172 results on '"Hobart, Karl D."'
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2. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates
3. Detecting defects that reduce breakdown voltage using machine learning and optical profilometry
4. Using machine learning with optical profilometry for GaN wafer screening
5. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
6. Process Optimization for Selective Area Doping of GaN by Ion Implantation
7. Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
8. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.
9. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.
10. Experimental observation of localized interfacial phonon modes
11. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
12. Optical characterization and thermal properties of CVD diamond films for integration with power electronics
13. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
14. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
15. Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
16. Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation.
17. Electrothermal Performance of AlGaN/GaN Lateral Transistors with >10 μm Thick GaN Buffer on 200 mm Diameter‐Engineered Substrates.
18. Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
19. Thermal etching of nanocrystalline diamond films
20. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices.
21. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
22. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing
23. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
24. A Simple Edge Termination Design for Vertical GaN P-N Diodes.
25. Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers
26. Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN x Layers
27. Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
28. Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes
29. Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination.
30. Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers
31. Wafer-bonded silicon gamma-ray detectors
32. Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy
33. Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes
34. Ultrathin strained-SOI by stress balance on complaint substrates and FET performance
35. Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond.
36. Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation
37. A 230-watt S-band SiGe heterojunction bipolar transistor
38. Dry Techniques for Epitaxial Graphene Transfer
39. Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy.
40. Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes
41. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging
42. Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy
43. Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC
44. Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications.
45. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties.
46. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates.
47. Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers.
48. High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates.
49. A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes.
50. Structural transition and recovery of Ge implanted β-Ga2O3.
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