emitting free-base (H2TPP) and Zn-metalated (ZnTPP) archetypal porphyrins are rationalized in light-emitting electrochemical cells by means of an electric-field dependent effect, leading to whitish and reddish devices, respectively. Although H2TPP shows superior electrochemical and photophysical features compared to ZnTPP, devices prepared with ZnTPP surprisingly stand out with a deep-red EL similar to its photoluminescence (PL), while H2TPP devices feature unexpected whitish EL. Standard arguments such as degradation, device architecture, device mechanism, and changes in the nature of the emitting excited states are discarded. Based on electrochemical impedance spectroscopy and first-principles electronic structure methods, we provide evidence that the EL originates from two H2TPP regioisomers, in which the inner ring H atoms are placed in collinear and vicinal configurations. The combination of their optical features provides an explanation for both the high- and low-energy EL features. Here, the emitting excited state nature is ascribed to the Q bands, since the Soret excited states remain high in energy. This contrasts to what is traditionally postulated in reports focused on H2TPP lighting devices. Hence, this work provides a new explanation for the nature of the high-energy EL band of H2TPP that might inspire future works focused on white-emitting molecular-based devices.

Germanium (Ge) doping of 4H silicon carbide (SiC) has recently attracted attention because a conductivity-enhancing effect was reported. In this work, we report on an experimental and theoretical approach to elucidate this effect. Ge and tin (Sn) – a second candidate of group IV elements – have been implanted into n-type 4H-SiC. Despite the expected isoelectric nature of Ge and Sn, a more efficient annealing of implantation-induced defects was observed compared to noble gas implantation with identical simulated initial implantation damage. In particular, a strong reduction of the prominent Z1/2 defect was observed. Density functional theory calculations under equilibrium conditions show that Ge is mainly incorporated on a substitutional silicon lattice site without creating new charge transition levels in the bandgap. The low abundance of other Ge-related defects suggests that kinetic mechanisms should be responsible for the observed effect of group IV doping.

In SiC, mobile point defects may form thermally stable clusters and aggregates, such as di-vacancies or carbon interstitial complexes. Although predicted by theory, experimental evidence of such clusters became available only recently. Combining theoretical and experimental approaches, the unique identification of the di-vacancy, the carbon vacancy-antisite complex with the spin resonance centers P6/P7 and SI5 was recently achieved. In this way also the di-carbon and tri-carbon antisites with the photoluminiscence centers P–T and U, HT3 and HT4, respectively were identified. The two identified vacancy complexes show distinct properties: while the di-vacancy, like the silicon vacancy possesses a high-spin ground state, the carbon vacancy–antisite complex, like the carbon vacancy, is a Jahn–Teller center. These effects consistently explain the complex properties of the spin resonance spectra and are discussed in detail for the isolated vacancies. The aggregation of vacancies proved to be relevant in the explantation of the kinetic deactivation of nitrogen in co-implanted SiC. This and further evidence for defect aggregates underline the relevance of this notion. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The key factor determining nucleation processes and faceting in homoepitaxial growth as well as texture competition is the mobility of adatoms and small clusters across step edges and facets. Using a combination of molecular dynamics and ab initio calculations, we investigate the mechanisms of small clusters (dimer and trimer) diffusion down the aluminum (1 1 1) surface. In this paper we report results of molecular dynamics studies. Our study shows that the clusters dissociate at the step-edge of compact islands. As a result, the clusters diffuse down the step by an exchange mechanism with a small or medium Schwoebel barrier. The mechanism of this down-diffusion/dissociation is discussed and the corresponding energetics are calculated using the molecular statics method. We find a large anisotropy between the barriers at the two types of 〈1 1 0〉 oriented steps.

The n-type dopants phosphorus and nitrogen, and their complexes with intrinsic point defects are investigated in 4H-SiC by first-principles theory. The solubility and electrical activation of the dopants in thermodynamic equilibrium are calculated. For nitrogen, a saturation of the electrical activation above a certain critical concentration is found that is driven by a preferential incorporation of nitrogen into electrically passive nitrogen-vacancy complexes. This explains the observations of recent experiments. An almost complete phosphorus activation is found up to the solubility limit. We suggest that the low phosphorus doping achieved by sublimation growth is related to the growth kinetics.

A phase diagram for the localization-delocalization transition of a two-dimensional disordered semiconducting system in a perpendicular magnetic field B is investigated with a numerical method. Disorder originates from a random distribution of shallow impurities, measured in units of the impurity concentration c. Starting with a tight-binding Hamiltonian and an impurity state basis, the localization criterion is defined by means of the quantum connectivity of impurities. Finite-size scaling is employed to study the transition in the B-c parameter space. On this footing a phase diagram of the localization-delocalization transition in the B-c parameter space is calculated. At low concentrations c