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3. Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage.

Author

Sciuto, A., Mazzillo, M., Lenzi, P., Di Franco, S., Mello, D., Barbarino, P. P., Longo, G., Cascino, S., Santangelo, A., Albergo, S., Tricomi, A., Starodubtsev, O., Adriani, O., and D'Arrigo, G.

Abstract

We report on the structure and performance of 4H-SiC p+-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm2 at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105 was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from 0.06 A/W (QE = 29%) at 0-V bias to 0.10 A/W (QE of about 45%) at 30-V reverse bias. [ABSTRACT FROM PUBLISHER]

Published
2017
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