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Full band Monte Carlo simulation of electron transport in 6H-SiC.

Authors :
Nilsson, Hans-Erik
Hjelm, Mats
Source :
Journal of Applied Physics. 7/15/1999, Vol. 86 Issue 2, p965. 9p. 3 Charts, 14 Graphs.
Publication Year :
1999

Abstract

Studies the electron transport in silicon carbide using full band Monte Carlo simulation model. Application of silicon carbide as a semiconductor material; Important parts of a Monte Carlo model; Results of the study.

Subjects

Subjects :
*ELECTRIC properties
*SILICON carbide
*MONTE Carlo method
*SEMICONDUCTORS

Details

Language :
English
ISSN :
00218979
Volume :
86
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
2056773
Full Text :
https://doi.org/10.1063/1.370833
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