1. High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection.
- Author
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Han, Zuyin, Song, Shuang, Liang, Huili, Shao, Hang, Hu, Sigui, Wang, Yan, Wang, Jiwei, and Mei, Zengxia
- Subjects
THIN film transistors ,INDUSTRIAL capacity ,INDIUM gallium zinc oxide ,PHOTOCONDUCTIVITY ,TRANSISTORS - Abstract
Owing to the intrinsically wide bandgap and high uniformity, amorphous Ga
2 O3 (a-Ga2 O3 ) has been illustrating a great industrial potential for large-area deep ultraviolet (UV) photosensor arrays. However, a seemingly irreconcilable contradiction between high responsivity and long persistent photoconductivity has hampered the growing pace of such devices. In this work, three-terminal InGaZnO (IGZO)/a-Ga2 O3 dual-active-layer (DAL) transistors were developed to realize the ability of a-Ga2 O3 as the active layer both in switching and sensing. Benefitting from the introduction of ultrathin IGZO electron reservoir and defect control of a-Ga2 O3 , the DAL device demonstrates more stable and superior gate-control capability with promising performance including high on/off ratio and field-effect mobility of ∼108 and 8.3 cm2 /V⋅s, respectively, as well as a small sub-threshold swing (SS) of 0.36 V/dec. Under 254 nm UV illumination, the DAL device manifests a light-to-dark ratio of ∼108 , a responsivity of 4.8 × 103 A W−1 , a detectivity of 8 × 1015 Jones, and a UV/visible rejection ratio (R254 /R400 ) of 64. The simultaneous achievement of deep UV photo-detection and transistor's switching performance in a-Ga2 O3 material offers excellent potential for the construction of large-area active-matrix UV photosensor arrays with the simple and low-cost fabrication process. [ABSTRACT FROM AUTHOR]- Published
- 2022
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