Back to Search Start Over

Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces.

Authors :
Phillips, L. C.
Lombardo, A.
Ghidini, M.
Yan, W.
Kar-Narayan, S.
Hämäläinen, S. J.
Barbone, M.
Milana, S.
van Dijken, S.
Ferrari, A. C.
Mathur, N. D.
Source :
Applied Physics Letters; 3/14/2016, Vol. 108 Issue 11, p1-5, 5p, 3 Graphs
Publication Year :
2016

Abstract

Using ferromagnetic La<subscript>0.67</subscript>Sr<subscript>0.33</subscript>MnO<subscript>3</subscript> electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ~32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La<subscript>0.67</subscript>Sr<subscript>0.33</subscript>MnO<subscript>3</subscript>-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
108
Issue :
11
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
113884178
Full Text :
https://doi.org/10.1063/1.4942778