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Studies the electron transport in silicon carbide using full band Monte Carlo simulation model. Application of silicon carbide as a semiconductor material; Important parts of a Monte Carlo model; Results of the study.

We address the question of robustness of damaged microstrip antennas, the damage being either penetrating, caused by fragment impact, or floating, caused by manufacturing imperfections. A simple analytic expression is derived to facilitate the prediction of robustness. To verify this expression a Monte Carlo method, based on a general 3D electromagnetic solver, is used to evaluate the robustness of the antennas. The simulations are verified by measurements and supplementary simulations in an alter- native electromagnetic solver, using the finite difference time do- main method (FDTD). The agreement between the simulated results and the analytic expression is found to be good in a qualitative comparison. [ABSTRACT FROM AUTHOR]

A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells. [ABSTRACT FROM AUTHOR]