1. Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces.
- Author
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Phillips, L. C., Lombardo, A., Ghidini, M., Yan, W., Kar-Narayan, S., Hämäläinen, S. J., Barbone, M., Milana, S., van Dijken, S., Ferrari, A. C., and Mathur, N. D.
- Subjects
FERROMAGNETIC materials ,GRAPHENE ,MAGNETORESISTANCE ,KERR electro-optical effect ,MAGNETIC tunnelling - Abstract
Using ferromagnetic La
0.67 Sr0.33 MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ~32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67 Sr0.33 MnO3 -graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications. [ABSTRACT FROM AUTHOR]- Published
- 2016
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