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Sol-gel-derived ([Ba.sub.0.65], [Sr.sub.0.35])Ti[O.sub.3] (BST) films are etched in C[F.sub.4]/Ar and C[F.sub.4]/Ar/[O.sub.2] plasmas by using magnetically enhanced reaction ion etching technology (MERIE) technology. The results have indicated that there are no significant differences between the unetched BST film and the postannealed after etched film with respect to the fitted formulas and average valences of Ti cations.

Barium strontium titanate (Ba1− xSr x)TiO3 (BST) thin films were deposited on Pt, Ru, RuO2, and Pt/RuO2 electrodes by radio frequency magnetron sputtering. The interfacial structure characteristic of the BST films deposited on various electrodes was investigated. X-ray photoelectron spectroscopy investigations showed that the interfacial diffusion layer in BST/Pt and BST/Ru are approximately 6 and 10 nm, respectively. The BST films are short of Ba and O elements comparing with the stoichiometry Ba0.65Sr0.35TiO3 in the interface region. Dielectric measurement of the BST films with thickness ranging from 70 to 400 nm revealed that the BST films deposited on Pt and Pt/RuO2 bottom electrodes have similar dielectric property, the BST films deposited on Ru have the highest bulk dielectric constant, and the thickness dependence of dielectric constant on the BST film deposited on RuO2 electrode can be neglected. The interfacial layer dielectric constant of BST films deposited on Pt and Ru electrodes are estimated to be about 34.5 and 157.1, respectively. The effect of interfacial dead-layer on the dielectric constant could be eliminated through selecting appropriate bottom electrodes. [ABSTRACT FROM AUTHOR]

The influence of lattice strain on the strength of dipoles in the Ho3+-doped barium-strontium titanate (BST) thin films has been analyzed. Thin films were produced by using the sol–gel technique on Si substrate. The resulting stress due to fabrication process was quantified by analyzing the {200} planes of the cubic perovskite structure and comparing them with the data for bulk materials. The influence of strain and changes due to Ho3+-ion doping were characterized by Raman and visible photoluminescence spectroscopy, which clearly show the evidence for the increased tetragonality due to weaker dipole interaction at B-sites of cubic perovskite in the presence of Ho3+-ions at concentrations larger than 3 mol%. The film strain can therefore be controlled to enhance the intensity of emitted light at 650 nm. [ABSTRACT FROM AUTHOR]