Dual-active-layer InGaZnO high-voltage thin-film transistors.

InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 ± 17 V while the ON/OFF ratio reaches 109 at. [ABSTRACT FROM AUTHOR]