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We demonstrate a compact and low-loss 1 × 2 power splitter that efficiently splits and couples light from one strip to two slot waveguides. The splitter is optimized over a broad wavelength span ranging from 1.3 to 1.7 ${\mu }$m through finite difference time domain simulations. The splitter junction footprint is only 2.00 × 1.61 ${\mu }$m. The structure does not require an adiabatic transition region and is compatible with standard commercial silicon photonic fabrication processes. Experimental results show an insertion loss of less than 0.7dB for the TE polarization.

This paper presents a new design for a 1 × 4 optical power splitter using multimode interference (MMI) coupler in silicon nitride (Si3N4) strip waveguide structures. The main functionality of the proposed design is to use Si3N4 for dealing with the back reflection (BR) effect that usually happens in silicon (Si) MMI devices due to the self-imaging effect and the higher index contrast between Si and silicon dioxide (SiO2). The optimal device parameters were determined through numerical optimizations using the beam propagation method (BPM) and finite difference time domain (FDTD). Results demonstrate that the power splitter with a length of 34.6 μm can reach equal distribution power in each output port up to 24.3% of the total power across the O-band spectrum with 0.13 dB insertion loss and good tolerance MMI coupler parameters with a shift of ±250 nm. Additionally, the back reflection range over the O-band was found to be 40.25–42.44 dB. This demonstrates the effectiveness of the incorporation using Si3N4 MMI and adiabatic input and output tapers in mitigating unwanted BR to ensure that a good signal is received from the laser. This design showcases the significant potential for data-center networks, offering a promising solution for efficient signal distribution and facilitating high-performance and reliable optical signal routing within the O-band range. By leveraging the advantages of Si3N4 and the MMI coupler, this design opens possibilities for advanced optical network architectures and enables efficient transmission of optical signals in the O-band range. [ABSTRACT FROM AUTHOR]

We propose and demonstrate a cost-effective liquid refractive index (RI) sensor in polymer materials by employing a Mach-Zehnder interferometer (MZI) formed with the conventional strip waveguide. The proposed sensor can attain high sensitivity by choosing a suitable reference arm length to reduce optical path difference (OPD) between the two arms of the employed MZI. Our fabricated devices, which have the same sensing arm length of 7900 μm but different reference arm lengths of 7900.0, 7942.5, 7950.9, 7962.2, and 7969.5 μm, respectively, exhibit the maximum RI sensitivities of 33662.8 nm/RIU, and almost the same detection range (DR) of 0.0041 ± 0.0002 RIU.

We propose and demonstrate a cost-effective liquid refractive index (RI) sensor in polymer materials by employing a Mach-Zehnder interferometer (MZI) formed with the conventional strip waveguide. The proposed sensor can attain high sensitivity by choosing a suitable reference arm length to reduce optical path difference (OPD) between the two arms of the employed MZI. Our fabricated devices, which have the same sensing arm length of 7900 µm but different reference arm lengths of 7900.0, 7942.5, 7950.9, 7962.2, and 7969.5 µm, respectively, exhibit the maximum RI sensitivities of 33662.8 nm/RIU, and almost the same detection range (DR) of 0.0041 ± 0.0002 RIU. [ABSTRACT FROM AUTHOR]

Two‐dimensional (2D) metasurface integrated with strip waveguide in silicon‐on‐insulator (SOI) has been designed to achieve high coupling efficiency for 3.8 μm wavelength. The optimisation in period and radius has been achieved using 3D finite‐difference time‐domain (FDTD). The calculated coupling efficiency in the in‐plane waveguide for the out‐of‐plane surface illumination is over 90% with a bandwidth of 1 μm. The design is consistent with the available lithography using 400 nm thick SOI for mid‐IR applications. Finally, monolithic integration can be achieved using standard multi‐project wafer run. [ABSTRACT FROM AUTHOR]

We present a detailed study of Si-based optical waveguides, which can be used as evanescent field sensors for the quantitative analysis of various gases and liquids. Direct quantitative comparison of simulation with experimental results of directional coupling structures allows fine-tuning the material parameters and provides important input for future sensor design.